Physics and Astronomy Publications
Physics and Astronomy
5-1973
Absorptivity of Single-Crystal Yttrium at 4.2 K
J. H. Weaver
Iowa State University
David W. Lynch
Iowa State University
, [email protected]
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Absorptivity of Single-Crystal Yttrium at 4.2 K
Abstract
Measurements of the absorptivity of single crystals of Y were made between 0.15 and 4.4 eV at 4.2 K.
Polarized radiation was used with the electric vector parallel or perpendicular to the c^ axis of the crystal. The
observed structures in the absorptivity were interpreted on the basis of band calculations for Sc, Re, and Gd
and qualitative agreement was found between the band structures and the observed spectra.
Keywords
Polarized radiation, electric vector, Ames Laboratory
Disciplines
Atomic, Molecular and Optical Physics | Condensed Matter Physics | Physics
Comments
This article is from
Physical Review B
7 (1973): 4737, doi:
10.1103/PhysRevB.7.4737
. Posted with permission.
I'8
YSIGAL RE VIEW B VOLUME7,
NUMBER10
15
MAY1973
Absorptivity
of
Single-Crystal
Yttrium
at
4.
2
K
J.
H. Weaver and D. W. LynchAmes Laboratory-USAEC and Department ofPhysics, love State University, Ames, Iowa 50010 (Received 5 January 1973}
Measurements ofthe absorptivity of single crystals ofY were made between 0.15 and 4.4 eV at 4.2
n
K.Polarized radiation was used with the electric vector parallel or perpendicular to the c axis ofthe crystal. The observed structures in the absorptivity were interpreted on the basis ofband calculations for Sc, Re, and Gd and qualitative agreement was found between the band structures and the observed spectra.
In the present paper the absorption
spectra
of,single
crystals
of hcp yttriumare
discussed. Inearlier
papers, we have considered the optical properties of thebcc
transition metalsCr,
' Nb,Ta,
V, and Mo overa
wide energy range,typi-cally
0. 1-35
eV, as calculated from the measuredabsorptivity
or ref
lectivity.For
these metals, the oxide formed slowly and/or had known opticalprop-erties
and thedielectric
function could be deter-mined reliably in the vacuum ultraviolet.For
Y,however,
it
is
notclear
that the oxide forms slow-ly; since the oxidedielectric
functionis
not known, we have measured the absorptivity only below4.
4 eV, whereit
has been assumed that the oxideis
transparent;
i.
e.
,
the absorption coefficient ofthe oxideis
zero.
Since no vacuum-ultraviolet dataare
available,'
and since any extrapolation of the absorptivity to high energy appearsartificial,
wehave not calculated the
dielectric
function. Quali-tative information canbe obtained, nevertheless, from the absorptionspectra.
High-purity Y was obtained within the Ames
Laboratory and single
crystals
were grown bya
strain-anneal method. The samples used were spark cut from one oftwo single-crystal ingots (approximately
50x12
mm diameter) that had been oriented by Laue back-reflectionx-ray
diffraction.The
crystals
were polished mechanically andelec-tropolished in
a
solution of 6%perchloric acid in methanol (cooled bya
bath of dryice
and acetone).They were exposed to the atmosphere
for
only about3-5
min before being placed in the vacuumcham-ber,
which was flushed with high-purity N2as
it
was beingsealed.
Within about 15min the vacuumwas about 104
Torr.
The calorimeter was thencooled to
4.
2Kand the measurements performed.The absorption
spectra
shown inFig.
1wereob-tained inthis manner. Details ofthe method
are
given inRef.
1.
To determine the effect of anox-ide, one ofthe samples was run
as
outlined above, then stored in an atmosphere of high-purity oxygenat room temperature for 14days;
it
was then runa
secondtime.
The absorptivity below about 3 eV was practically identical; above 3 eV the effect ofthe oxide layer was to increase the magnitude of the absorptiviiy
A.
At4.
18eV, Arose
from0.
719
(0.
783) to0.
753(0.
826)for E
[~c
(E&c).
It
ap-pears,
then, that thespectra
below 3eVare
reli-able and that between 3and4.
4 eV, the oxide mightbe weakly affecting the absorptivity.
The anisotropy
is
quite pronounced below about1 eV; above
1.
5eV, both curves display the same structure, with maxima occurring aiabout1.
5and2.
1eV. Above about2.
6 eV, the absorptivitiesrise
smoothly to the limit of the data(4.
42eV).
At lowenergies, the absorptivities
rise
verydramatical-ly from
0.
0229 (Ellc)and0.
0430 (E&c)
at 0 15eV, indicating that interband transitionspersist
to verylow energy.
To account
for
the structure in thedielectric
function (and the ref lectivity) one usually comparesthe optical
spectra
with existing bandstructures.
While Louckss has considered theFermi-surface
topology ofY, there have been noband calculations Pe~se.
However,it
has been pointed outs that Yis
very similar in atomic configuration (4d5s )tothe hexagonal ra're-earth metals with atomic
con-figurations 5d6s
.
Further,augmented-plane-wave calculations have shown' that the band
densi-ty-of-states
curvesfor
Re,'
Gd, ~Y,8and Dy'0are
quite
similar.
On thebasis
ofthe rigid-bandmod-el,
one might further expect the bands ofYto bequite similar to those of
Sc.
'
Photoemission re-sults have shown that Yand Scpossess
similar optical densities ofstates.
The occupied portion ofthe dbandsis
approximately equalfor
the twometals. The bands
for Sc
calculated by Flemingand Loucks'
are
shown inFig. 2.
Whilea
certain similarity willexist,
the bands near theFermi
level canbe expected to show some appreciable differencesas
one goes from Sc to Yto, say, Gd. In particular, we have noted that the shape of the bandI',
-Z,
-M',-K, is
nearly the samefor
Gd andRe (it
is
basicallya
pure 5d state) butfor Sc it
is
quite different (itnevercrosses
aboveE~
at M).Presumably, in Scthe state
is
a
M state and theJ.
B.
WEAVER
ANDD.
VY.LYNCH
I.O
A
EIIc
I-0
I-0.
4—
C)(/) Q3
YTTRIUM
FIG.
1.
Absorptivity of singlecrystals of Y at
4.
2K.0.2—
0.0
0.
0
2.
0
PHOTON ENERGY (eV)
while we expect certain differences,
it
is
possible to make certain conservative identificationsfor
some of the observed opticalstructure.
Fx'om the absorptivity, we
see a
slight shculderat about
0.
45 eVfor
E )(B.For
Sc, parallel bandscross
theFermi
sux'face al.ong Tandare
separated,by about
0.
25 eV (seeFig.
2).
These T~and Tzbands probably
persist
in Yand would giverise
to the observed anisotropic structure whichoccurs
atlow energy for EII
c
only. Such transitionsare
for-bidden by
electric
dipole selection rulesfor
ELe.
3Further, selection rules allow transitions
Zs-
Zzf»
EII8which should appear in Y, andare
sepa-rated in Scby
-O.
6 eV; since the bandsare
notparallel, the absorption would be relatively weak.
Transitions atHand nearby regions of k space
would likewise contribute to the structure in
Fig,
1.
For Sc,
Hs-H~(-0.
9eV, both polarizations) andnear H&-Hz
(-0.
5 eV, Ej-c
only) transitionsare
apparent and would probably
persist
inY.
Finally,05—
p+ 6
E~
~
0.5K
C9
K
LLJ 0.2
FIG. 2. Electronic
en-ex'f/' ballcls fox'Scfx'Gill
transitions like
I
ztoI,
(1.
4 eV inSc,
notcalcu-lated
for
Gd Rnd suppressed more deeply belowEz
in Re) might account
for
further absorption. InRO
cases
large volumes of reciprocal space maybe involved, not just regions along symmetry
lines.
It
is
quite impossibleto
make even qualitativees-timates of the origins ofthe higher-energy
struc-tures in A
for
both polarizations.Thus, the data presented here not only RQow ten-tabve information concerning the bands of Y
itself,
but also provide supportfor
the existing bands ofSc
Rnd Gd.I
ikewise, these data represent the onlyexisting data on oriented
crystals
ofY.
It
is
hopedthat
a
more detailed calculation of the bands ofYwill follow
as
more experimental informationbe-comes available for
Y.
More positive identifica-tions than those presented here must await thesebRnds and measurements in the vacuum ultraviolet
of (probably) ultrahigh-vacuum-evaporated films
ofY, which, when used in conjunction with our
data, will make
it
possible to determine the opticalcons'tants.
The authors thank
B.
Beaudry andP. E.
Palmerfor
providing the starting material andF.
A.Schmidt
for
strain annealing the material to obtain the singlecrystal.
'L. %.Bosand D. %.Lynch, Phys. Rev.
8
2, 4567 (1970). For results on Cr see also A. S.Barker and J.A.Ditzenberger, Phys, Rev. B1,4378 (1970).
'D, W, Lynch and C. G. Olson, Phys. Rev.
8
(to be published).'J.H. Weaver, D. W. Lynch, and C. G.Olson, Phys. Rev.
8
(to be published)."J.H.Weaver, D.W. Lynch, and C. G. Olson (unpublished).
'Transparent films of Y have been investigated over the range of
~
1.5-6 eV and minima in the transmission have been noted at~
2.5 and 5.6eVtJ.P.Petrakian, J.P.Palmari, and G.Rasigni, Appl. Opt. 9, 2115(1970}],
T. L.Loucks, Phys. Rev. 144, 504 (1966). 'T, L. Loucks, Phys. Rev. 159, 544 {1967}.
'L
F.Mattheiss, Phys. Rev. 143, 506(1966).J.O.Dimmock and A. J.Freeman, Phys. Rev. Lett.
13,750 (1964).
10S. C.
Keeton, Ph.D. dissertation (Iowa StateUniversity,
1966)(unpublished).
"G.
S.Fleming and T. L.Loucks, Phys. Rev. 173,685(1968}.
"D.
E.Eastman, Solid State Commun. 7, 1697(1969).'3J. F.Cornwell, Phys. Kondens. Mater. 4, 327 (1966).
PHYSICAL
BE
VIEVf B VOLUME7,
NUMBER10
15
MAY1973
Hot-Electron
Hall Transport
in n-Type
GermaniumD.
ChattopadhyayInstitute ofRadio Physics and Electronics, University ofCalcutta, Calcutta-9 India (Received 11October 1972)
The hot-electron Hall coefficient in n-Ge istheoretically estimated incorporating the band nonparabolicity, the electron transfer tothe &100) minima, and the effect ofthe magnetic field on the distribution function. A better agreement with the nature ofthe experimental curve at 200'Kis obtained when the
nonparabolicity isconsidered than when it is ignored, Aclose fit with experiment requires the value ofthe deformation-potential constants forthe optical and for the nonequivalent intervalley scattering to be
0.66)& 109 and 0.5&109 eVcm ',respectively.
I. INTRODUCTION
Ina,n
earlier
paper,'
calculations ofthe Hallfactor inz-type germanium athigh
electric
fields were reported taking into account the influence ofthe electron population in the (100)minima and
that ofthe magnetic field on the valley distribution function. The nonparabolicity of the
(111)
bands was, however, not included in these calculationsand the value ofthe optical-phonon
deformation-potential constant Do required for an agreement
with the experimental results at 200
'K
was foundtobeunusually high.
It
may be mentioned thatwhen parabolic bands
are
considered, there re-main discrepancies in the values ofBoobtainedfrom various studies. ~ Incorporation of
nonparabol-icity has recently been found to reduce to
a
largeextent the disparity in the Dovalues obtained from
the conductivity results at high and low
electric
fields. '
It
would be of interest to examinewheth-er
the hot-electron Hall-coefficientcharacteristic
can also be explained with the same value ofDoas
that obtained from the conductivity data when the nonparabolic nature ofthe band structure
is
takeninto account in addition to the
carrier
transfer
tothe (100)minima and the influence of the magnetic
field on the
carrier
distribution function. In this paper we present the results of such calculations.We have also studied the effect of
a
change in thecoupling constant