International Journals (2006 – till date):
1) Yusuke Kobayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai, "Analysis of Threshold Voltage Variation in Fin Field Effect Transistors (FinFETs) Separating Role of Short Channel Effects", Accepted, Japanese Journal of Applied Physics, 2010.
2) Manoj Joshi, Prasanna Gandhi, V.Ramgopal Rao, Soumyo Mukherji, "Design of Ultra Thin Affinity Cantilevers for Detection of Proteins", To appear in International Journal of Micro and Nano Systems, 2010.
3) Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui and Hiroshi Iwai, "Analysis of dependence of short-channel effects in double- gate MOSFETs on channel thickness", Accepted, Microelectronics Reliability (Elsevier), 2010.
4) S. Chabukswar, D. Maji, C.R. Manoj, K.G. Anil, V. Ramgopal Rao, F. Crupi, P.
Magnone, G. Giusi, C.Pace, N. Collaert, "Implications of Fin Width Scaling on Variability and Reliability of High-k Metal Gate FinFETs", Accepted for publication, Microelectronic Engineering (Elsevier).
5) M. A. Khaderbad, Urmimala Roy, M. Yedukondalu, M. Rajesh, M. Ravikanth, and V.
Ramgopal Rao, "Variable Interface Dipoles of Metallated Porphyrin Self-assembled Monolayers for Metal Gate Work Function Tuning in Advanced CMOS technologies", Accepted, IEEE Transactions on Nanotechnology, 2010
6) C. R. Manoj, Angada B. Sachid, Feng Yuan, Chang-Yun Chang, and V. Ramgopal Rao,
"Impact of Fringe Capacitance on the Performance of Nanoscale FinFETs", IEEE Electron Device Letters, Vol. 31, Jan. 2010 Page(s): 83 – 85.
7) Mayank Shrivastava, M.S.Baghini, Harald Gossner, V. Ramgopal Rao, "Mixed Signal Performance of Various High Voltage Drain Extended MOS Devices: PART 1", IEEE Transactions on Electron Devices, Vol. 57, February 2010, Pages: 448-457.
8) Mayank Shrivastava, M.S.Baghini, Harald Gossner, V. Ramgopal Rao, "A Novel Scheme to Optimize the Mixed Signal Performance and Hot Carrier Reliability of Drain Extended MOS Devices: PART 2", IEEE Transactions on Electron Devices, Vol. 57, February 2010, Pages: 458-465.
9) Kobayashi, Y., Sachid, A.B., Tsutsui, K., Kakushima, K., Ahmei, P., V. Ramgopal Rao, Iwai, H., "Analysis of threshold voltage variations of FinFETs relating to short channel effects", Electro-Chemical-Society (ECS) Transactions, Volume 16, Issue 40, 2009, Pages 23-27.
10) Seena.V, Anukool Rajorya, Prita Pant, Soumyo Mukherji, V.Ramgopal Rao, "Polymer microcantilever biochemical sensors with integrated polymer composites for electrical
detection", Solid State Sciences (Elsevier), Volume 11, Issue 9, September 2009, Pages 1606-1611
11) V. Hariharan, R. Thakker, K. Singh, A. B. Sachid, M. B. Patil, J. Vasi and V. Ramgopal Rao, “Drain Current Model for Nanoscale Double-Gate MOSFETs”, Solid State Electronics (Elsevier), volume 53, issue 9, year 2009, pp. 1001 - 1008
12) Harshil N. Raval, S.P. Tiwari, Ramesh R.N., S.G. Mhaisalkar, and V. Ramgopal Rao,
"Solution Processed Bootstrapped Organic Inverters based on P3HT with a High-K Gate dielectric Material", Volume 30, Issue 5, Pages:484 - 486, IEEE Electron Device Letters, May 2009
13) Mrinalini G. Walawalkar, Anil Kottantharayil, V. Ramgopal Rao, “Chemical Vapor Deposition Precursors for High Dielectric Oxides: Zirconium and Hafnium Oxide”, Journal of Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry (SRMN),Taylor & Francis Group, 39:6, pages: 331 – 340, 2009
14) R. A. Thakker, C. Sathe, A. B. Sachid, M. S. Baghini, V. Ramgopal Rao, M. B. Patil, "A Novel Table-Based Approach for Design of FinFET Circuits", Pages: 1061-1070, IEEE Transactions on CAD, July 2009
15) Seena.V, Nitin Kale, Sudip Nag, Manoj Joshi, Soumyo Mukherji, V.Ramgopal Rao,
“Developing a polymeric microcantilever platform technology for biosensing applications”, International Journal of Micro and Nano Systems, 1(1), 2009, pp.65-70 (Invited paper)
16) Harshil N. Raval, Shree Prakash Tiwari, Ramesh R. N., and V. Ramgopal Rao,
"Determining Ionizing Radiation using Sensors Based on Organic Semiconducting Material", Applied Physics Letters 94, 123304, 2009
17) D. Maji, F. Crupi, E. Amat, E. Simoen, B. De Jaeger, D.P. Brunco, C.R. Manoj, V.
Ramgopal Rao, P. Magnone, G. Giusi, C. Pace, L. Pantisano, J. Mitard, R. Rodriguez, M.
Nafrìa, "Understanding and Optimization of Hot Carrier Reliability in Germanium-on- Silicon pMOSFETs", IEEE Transactions on Electron Devices, VOL. 56, NO. 5, MAY 2009 pp. 1063-1069
18) Nitin S. Kale, Manoj Joshi, Nageswararao P, S. Mukherji, V. Ramgopal Rao, “Bio- functionalization of Silicon Nitride based Piezoresistive Microcantilevers”, Sadhana, Indian Academy of Science Proceedings in Engineering Sciences, Vol. 34, Part 4, August 2009
19) Pradeep Kumar Chawda, Bulusu Anand, and V. Ramgopal Rao, “Optimum Body Bias Constraints for Leakage Reduction in High–K CMOS Circuits”, Japanese Journal of Applied Physics, 48 (2009) 054501, May 2009
20) Ravishankar S.Dudhe, S.P. Tiwari, Harshil N. Raval, Mrunal A. Khaderbad, Jasmine Sinha, M. Yedukondalu, M. Ravikanth, Anil Kumar, V.Ramgopal Rao, "Explosive vapour sensor using poly (3-hexylthiophene) and Cu-tetraphenyl-porphyrin composite based organic field effect transistors", Applied Physics Letters, Vol. 93, 263306 (2008);
Published 31 December 2008 (For a NATURE India
21) P. Magnone, F. Crupi, G. Giusi, C. Pace, E. Simoen, C. Claeys, L. Pantisano, D. Maji, V.
Ramgopal Rao, P. Srinivasan, "1/f noise in drain and gate current of MOSFETs with high-k gate stacks" IEEE Transactions on Device and Materials Reliability (TDMR),vol.9, no.2, pp.180-189, June 2009(Invited)
22) Venkatnarayan Hariharan, Juzer Vasi and V. Ramgopal Rao, "A CAD-Compatible Closed-form Approximation for the Inversion Charge Areal Density in Double-Gate MOSFETs", Solid State Electronics (Elsevier), Vol 53, issue 2, pp. 218-224, Feb 2009
23) Venkatnarayan Hariharan, Juzer Vasi and V. Ramgopal Rao, "An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs", IEEE Transactions on Electron Devices, Vol. 56, No.3, pp. 529-532, March 2009 .
24) Nitin S. Kale, Sudip Nag, R. Pinto, V. Ramgopal Rao, "Fabrication and Characterization of a Polymeric Microcantilever with an Encapsulated Hotwire CVD Polysilicon Piezoresistor", (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), Volume 18, Issue 1, Feb. 2009 Page(s):79 - 87
25) Venkatnarayan Hariharan, Juzer Vasi, V. Ramgopal Rao,"Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs", IEEE Transactions on Electron Devices, Volume 55, Issue 8, Page(s):2173 - 2180, Aug. 2008
26) Debabrata Maji, Felice Crupi, Gino Giusi, Calogero Pace, Eddy Simoen, Cor Claeys, V.
Ramgopal Rao,"DC and Noise Properties of the Gate Current in Epitaxial Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with TiN/TaN/HfO2/SiO2 Gate Stack", Applied Physics Letters, 92, 163508, April 2008
27) Mayank Shrivastava, Maryam Shojaei Baghini,A.Sachid, Dinesh Kumar Sharma,V.
Ramgopal Rao, "A Novel and Robust Approach for Common Mode FeedBack using IDDG FinFET", IEEE Transactions on Electron Devices 55 (11), pp. 3274-3282, 2008
28) S.P. Tiwari, Srinivas P, Shriram S, Nitin S. Kale, Subodh G Mhaisalkar, V. Ramgopal Rao, "Organic FETs with Hot-wire CVD (HWCVD) Silicon Nitride as a Passivation and Gate Dielectric Layer", Volume 516, Issue 5, Pages 770-772, Thin Solid Films, January 2008
29) Mrunal A. Khaderbad, S. Mukherji and V. Ramgopal Rao, "DNA Based Nanoelectronics", Recent Patents on Electrical Engineering, Volume 1, Number 2, June
2008, pp. 115-120 (Bentham Sciece Publishers) (Invited review article)(ISSN: 1874-4761 - Volume 1, 2008)
30) C.R.Manoj, Meenakshi N, Dhanya V. and V. Ramgopal Rao, "Device Design &
Optimization Considerations for Bulk FinFETs", IEEE Transactions on Electron Devices, Vol. 55, No.2, p. 609-615, February 2008
31) Angada B. Sachid, Manoj C. R., Dinesh K. Sharma, V. Ramgopal Rao, "Gate Fringe Induced Barrier Lowering in Underlap FinFET Structures and its Optimization", IEEE Electron Device Letters, Vol. 29, Issue 1, pp.128-130, January 2008
32) T. Cahyadi, H. S. Tan, S. G. Mhaisalkar, P. S. Lee, F. Boey, Z.K. Chen, C. M. Ng, V.
Ramgopal Rao, G. J. Qi, "Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors", Applied Physics Letters (published by the American Institute of Physics), vol. 91, 242107, 2007
33) S.R. Rajwade, P.D. Kulkarni, S. Mukherji, K.K. Rao, V. Ramgopal Rao,
"Polymerization on DNA Templates for Nanoelectronics Applications", Journal of Scanning Probe Microscopy, Volume 2, No.1, June, 2007 , pp. 32-35(4), American Scientific Publishers
34) S.P. Tiwari, E. B. Namdas, V. Ramgopal Rao, and S.G. Mhaisalkar "Solution processed n-type Organic Field Effect Transistors with high ON/OFF current ratios based on fullerene derivatives" IEEE Electron Device Letters, Vol. 28, Issue: 10, p. 880, 2007 .
35) Debabrata Maji, S. P Duttagupta, V. Ramgopal Rao, Chia Ching Yeo, and Byung-Jin Cho, "Border Trap Characterization in High-k strained-Si MOSFETs", IEEE Electron Device Letters, Vol. 28, p. 731, Issue:8, August 2007
36) Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai, "Parasitic effects in multi-gate MOSFETs", IEICE Transactions on Electronics (Japan), Vol. E90- C, No.10, pp 2051-2056, October 2007
37) C.R.Manoj, V. Ramgopal Rao, "Impact of High K Gate Dielectrics on the Device and Circuit Performance of Nanoscale FinFETs", IEEE Electron Device Letters, Vol. 28, Issue: 4, p.295, April 2007
38) Manoj Joshi, Nitin Kale,S.Mukherji, R.Lal, V.Ramgopal Rao, “Affinity Cantilever Sensors for Cardiac Diagnostics”, Indian Journal of Pure & Applied Physics, Vol 45, pp.
287-293, April 2007
39) Manoj Joshi, Nitin Kale, Rakesh Lal, V. Ramgopal Rao, Soumyo Mukherji, “A Novel Dry Method for Surface Modification of SU-8 for Immobilization of Biomolecules in Bio-MEMS” Biosensors and Bioelectronics, vol. 22, no.11,pp. 2429-2435, May 2007
40) T. Cahyadia, J. N. Tey, S. G. Mhaisalkar,V. Ramgopal Rao, R. Lal, Z. H. Huang and G.
J. Qi, "Investigations of enhanced device characteristics in pentacene-based field-effect transistors with sol-gel interfacial layer", Applied Physics Letters, 90(11): 056711, 2007
41) S.Chakraborty, A.Mallik, C.K.Sarkar and V. Ramgopal Rao, “Impact of Halo Doping on the Subthreshold Performance of Deep Submicrometer CMOS Devices and Circuits for Ultra Low Power Analog/Mixed-Signal Applications,” IEEE Transactions on Electron Devices,Vol. 54, pages 241-248, February 2007
42) Manoj Joshi, Richard Pinto, V. Ramgopal Rao, Soumyo Mukherji, "Silanization and Antibody Immobilization on SU-8", Applied Surface Science, Vol.253,No.6, pp.3127- 3132, January, 2007
43) K. Narasimhulu, I.Venkata Suryam Setty, V. Ramgopal Rao, "The Effect of Single Halo Doping on the Low-Frequency Noise Performance of Deep Sub-micron MOSFETs", IEEE Electron Device Letters,Volume 27,Issue 12, Pages:995-997,December 2006
44) Nitin S. Kale, V. Ramgopal Rao, "Design and Fabrication Issues in Affinity Cantilevers for bio-MEMS applications", (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS),Volume 15, Issue 6, Pages:1789 - 1794, December 2006
45) Nitin Kale, Ashwani Mehta, Manoj Joshi, Soumyo Mukherjee, Rakesh Lal, R. Pinto, P.
R. Apte, V. Ramgopal Rao, "Affinity cantilever and EIS based biosensors for Cardiac Diagnostics", ISRAPS (Indian Society for Radiation and Photochemical Sciences) Bulletin, Vol. 18, p. 24-29, October 2006 (Invited)
46) Naik A. H. Thakkar N. V., Palkar V. R., Dharwadkar S.R, “Fixation of some major fission products in NaZr2P 3O12 ceramic employing microwave heating”, Radiochimica Acta 94 (6-7), pp. 335-338 (2006)
47) Palkar V. R and S. K. Malik, “Observation of magnetoelectric behavior at room temperature in Pb(Fe xTi1-x)O3”, Solid State Communications 134 (11), pp. 783-786, 2006
48) Palkar V. R. Anisha, R., Pinto, R., Bhattacharya, S., “Multiferroic properties of Dy modified BiFeO3 thin films in comparison with Tb modified BiFeO3 thin films”, Journal of Materials Research (Special issue on multiferroics) 22 (8), 2068 (2007)
49) Petrov, P.Kr., Palkar, V.R. Tagantsev, A.K. Chien, H.-I., Prashanthi, K., Axelsson, A.-K., Bhattacharya, S., Alford, N.M., “Dielectric properties characterization of La- and Dy- doped BiFeO3 thin films”, Journal of Materials Research (Special issue on multiferroics), 22 (8), 2179 (2007)
50) Palkar, V.R., Purandare, S.C., Gohil, S., John, J., Bhattacharya, S., “Scanning probe imaging of coexistent ferromagnetism and ferroelectricity at room temperature”, Applied Physics Letters, 90, 172901 (2007)
51) V. R. Palkar, Prashanthi K and S P Dattagupta, “Influence of process-induced stress on multiferroic properties of pulse laser deposited Bi0.7Dy0.3FeO3 thin films”, J. Phys. D:
Appl. Phys. 41, 045003 (2008)
52) Palkar, V.R., Prashanthi, K, “Observation of magnetoelectric coupling in Bi0.7Dy 0.3FeO3 thin films at room temperature”, Applied Physics Letters 93 (13), 132906 (2008)
53) Prashanthi, K., Duttagupta, S.P., Pinto, R., Palkar, V.R. “Multiferroic Bi0.7Dy0.3FeO films as high k dielectric material for advanced non-volatile memory devices”, Electronics Letters 45 (16), pp. 821-822, 2009
54) Prashanthi, K., Chalke, B.A., Barick, K.C., Das, A., Dhiman, I. and Palkar, V.R.,
“Enhancement in multiferroic properties of Bi0.7 - x Lax Dy0.3 FeO3 system with removal of La”, Solid State Communications, 149, 188 (2009)
55) M. Shrivastava, M. Shojaei Baghini, D. K. Sharma, V. Ramgopal Rao, “A Novel Bottom Spacer FinFET Structure For Improved Short Channel, Power-Delay & Thermal Performance”, Accepted for publication in IEEE Transactions on Electron Devices, 2010.
56) R. A. Thakker, C. Sathe, M. Shojaei Baghini, M. B. Patil,
“A Table-Based Approach to Study the Impact of Process Variations on FinFET Circuit Performance”, Accepted for publication in IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems, 2010.
57) R. A. Thakker, M. Shojaei Baghini, M. B. Patil, “Automatic Design of Low-Power Low- Voltage Analog Circuits using PSO with Re-initialization”, Journal of Low-Power Electronics, Oct. 2009 - Special Issue on International VLSI Design Conference 2009.
58) N. V. Karanjkar, R. R. Sahoo and M. Shojaei Baghini, “Comments on “Improved Accuracy Pseudo-Exponential Function Generator with Applications in Analog Signal Processing”", accepted for publication in IEEE Transactions on VLSI, 2009.
59) M. Shojaei Baghini, S. Nag, R. K. Lal and D. K. Sharma, “An Ultra Low-Power Current- Mode Integrated CMOS Instrumentation Amplifier for Personal ECG Recorders”, WS J.
of Circuits, Systems, and Computers, Dec. 2008.
60) R. R. Navan, K. Prashanthi, A. Rajoriya, M. Shojaei Baghini, V. R. Palkar, V. R. Rao, “A Novel High-K (K > 40) Gate Dielectric for Pentacene Organic Thin Film Transistors”, Proc. of ICCE-17 2009, USA.
61) C. Sandhya, A. B. Oak, N. Chattar, A. S. Joshi, U. Ganguly, C. Olsen, S. M. Seutter, L.
Date, R. Hung, J. Vasi and S. Mahapatra, “Impact of SiN composition variation on
SANOS memory performance and reliability under NAND (FN/FN) operation”, IEEE Trans. Electron Devices, v.56, p.3123, 2009.
62) P. K. Singh, R. Hofmann, G. Bisht, K. K. Singh, N. Krishna and S. Mahapatra,
“Performance and reliability of Au and Pt single layer metal nanocrystal flash memory under NAND (FN/FN) operation”, IEEE Trans. Electron Devices, v.56, p.2065, 2009.
63) A. Datta, R. Asnani and S. Mahapatra, “A novel gate assisted reverse read scheme to control bit coupling and read disturb for multibit/cell operation in deeply scaled split-gate SONOS flash EEPROM cells”, IEEE Electron Dev. Lett., v.30, p.885, 2009.
64) S. Deora, A. E. Islam, M. A. Alam and S. Mahapatra, “A common framework of NBTI generation and recovery in plasma nitrided SiON p-MOSFETs”, IEEE Electron Dev.
Lett., v.30, p.978, 2009.
65) S. Mahapatra, V. D. Maheta, A. E. Islam and M. Alam, “Isolation of NBTI stress generated interface trap and hole trapping components in PNO p-MOSFETs”, IEEE Trans. Electron Devices, v.56, p.236, 2009.
66) S. Deora, V. D. Maheta, G. Bersuker, C. Olsen, K. Ahmed, R. Jammy and S. Mahapatra,
“A comparative NBTI study of HfO2, HfSiOX and SiON p-MOSFETs using UF-OTF IDLIN technique”, IEEE Electron Dev. Lett., v.30, p.152, 2009.
67) C. Sandhya, U. Ganguly, N. Chattar, C. Olsen, S. M. Seutter, L. Date, R. Hung, J. Vasi and S. Mahapatra, “Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler-Nordheim tunneling program/erase operation”, IEEE Electron Dev.
Lett., v.30, p.171, 2009.
68) P. K. Singh, G. Bisht, R. Hofmann, K. Singh, N. Krishna, and S. Mahapatra, “Metal nanocrystal memory with Pt single and dual layer NC with low leakage Al2O3 blocking dielectric”, IEEE Electron Dev. Lett., v.29, p.1389, 2008.
69) V. D. Maheta, E. N. Kumar, S. Purawat, C. Olsen, K. Ahmed and S. Mahapatra,
“Development of an ultra-fast on-the-fly IDLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs”, IEEE Trans. Electron Devices, v.55, p.2614, 2008.
70) V. D. Maheta, C. Olsen, K. Ahmed and S. Mahapatra, “The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative bias temperature instability in p-MOSFETs: A study by ultra-fast on-the-fly IDLIN technique”, IEEE Trans. Electron Devices, v.55, p.1630, 2008.
71) A. E. Islam, G. Gupta, K. Z. Ahmed, S. Mahapatra and M. A. Alam, “Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models”, IEEE Trans. Electron Devices, v.55, p.1143, 2008.
72) S. Mahapatra and M. A. Alam, “Defect generation in p-MOSFETs under negative bias stress: An experimental perspective”, IEEE Trans. Materials and Dev. Reliability, v.8, p.35, 2008.
73) P. Bharath Kumar, R. Sharma, P. R. Nair and S. Mahapatra, “Investigation of drain disturb in SONOS Flash EEPROMs”, IEEE Trans. Electron Devices, v.54, p.98, 2007.
74) A. Datta, P. Bharath Kumar and S. Mahapatra, “Dual-bit/Cell SONOS Flash EEPROMs:
Impact of Channel Engineering on Programming Speed and Bit Coupling Effect”, IEEE Electron Dev. Lett., p.446, v.28, 2007
75) D. Varghese, G. Gupta, L. Madhav, D. Saha, K. Ahmed, F. Nouri and S. Mahapatra,
“Physical Mechanism and Gate Insulator Material Dependence of Generation and Recovery of Negative Bias Temperature Instability in p-MOSFETs”, IEEE Trans.
Electron Devices, p.1672, v.54, July 2007.
76) A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra and M. A. Alam, “Recent issues in negative bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects and relaxation”, IEEE Trans. Electron Devices, p.2143, v.54, September, 2007.
77) M. A. Alam, H. Kufluoglu, D. Varghese and S. Mahapatra, “A Comprehensive Model of PMOS NBTI Degradation: Recent progress”, Microelectronics Reliability, accepted, in press.
78) P. Bharath Kumar, D. Nair and S. Mahapatra, “Using Soft Secondary Electron Programming to reduce Drain Disturb in Floating Gate NOR Flash EEPROMs”, IEEE Trans. Device and Materials Reliability, v.6, p.81, 2006.
79) P. Bharath Kumar, P. R. Nair, R. Sharma, S. Kamohara and S. Mahapatra, “Lateral profiling of trapped charge in SONOS Flash EEPROMs programmed using channel hot electron injection”, IEEE Trans. Electron Devices, v.53, p.698, 2006.
80) D. Saha, D. Varghese and S. Mahapatra, “On the Generation and Recovery of Hot Carrier Induced Interface Traps: A critical examination of the 2D Reaction Diffusion model”, IEEE Electron Devices Lett., v.27, p.188, 2006.
81) D. Saha, D. Varghese and S. Mahapatra, “The role of Anode Hole Injection and Valence Band Hole Tunneling on interface trap generation during hot carrier injection stress”, IEEE Electron Devices Lett., p.585, 2006.
82) S. Mahapatra, D. Saha, D. Varghese and P. Bharath Kumar, “On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN and HCI stress”, IEEE Trans. Electron Devices, p.1583, 2006.
83) Deepu A., V.V.R. Sai and S. Mukherji, “Simple Surface Modification Techniques For Immobilization Of Biomolecules On Su-8", International Union Of Materials Research Societies International Conference On Advanced Materials (IUMRS-ICAM 2007) Bangalore, India - October 8-13, 2007.
84) Nagare Gajanan D and Soumyo Mukherji, “Regeneration Of Bio-Functionalized SOG Surface”, International Union Of Materials Research Societies International Conference On Advanced Materials (IUMRS-ICAM 2007) Bangalore, India - October 8-13, 2007.
85) Jyoti Gulia, V.V.R. Sai, and S. Mukherji, "Development of a Protocol for Direct Method of Quantification of Active Binding Sites on an Immunobiosensor", NanoTX-07, Dallas Texas, USA. October 2-4, 2007
86) V R Sai Vemulakonda, Kamini Thakare, Chitra Deshmukh, Tapanendu Kundu, Susan Titus, Pradeep Kumar and Soumyo Mukherji, “Evanescent wave absorbance based U- bent fiber-optic sensor for pathogen detection”, at the 9th Workshop on (Bio)sensors and bioanalytical techniques in environmental and clinical analysis held in University of Montreal, Canada, June 14-17, 2009.
