CYStek Electronics Corp.

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MTB035P03N3 Preliminary CYStek Product Specification

P-Channel Enhancement Mode MOSFET

MTB035P03N3

Features

• Low On Resistance

• Low Gate Charge

• Fast Switching Characteristic

Equivalent Circuit Outline

Ordering Information

Device Package Shipping

MTB035P03N3-0-T1-G SOT-23

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

SOT-23

MTB035P03N3

Packing spec, T1 : 3000 pcs / tape & reel,7” reel

Product rank, zero for no rank products

BV

^DSS

-30V

I

D

@V

GS

=-10V, T

A

=25°C -4.5A

R

DS(ON) typ.

@ V

^GS

=-10V, I

^D

=-4A 29mΩ

R

DS(ON) typ.

@ V

GS

=-4.5V, I

D

=-3.5A 42mΩ

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Product name

D

G

S

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Absolute Maximum Ratings (T

^A

=25C)

Parameter Symbol Limits Unit

Drain-Source Voltage V

^DS

-30

Gate-Source Voltage V

^GS

±20 V

Continuous Drain Current @ V

^GS

=-10V, T

^A

=25C

*a

I

D

-4.5

A

Continuous Drain Current @ V

^GS

=-10V, T

^A

=100C

*a

-3.6

Pulsed Drain Current

*b

I

DM

-18

Continuous Body Diode Forward Current @ T

^A

=25C

*a

I

^S

-1

Avalanche Current @ L=0.1mH I

^AS

-12

Avalanche Energy @ L=0.5mH E

^AS

12 mJ

Total Power Dissipation T

A

=25C

*a

P

D

1.4 T

^A

=70C

*a

0.9 W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55~+150 C

Thermal Data

Parameter Symbol Steady State Unit

Thermal Resistance, Junction-to-ambient

*a

R

^θJA

90 C/W

Note:

*a. The value of R

θJA

is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment

with T

A

=25°C. The power dissipation P

D

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The

value in any given application depends on the user’s specific board design.

*b. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and

low duty cycles to keep initial T

J

=25°C.

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Electrical Characteristics ( T

^A

=25C, unless otherwise specified )

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV

DSS

-30 - -

V V

GS

=0V, I

D

=-250μA

V

GS(th)

-1 - -2.5 V

DS

=V

GS

, I

D

=-250μA

G

FS

- 6.5 - S V

DS

=-10V, I

D

=-4A

I

GSS

- - ±100 nA V

GS

=±20V, V

DS

=0V

I

DSS

- - -1 μA V

DS

=-24V, V

GS

=0V

R

DS(ON)

- 29 38

mΩ V

GS

=-10V, I

D

=-4A

- 42 59 V

GS

=-4.5V, I

D

=-3.5A

Dynamic

Ciss - 925 -

pF V

DS

=-15V, V

GS

=0V, f=1MHz

Coss - 110 -

Crss - 90 -

Rg - 22 - Ω f=1MHz

Qg

*1, 2

- 21 -

nC V

^DS

=-15V, I

^D

=-4A, V

^GS

=-10V

Qgs

*1, 2

- 3.6 -

Qgd

*1, 2

- 4.5 -

t

d(ON) *1, 2

- 6.8 -

ns V

^DS

=-15V, I

^D

=-4A, V

^GS

=-10V, R

^GS

=6Ω

tr

*1, 2

- 17 -

t

d(OFF)*1, 2

- 94 -

t

f *1, 2

- 48 -

Source-Drain Diode

V

SD *1

- -0.83 -1.2 V I

S

=-4A, V

GS

=0V

trr - 9.5 - ns

I

F

=-4A, dI

F

/dt=100A/μs

Qrr - 4.5 - nC

Note:

*1. Pulse Test : Pulse Width  300μs, Duty Cycle  2%

*2. Independent of operating temperature

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Typical Characteristics

0 5 10 15 20

0 2 4 6 8 10

-ID, Drain Current(A)

-V^DS, Drain-Source Voltage(V) Typical Output Characteristics -10V,-9V,-8V,-7V,-6V-5V,-4V

VGS=-2.5V -3.5V

-3V

0.8 0.9 1 1.1 1.2

-75 -50 -25 0 25 50 75 100 125 150 175 -BVDSS, Normalized Drain-Source Breakdown Voltage

TJ, Junction Temperature(°C) Breakdown Voltage vs Ambient Temperature

ID=-250μA VGS=0V

20 25 30 35 40 45 50

0 5 10 15 20

RDS(ON), Static Drain-Source On-State Resistance(mΩ)

Static Drain-Source On-State resistance vs Drain Current

VGS=-10V VGS=-4.5V

0.2 0.4 0.6 0.8 1 1.2

0 5 10 15 20

-VSD, Source-Drain Voltage(V)

-I^S, Body Diode Current(A) Body Diode Current vs Source-Drain Voltage

TJ=25°C

TJ=150°C

0 40 80 120 160

0 2 4 6 8 10

RDS(ON), Static Drain-Source On-State Resistance(mΩ)

-V^GS, Gate-Source Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source

Voltage

ID=-4A

0 0.5 1 1.5 2 2.5

-75 -50 -25 0 25 50 75 100 125 150 175 RDS(ON), Normalized Static Drain-Source On-State Resistance

TJ, Junction Temperature(°C)

Drain-Source On-State Resistance vs Junction Temperature

VGS=-10V, ID=-4A

RDS(ON)@TJ=25°C : 29mΩ typ.

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Typical Characteristics (Cont.)

10 100 1000 10000

0 5 10 15 20 25 30

Capacitance(pF)

-VDS, Drain-Source Voltage(V) Capacitance vs Drain-to-Source Voltage

Ciss

Coss

Crss

0.4 0.6 0.8 1 1.2 1.4

-75 -50 -25 0 25 50 75 100 125 150 175

-VGS(th), Normalized Threshold Voltage

TJ, Junction Temperature(°C) Threshold Voltage vs Junction Temperature

ID=-250μA ID=-1mA

0.01 0.1 1 10

0.001 0.01 0.1 1 10

GFS, Forward Transfer Admittance(S)

-I^D, Drain Current(A)

Forward Transfer Admittance vs Drain Current

TA=25°C Pulsed

VDS=-15V VDS=-10V

0 2 4 6 8 10

0 4 8 12 16 20 24

-VGS, Gate-Source Voltage(V)

Qg, Total Gate Charge(nC)

Gate Charge Characteristics

VDS=-15V ID=-4A

0.01 0.1 1 10 100

-V^DS, Drain-Source Voltage(V) Maximum Safe Operating Area

DC 100ms 10ms

100μs 1ms RDS(ON)

Limited

TA=25°C, TJ=150°C VGS=-10V,RθJA=90°C/W Single Pulse

1s 10s

0 1 2 3 4 5

25 50 75 100 125 150 175

-ID, Maximum Drain Current(A)

T^J, Junction Temperature(°C) Maximum Drain Current vs Junction Temperature

VGS=-10V, RθJA=90°C/W

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Typical Characteristics (Cont.)

Recommended Soldering Footprint

0

40 80 120 160 200

0.0001 0.001 0.01 0.1 1 10 100

Power (W)

Pulse Width(s)

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C TA=25°C RθJA=90°C/W

0.001 0.01 0.1 1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

r(t), Normalized Effective Transient Thermal Resistance

t1, Square Wave Pulse Duration(s) Transient Thermal Response Curves

0.01, Single Pulse 0.02

0.05 0.1 0.2 D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W

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Reel Dimension

Carrier Tape Dimension

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Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly

Average ramp-up rate

(Tsmax to Tp) 3C/second max. 3C/second max.

Preheat

−Temperature Min(T

^S

min)

−Temperature Max(T

^S

max)

−Time(ts

^min

to ts

^max

)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (T

L

)

− Time (t

L

) 183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(T

^P

) 240 +0/-5 C 260 +0/-5 C

Time within 5C of actual peak

temperature(tp) 10-30 seconds 20-40 seconds

Ramp down rate 6C/second max. 6C/second max.

Time 25 C to peak temperature 6 minutes max. 8 minutes max.

Note : All temperatures refer to topside of the package, measured on the package body surface.

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SOT-23 Dimension

DIM Inches Millimeters

Min. Max. Min. Max. Min. Max. Min. Max.

A 0.1102 0.1204 2.80 3.04 J 0.0032 0.0079 0.08 0.20

B 0.0472 0.0669 1.20 1.70 K 0.0118 0.0266 0.30 0.67

C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15

D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0000 0.0040 0.00 0.10 L1 0.0118 0.0197 0.30 0.50

Notes:

1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.