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Advanced Source Injector for N-type Enhancement-Mode GaN based Schottky Barrier MOSFET with Source/Drain Extension

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Figure

Figure of Merits. [*1; ** 2]
Figure 1.1: Simple Schematic of Ideal Drift Region
Figure 1.2: Comparison of Ideal Specific Resistances for Si, 4H-SiC, and GaN [4]
Figure 1.3: Chart for Performance Comparison of Various Semiconductor Materials in Output Power and
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Outline

Outline of Dissertation Characterization of FATFET with Gate-to-Source Overlap Model Dependency on V DS Analytical Model Improvement for Short Channel GaN Schottky Barrier Initial GaN Wafer Preparation and SiO 2 Surface Passivation

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