JESD209-4 LPDDR4

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JEDEC SOLID STATE TECHNOLOGY ASSOCIATION

AUGUST 2014

JEDEC

STANDARD

Low Power Double Data Rate 4

JESD209-4

(LPDDR4)

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NOTICE

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JEDEC Standard No. 209-4 Page 1

LOW POWER DOUBLE DATA RATE 4 (LPDDR4)

(From JEDEC Board Ballot JCB-14-41, formulated under the cognizance of the JC-42.6 Subcommittee on Low Power Memories.)

1 Scope

This document defines the LPDDR4 standard, including features, functionalities, AC and DC

characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for JEDEC compliant 4 Gb through 32 Gb for x16x2channel SDRAM devices. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2) and LPDDR3 (JESD209-3). Each aspect of the standard was considered and approved by committee ballot(s). The accumulation of these ballots was then incorporated to prepare the LPDDR4 standard.

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1

2 Package Ballout & Pin Definition

2.1 Pad Order

NOTE 1 Applications are recommended to follow bit/byte assignments. Bit or Byte swapping at the application level requires review of MR and calibration features assigned to specific data bits/bytes.

NOTE 2 Additional pads are allowed for DRAM mfg-specific pads (“DNU”), or additional power pads as long as the extra pads are grouped with like-named pads.

Ch. A Top Ch. B Top 1 VDD2 41 VDD2 101 VDD2 141 VDD2 2 VSS 42 CKE_A 102 VSS 142 CKE_B 3 VDD1 43 CS_A 103 VDD1 143 CS_B 4 VDD2 44 VSS 104 VDD2 144 VSS 5 VSS 45 CA1_A 105 VSS 145 CA1_B 6 VSSQ 46 CA0_A 106 VSSQ 146 CA0_B 7 DQ8_A 47 VDD2 107 DQ8_B 147 VDD2 8 VDDQ 48 ODT(ca)_A 108 VDDQ 148 ODT(ca)_B 9 DQ9_A 49 VSS 109 DQ9_B 149 VSS 10 VSSQ 50 VDD1 110 VSSQ 150 VDD1 11 DQ10_A 51 VSSQ 111 DQ10_B 151 VSSQ 12 VDDQ 52 DQ7_A 112 VDDQ 152 DQ7_B 13 DQ11_A 53 VDDQ 113 DQ11_B 153 VDDQ 14 VSSQ 54 DQ6_A 114 VSSQ 154 DQ6_B 15 DQS1_t_A 55 VSSQ 115 DQS1_t_B 155 VSSQ 16 DQS1_c_A 56 DQ5_A 116 DQS1_c_B 156 DQ5_B 17 VDDQ 57 VDDQ 117 VDDQ 157 VDDQ

18 DMI1_A 58 DQ4_A 118 DMI1_B 158 DQ4_B

19 VSSQ 59 VSSQ 119 VSSQ 159 VSSQ

20 DQ12_A 60 DMI0_A 120 DQ12_B 160 DMI0_B

21 VDDQ 61 VDDQ 121 VDDQ 161 VDDQ 22 DQ13_A 62 DQS0_c_A 122 DQ13_B 162 DQS0_c_B 23 VSSQ 63 DQS0_t_A 123 VSSQ 163 DQS0_t_B 24 DQ14_A 64 VSSQ 124 DQ14_B 164 VSSQ 25 VDDQ 65 DQ3_A 125 VDDQ 165 DQ3_B 26 DQ15_A 66 VDDQ 126 DQ15_B 166 VDDQ 27 VSSQ 67 DQ2_A 127 VSSQ 167 DQ2_B 28 ZQ 68 VSSQ 128 RESET_n 168 VSSQ 29 VDDQ 69 DQ1_A 129 VDDQ 169 DQ1_B 30 VDD2 70 VDDQ 130 VDD2 170 VDDQ 31 VDD1 71 DQ0_A 131 VDD1 171 DQ0_B 32 VSS 72 VSSQ 132 VSS 172 VSSQ 33 CA5_A 73 VSS 133 CA5_B 173 VSS 34 CA4_A 74 VDD2 134 CA4_B 174 VDD2 35 VDD2 75 VDD1 135 VDD2 175 VDD1 36 CA3_A 76 VSS 136 CA3_B 176 VSS 37 CA2_A 77 VDD2 137 CA2_B 177 VDD2 38 VSS Ch. A Bottom 138 VSS Ch. B Bottom 39 CK_c_A 139 CK_c_B 40 CK_t_A 140 CK_t_B Top Boom Channel B Channel A

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2.2 Package Ballout

2.2.1 272-ball 15mm x 15mm 0.4mm pitch, Quad-Channel POP FBGA (top view) Using Variation VFFCDB for MO-273

NOTE 1 15mm x 15mm, 0.4mm ball pitch NOTE 2 272 ball count, 36 rows

NOTE 3 Top View, A1 in top left corner

NOTE 4 ODT ca_[x] balls are wired to ODT(ca)_[x] pads of Rank 0 DRAM die. ODT(ca)_[x] pads for other ranks (if present) are disabled in the package.

NOTE 5 Package Channel a and Channel c shall be assigned to die Channel A of different DRAM die. NOTE 6 Die pad VSS and VSSQ signals are combined to VSS package balls.

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2.2.2 200-ball x32 Discrete Package, 0.80mm x 0.65mm using MO-311

NOTE 1 0.8mm pitch (X-axis), 0.65mm pitch (Y-axis), 22 rows. NOTE 2 Top View, A1 in top left corner.

NOTE 3 ODT_CA_[x] balls are wired to ODT_CA)_[x] pads of Rank 0 DRAM die. ODT(ca)_[x] pads for other ranks (if present) are disabled in the package.

NOTE 4 ZQ2, CKE2_A, CKE2_B, CS2_A, and CS2_B balls are reserved for 3-rank package. For 1-rank and 2-rank package those balls are NC.

NOTE 5 Die pad VSS and VSSQ signals are combined to VSS package balls.

0.80mm Pitch

1 2 3 4 5 6 7 8 9 10 11 12

A DNU DNU VSS VDD2 ZQ0 ZQ1 VDD2 VSS DNU DNU

B DNU DQ0_A VDDQ DQ7_A VDDQ VDDQ DQ15_A VDDQ DQ8_A DNU

C VSS DQ1_A DMI0_A DQ6_A VSS VSS DQ14_A DMI1_A DQ9_A VSS

D VDDQ VSS DQS0_T_A VSS VDDQ VDDQ VSS DQS1_T_A VSS VDDQ

E VSS DQ2_A DQS0_C_

A DQ5_A VSS VSS DQ13_A

DQS1_C_

A DQ10_A VSS

F VDD1 DQ3_A VDDQ DQ4_A VDD2 VDD2 DQ12_A VDDQ DQ11_A VDD1

G VSS ODT_CA__A VSS VDD1 VSS VSS VDD1 VSS ZQ2 VSS

0.65mm Pitch

H VDD2 CA0_A CS1_A CS0_A VDD2 VDD2 CA2_A CA3_A CA4_A VDD2

J VSS CA1_A VSS CKE0_A CKE1_A CK_t_A CK_c_A VSS CA5_A VSS

K VDD2 VSS VDD2 VSS CS2_A CKE2_A VSS VDD2 VSS VDD2

L M

N VDD2 VSS VDD2 VSS CS2_B CKE2_B VSS VDD2 VSS VDD2

P VSS CA1_B VSS CKE0_B CKE1_B CK_T_B CK_C_B VSS CA5_B VSS

R VDD2 CA0_B CS1_B CS0_B VDD2 VDD2 CA2_B CA3_B CA4_B VDD2

T VSS ODT_CA_ B VSS VDD1 VSS VSS VDD1 VSS RESET_N VSS U VDD1 DQ3_B VDDQ DQ4_B VDD2 VDD2 DQ12_B VDDQ DQ11_B VDD1 V VSS DQ2_B DQS0_C_ B DQ5_B VSS VSS DQ13_B DQS1_C_ B DQ10_B VSS W VDDQ VSS DQS0_T_B VSS VDDQ VDDQ VSS DQS1_T_B VSS VDDQ Y VSS DQ1_B DMI0_B DQ6_B VSS VSS DQ14_B DMI1_B DQ9_B VSS AA DNU DQ0_B VDDQ DQ7_B VDDQ VDDQ DQ15_B VDDQ DQ8_B DNU

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JEDEC S tan dar d No.20 9 -4 Pa ge 5

2.2.3 432-ball x64 HDI Discrete Package, 0.50mm x 0.50mm (MO: TBD)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

A VDDQ VDD1 VDDQ VDDQ VDDQ VDD2 VDD2 VDDQ VDDQ VDDQ VDD1 VDDQ VDDQ VDD1 VDDQ VDDQ VDDQ VDD2 VDD2 VDDQ VDDQ VDDQ VDD1 VDDQ A

B VDDQ VDD1 DQ0_A VSS CA0_A VDD2 VDD2 CA4_A VSS DQ8_A VDD1 VDDQ VDDQ VDD1 DQ0_C VSS CA0_C VDD2 VDD2 CA4_C VSS DQ8_C VDD1 VDDQ B C VDDQ DQ1_A VSS DQ5_A VSS CA2_A CA3_A VSS DQ13_A VSS DQ9_A VDDQ VDDQ DQ1_C VSS DQ5_C VSS CA2_C CA3_C VSS DQ13_C VSS DQ9_C VDDQ C D VDDQ VSS DQ4_A VSS CA1_A VDD2 VDD2 CA5_A VSS DQ12_A VSS VDDQ VDDQ VSS DQ4_C VSS CA1_C VDD2 VDD2 CA5_C VSS DQ12_C VSS VDDQ D E VDDQ DQ2_A VSS DQ6_A VSS CLK_t_A CLK_c_A VSS DQ14_A VSS DQ10_A VDDQ VDDQ DQ2_C VSS DQ6_C VSS CLK_t_C CLK_c_C VSS DQ14_C VSS DQ10_C VDDQ E F VDDQ VSS DQS0_t_ A VSS CS1_A VDD2 VDD2 CKE0_A VSS DQS1_t_ A VSS VDDQ VDDQ VSS DQS0_t_ C VSS CS1_C VDD2 VDD2 CKE0_C VSS DQS1_t_ C VSS VDDQ F G VDDQ DQ3_A VSS DQS0_c_ A VSS CS0_A CKE1_A VSS DQS1_c_ A VSS DQ11_A VDDQ VDDQ DQ3_C VSS DQS0_c_ C VSS CS0_C CKE1_C VSS DQS1_c_ C VSS DQ11_C VDDQ G

H VDDQ VSS DMI0_A VSS DQ7_A VDD2 VDD2 DQ15_A VSS DMI1_A VSS VDDQ VDDQ VSS DMI0_C VSS DQ7_C VDD2 VDD2 DQ15_C VSS DMI1_C VSS VDDQ H J VDDQ ZQ3_A ZQ2_A ODT

ca_A CS3_A CS2_A CKE3_A CKE2_A ZQ0_A VSS ZQ1_A VDDQ VDDQ ZQ3_C ZQ2_C ODT

ca_C CS3_C CS2_C CKE3_C CKE2_C ZQ0_C VSS ZQ1_C VDDQ J

K

NOTE 1 0.5 mm ball pitch. MO-TBD NOTE 2 432 ball count

NOTE 3 Top view, A1 in top left corner

NOTE 4 ODT ca_[x] balls are wired to ODT(ca)_[x] pads of Rank 0 DRAM die. ODT(ca)_[x] pads for other ranks (if present) are disabled in the package NOTE 5 Package Channel A and Channel C shall be assigned to die Channel A of different DRAM die

NOTE 6 ZQ2, CKE2_A, CKE2_B, CS2_A, and CS2_B balls are reserved for 3-rank package. ZQ3, CKE3_A,

CKE3_B, CS3_A, and CS3_B balls are reserved for 4-rank package. For 1-rank and 2-rank package those balls are NC NOTE 7 Die pad VSS and VSSQ signals are combined to VSS package balls

K L L M M N N P P R R T T V VDDQ VSS VSS ODT

ca_B CS3_B CS2_B CKE3_B CKE2_B VSS VSS RESET_n VDDQ VDDQ VSS VSS ODT

ca_D CS3_D CS2_D CKE3_D CKE2_D VSS VSS NC VDDQ V

W VDDQ VSS DMI0_B VSS DQ7_B VDD2 VDD2 DQ15_B VSS DMI1_B VSS VDDQ VDDQ VSS DMI0_D VSS DQ7_D VDD2 VDD2 DQ15_D VSS DMI1_D VSS VDDQ W Y VDDQ DQ3_B VSS DQS0_c_ B VSS CS0_B CKE1_B VSS DQS1_c_ B VSS DQ11_B VDDQ VDDQ DQ3_D VSS DQS0_c_ D VSS CS0_D CKE1_D VSS DQS1_c_ D VSS DQ11_D VDDQ Y AA VDDQ VSS DQS0_t_ B VSS CS1_B VDD2 VDD2 CKE0_B VSS DQS1_t_ B VSS VDDQ VDDQ VSS DQS0_t_ D VSS CS1_D VDD2 VDD2 CKE0_D VSS DQS1_t_ D VSS VDDQ AA AB VDDQ DQ2_B VSS DQ6_B VSS CLK_t_B CLK_c_B VSS DQ14_B VSS DQ10_B VDDQ VDDQ DQ2_D VSS DQ6_D VSS CLK_t_D CLK_c_D VSS DQ14_D VSS DQ10_D VDDQ AB AC VDDQ VSS DQ4_B VSS CA1_B VDD2 VDD2 CA5_B VSS DQ12_B VSS VDDQ VDDQ VSS DQ4_D VSS CA1_D VDD2 VDD2 CA5_D VSS DQ12_D VSS VDDQ AC AD VDDQ DQ1_B VSS DQ5_B VSS CA2_B CA3_B VSS DQ13_B VSS DQ9_B VDDQ VDDQ DQ1_D VSS DQ5_D VSS CA2_D CA3_D VSS DQ13_D VSS DQ9_D VDDQ AD AE VDDQ VDD1 DQ0_B VSS CA0_B VDD2 VDD2 CA4_B VSS DQ8_B VDD1 VDDQ VDDQ VDD1 DQ0_D VSS CA0_D VDD2 VDD2 CA4_D VSS DQ8_D VDD1 VDDQ AE

AF VDDQ VDD1 VDDQ VDDQ VDDQ VDD2 VDD2 VDDQ VDDQ VDDQ VDD1 VDDQ VDDQ VDD1 VDDQ VDDQ VDDQ VDD2 VDD2 VDDQ VDDQ VDDQ VDD1 VDDQ AF

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2.3 Pad Definition and Description

Table 1 — Pad Definition and Description

Symbol Type Description

CK_t_A, CK_c_A, CK_t_B, CK_c_B

Input

Clock: CK_t and CK_c are differential clock inputs. All address, command, and control input signals are sampled on the crossing of the positive edge of CK_t and the negative edge of CK_c. AC timings for CA parameters are referenced to CK. Each channel (A & B) has its own clock pair.

CKE_A

CKE_B Input

Clock Enable: CKE HIGH activates and CKE LOW deactivates the internal clock circuits, input buffers, and output drivers. Power-saving modes are entered and exited via CKE transitions. CKE is part of the command code. Each channel (A & B) has its own CKE signal.

CS_A

CS_B Input

Chip Select: CS is part of the command code. Each channel (A & B) has its own CS signal.

CA[5:0]_A

CA[5:0]_B Input

Command/Address Inputs: CA signals provide the Command and Address inputs according to Table 63 — Command Truth Table. Each channel (A&B) has its own CA signals.

ODT_CA_A

ODT_CA_B Input

CA ODT Control: The ODT_CA pin is used in conjunction with the Mode Register to turn on/off the On-Die-Termination for CA pins.

DQ[15:0]_A,

DQ[15:0]_B I/O Data Input/Output: Bi-direction data bus.

DQS[1:0]_t_A, DQS[1:0]_c_A, DQS[1:0]_t_B, DQS[1:0]_c_B

I/O

Data Strobe: DQS_t and DQS_c are bi-directional differential output clock signals used to strobe data during a READ or WRITE. The Data Strobe is generated by the DRAM for a READ and is edge-aligned with Data. The Data Strobe is generated by the Memory Controller for a WRITE and must arrive prior to Data. Each byte of data has a Data Strobe signal pair. Each channel (A & B) has its own DQS strobes.

DMI[1:0]_A,

DMI[1:0]_B I/O

Data Mask Inversion: DMI is a bi-directional signal which is driven HIGH when the data on the data bus is inverted, or driven LOW when the data is in its normal state. Data Inversion can be disabled via a mode register setting. Each byte of data has a DMI signal. Each channel (A & B) has its own DMI signals.

ZQ Reference

Calibration Reference: Used to calibrate the output drive strength and the termination resistance. There is one ZQ pin per die. The ZQ pin shall be

connected to V_DDQ through a 240Ω ± 1% resistor.

VDDQ,

VDD1,

VDD2

Supply Power Supplies: Isolated on the die for improved noise immunity.

VSS, VSSQ GND Ground Reference: Power supply ground reference

RESET_n Input RESET: When asserted LOW, the RESET_n signal resets both channels of

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3 Functional Description

LPDDR4-SDRAM is a high-speed synchronous DRAM device internally configured as 2-channel and 8-bank per channel memory that is up to 16Gb density. The configuration for the device density that is

greater than 16Gb is still TBD1.

These devices contain the following number of bits: 4Gb has 4,294,967,296 bits 6Gb has 6,442,450,944 bits 8Gb has 8,589,934,592 bits 12Gb has 12,884,901,888 bits 16Gb has 17,179,869,184 bits 24Gb has 25,769,803,776 bits 32Gb has 34,359,738,368 bits

LPDDR4 devices use a 2 or 4 clocks architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. The 6-bit CA bus contains command, address, and bank information. Each command uses 1, 2 or 4 clock cycle, during which command information is transferred on the positive edge of the clock. See Table 63 — Command Truth Table, for details.

These devices use a double data rate architecture on the DQ pins to achieve high speed operation. The double data rate architecture is essentially an 16n prefetch architecture with an interface designed to transfer two data bits per DQ every clock cycle at the I/O pins. A single read or write access for the LPDDR4 SDRAM effectively consists of a single 16n-bit wide, one clock cycle data transfer at the internal DRAM core and eight corresponding n-bit wide, one half-clock-cycle data transfers at the I/O pins. Read and write accesses to the LPDDR4 SDRAMs are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Activate command, which is then followed by a Read, Write or Mask Write command. The address and BA bits registered coincident with the Activate command are used to select the row and the bank to be accessed. The address bits registered coincident with the Read, Write or Mask Write command are used to select the bank and the starting column location for the burst access.

Prior to normal operation, the LPDDR4 SDRAM must be initialized. The following provides detailed information covering device initialization, register definition, command description and device operation.

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3.1 LPDDR4 SDRAM Addressing

Table 2 — LPDDR4 SDRAM Addressing

NOTE 1 The lower two column addresses (C0 - C1) are assumed to be “zero” and are not transmitted on the CA bus. NOTE 2 Row and Column address values on the CA bus that are not used for a particular density be at valid logic levels. NOTE 3 For non - binary memory densities,only half of the row address space is valid. When the MSB address bit is “HIGH”, then the MSB - 1 address bit must be “LOW”.

NOTE 4 TBD, as of publication of this document, under discussion by the formulating committee. Memory Density (per Die) 4Gb 6Gb 8Gb 12Gb 16Gb 24Gb 32Gb Memory Density (per channel) 2Gb 3Gb 4Gb 6Gb 8Gb 12Gb 16Gb Configuration 16Mb x 16DQ x 8 banks x 2 channels 24Mb x 16DQ x 8 banks x 2 channels 32Mb x 16DQ x 8 banks x 2 channels 48Mb x 16DQ x 8 banks x 2 channels 64Mb x 16DQ x 8 banks x 2 channels TBD x 16DQ x TBD banks x 2 channels TBD x 16DQ x TBD banks x 2 channels Number of Channels (per die) 2 2 2 2 2 2 2 Number of Banks (per channel) 8 8 8 8 8 TBD TBD Array Pre-Fetch (bits, per channel) 256 256 256 256 256 256 256 Number of Rows (per channel) 16,384 24,576 32,768 49,152 65,536 TBD TBD Number of Columns (fetch boundaries) 64 64 64 64 64 TBD TBD Page Size (Bytes) 2048 2048 2048 2048 2048 TBD TBD Channel Density (Bits per channel) 2,147,483,648 3,221,225,472 4,294,967,296 6,442,450,944 8,589,934,592 12,884,901,888 17,179,869,184 Total Density

(Bits per die) 4,294,967,296 6,442,450,944 8,589,934,592 12,884,901,888 17,179,869,184 25,769,803,776 34,359,738,368

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2 BA0 - BA2 BA0 - BA2 TBD TBD

x16 Row Addresses R0 - R13 R0 - R14 (R13=0 when R14=1) R0 - R14 R0 - R15 (R14=0 when R15=1) R0 - R15 TBD TBD Column Addresses C0 - C9 C0 - C9 C0 - C9 C0 - C9 C0 - C9 TBD TBD Burst Starting Address Boundary

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3.2 Simplified LPDDR4 State Diagram

LPDDR4-SDRAM state diagram provides a simplified illustration of allowed state transitions and the related commands to control them. For a complete definition of the device behavior, the information provided by the state diagram should be integrated with the truth tables and timing specification.

The truth tables provide complementary information to the state diagram, they clarify the device behavior and the applied restrictions when considering the actual state of all the banks.

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Figure 1 — LPDDR4: Simplified Bus Interface State Diagram-1

Idle Power On Reset R es et__n = L R es et_ n = H MPC Based Training MRW MRW Per Bank Refresh REF MPC All Bank Refresh MPC Based Training REF MPC Self Refresh SRE SRX MPC MPC Based Training SR Power Down C KE =H C K E₌ L MRW MRW Power Down PDX PDE ACT Activating MRR MRR MRR Command Bus Training MRW MRW Bank Active MRW Active Power Down MRW MRR Per Bank Refresh Read Write or MWR Read with Auto-Precharge Write or MWR with Auto-Precharge Pre-charging PDX PDE MRR REF RD RD WR or MWR MPC Based Training WR or MWR RDA WRA or MWRA RDA PRE or PREA PRE or PREA PRE or PREA WRA or MWRA

PRE(A) = Precharge (All)

MRW = Mode Register Write

SRE = Enter Self Refresh

REF = Refresh

PDE = Enter Power Down PDX = Exit Power Down ACT = Activate

MRR = Mode Register Read

SRX = Exit Self Refresh

WR(A) = Write (with Autoprecharge)

RD(A) = Read (with Autoprecharge) MWR(A) = Mask-Write (with Autoprecharge)

MPC = Multi-Purpose Command (w/NOP) Automatic Sequence Command Sequence MRR MRR Command Bus Training MRW MRW Idle

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NOTE 1 From the Self-Refresh state the device can enter Power-Down, MRR, MRW, or MPC states. See 4.13, on Self-Refresh for more information.

NOTE 2 In IDLE state, all banks are pre-charged.

NOTE 3 In the case of a MRW command to enter a training mode, the state machine will not automatically return to the IDLE state at the conclusion of training. See 4.17, on Mode Register Write (MRW) for more information.

NOTE 4 In the case of a MPC command to enter a training mode, the state machine may not automatically return to the IDLE state at the conclusion of training. See 4.28, Multi-Purpose Command (MPC) for more information.

NOTE 5 This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands to control them. In particular, situations involving more than one bank, the enabling or disabling of on-die termination, and some other events are not captured in full detail.

NOTE 6 States that have an “automatic return” and can be accessed from more than one prior state (Ex. MRW from either Idle or Active states) will return to the state from when they were initiated (Ex. MRW from Idle will return to Idle). NOTE 7 The RESET_n pin can be asserted from any state, and will cause the SDRAM to go to the Reset State. The diagram shows RESET applied from the Power-On as an example, but the Diagram should not be construed as a restriction on RESET_n.

Figure 2 — LPDDR4: Simplified Bus Interface State Diagram-2

MPC Based Training MPC FIFO WRTR FIFO RDTR MPC MPC MPC MPC

A) FIFO Based Write / Read Timing

B) Read DQ Calibration DQ Calibration MPC MPC C) ZQ CAL Start ZQ Calibration MPC Start D) ZQ CAL Latch ZQ Calibration MPC Latch MRW WRTR MRW MPC MRW

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3.3 Power-up, Initialization and Power-off Procedure

For power-up and reset initialization, in order to prevent DRAM from functioning improperly, default values of the following MR settings are defined as Table 3.

Table 3 — MRS defaults settings

3.3.1 Voltage Ramp and Device Initialization

The following sequence shall be used to power up the LPDDR4 device. Unless specified otherwise, these steps are mandatory. Note that the power-up sequence of all channels must proceed simultaneously. 1. While applying power (after Ta), RESET_n is recommended to be LOW (≤0.2 x VDD2) and all other

inputs must be between VILmin and VIHmax. The device outputs remain at High-Z while RESET_n is held LOW. Power supply voltage ramp requirements are provided in Table 4. VDD1 must ramp at the same time or earlier than VDD2. VDD2 must ramp at the same time or earlier than VDDQ.

Table 4 — Voltage Ramp Conditions

NOTE 1 Ta is the point when any power supply first reaches 300mV.

NOTE 2 Voltage ramp conditions in Table 4 apply between Ta and power-off (controlled or uncontrolled). NOTE 3 Tb is the point at which all supply and reference voltages are within their defined ranges. NOTE 4 Power ramp duration tINIT0 (Tb-Ta) must not exceed 20ms.

NOTE 5 The voltage difference between any of Vss and Vssq pins must not excess 100mV.

2. Following the completion of the voltage ramp (Tb), RESET_n must be maintained LOW. DQ, DMI, DQS_t and DQS_c voltage levels must be between Vssq and Vddq during voltage ramp to avoid latch-up. CKE, CK_t, CK_c, CS_n and CA input levels must be between Vss and VDD2 during voltage ramp to avoid latch-up.

3. Beginning at Tb, RESET_n must remain LOW for at least tINIT1(Tc), after which RESET_n can be de-asserted to HIGH(Tc). At least 10ns before RESET_n de-assertion, CKE is required to be set LOW. All other input signals are "Don't Care".

Item MRS Default _Setting Description

FSP-OP/WR MR13 OP[7:6] 00B FSP-OP/WR[0] are enabled

WLS MR2 OP[6] 0B Write Latency Set 0 is selected

WL MR2 OP[5:3] 000_B WL = 4

RL MR2 OP[2:0] 000_B RL = 6, nRTP=8

nWR MR1 OP[6:4] 000_B nWR = 6

DBI-WR/RD MR3 OP[7:6] 00B Write & Read DBI are disabled

CA ODT MR11 OP[6:4] 000B CA ODT is disabled

DQ ODT MR11 OP[2:0] 000B DQ ODT is disabled

VREF(CA) Setting MR12 OP[6] 1B VREF(CA) Range[1] enabled

V_REF(CA) Value MR12 OP[5:0] 001101_B Range1 : 27.2% of VDD2

V_REF(DQ) Setting MR14 OP[6] 1_B V_REF(DQ) Range[1] enabled

V_REF(DQ) Value MR14 OP[5:0] 001101_B Range1 : 27.2% of VDDQ

After

Applicable Conditions

Ta is reached

VDD1 must be greater than VDD2

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JEDEC S tan da rd No. 209 -4 Page 13

Figure 3 — Power Ramp and Initialization Sequence

4. After RESET_n is de-asserted(Tc), wait at least tINIT3 before activating CKE. Clock(CK_t,CK_c) is required to be started and stabilized for tINIT4 before CKE goes active(Td). CS is required to be maintained LOW when controller activates CKE.

5. After setting CKE high, wait minimum of tINIT5 to issue any MRR or MRW commands(Te). For both MRR and MRW commands, the clock frequency must be within the range defined for tCKb. Some AC parameters (for example, tDQSCK) could have relaxed timings (such as tDQSCKb) before the system is appropriately configured.

6. After completing all MRW commands to set the Pull-up, Pull-down and Rx termination values, the DRAM controller can issue ZQCAL Start command to the memory(Tf). This command is used to calibrate VOH level and output impedance over process, voltage and temperature. In systems where more than one LPDDR4 DRAM devices share one external ZQ resistor, the controller must not overlap the ZQ calibration sequence of each LPDDR4 device. ZQ calibration sequence is completed after tZQCAL (Tg) and the ZQCAL Latch command must be issued to update the DQ drivers and DQ+CA ODT to the calibrated values.

Ta

CK_t CK_c

Tb Tc Te Tf Tg Th Ti Tj Tk

Power Ramp Reset Initialization

tINIT0=20ms(max) tINIT1=200us(min) Td Valid DES DQ Training DES Write Leveling DES CA BUS Training DES ZQ Cal Latch DES ZQ Cal Start DES MRW MRR DES Exit PD tINIT4=5tCK(min) Reset_n Supplies CKE tINIT2=10ns(min) tINIT3=2ms(min) tINIT5=2us(min) Training

tZQCAL = 1us(min) tZQLAT = Max(30ns, 8tCK)(Min) CA[5:0]

CS

Valid

DQs Valid Valid

NOTES : 1. Training is optional and may be done at the system architects discretion. The training sequence after ZQ_CAL Latch(Th, Sequence7~9) in Figure 1 is simplified recommendation and actual training sequence may vary depending on systems.

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3.3.1 Voltage Ramp and Device Initialization

7. After tZQLAT is satisfied (Th) the command bus (internal VREF(ca), CS, and CA) should be trained for

high-speed operation by issuing an MRW command (Command Bus Training Mode). This command is

used to calibrate the device's internal V_REF and align CS/CA with CK for high-speed operation. The

LPDDR4 device will power-up with receivers configured for low-speed operations, and V_REF(ca) set to a

default factory setting. Normal device operation at clock speeds higher than tCKb may not be possible until command bus training has been completed.

NOTE The command bus training MRW command uses the CA bus as inputs for the calibration data stream, and outputs the results asynchronously on the DQ bus. See 4.21, (item 1.), MRW for information on how to enter/exit the training mode.

8. After command bus training, DRAM controller must perform write leveling. Write leveling mode is enabled when MR2 OP[7] is high (Ti). See 4.23, Mode Register Write-WR Leveling Mode, for detailed description of write leveling entry and exit sequence. In write leveling mode, the DRAM controller adjusts write DQS_t/_c timing to the point where the LPDDR4 device recognizes the start of write DQ data burst with desired write latency.

9. After write leveling, the DQ Bus (internal V_REF(dq), DQS, and DQ) should be trained for high-speed

operation using the MPC training commands and by issuing MRW commands to adjust VREF(dq)(Tj).

The LPDDR4 device will power-up with receivers configured for low-speed operations and VREF(dq) set

to a default factory setting. Normal device operation at clock speeds higher than tCKb should not be attempted until DQ Bus training has been completed. The MPC Read Calibration command is used together with MPC FIFO Write/Read commands to train DQ bus without disturbing the memory array contents. See 4.25, DQ Bus Training for detailed DQ Bus Training sequence.

10. At Tk the LPDDR4 device is ready for normal operation, and is ready to accept any valid command. Any more registers that have not previously been set up for normal operation should be written at this time.

Table 5 — Initialization Timing Parameters

NOTE 1 Min tCKb guaranteed by DRAM test is 18ns.

NOTE 2 The system may boot at a higher frequency than dictated by min tCKb. The higher boot frequency is system dependent.

Parameter Value Unit Comment

Min Max

tINIT0 - 20 ms Maximum voltage-ramp time

tINIT1 200 - us Minimum RESET_n LOW time after completion of

voltage ramp

tINIT2 10 - ns Minimum CKE low time before RESET_n high

tINIT3 2 - ms Minimum CKE low time after RESET_n high

tINIT4 5 - tCK Minimum stable clock before first CKE high

tINIT5 2 - us Minimum idle time before first MRW/MRR

command

tZQCAL 1 - us ZQ calibration time

tZQLAT Max(30ns, 8tCK) - ns ZQCAL latch quiet time.

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3.3.2 Reset Initialization with Stable Power

The following sequence is required for RESET at no power interruption initialization.

1. Assert RESET_n below 0.2 x VDD2 anytime when reset is needed. RESET_n needs to be maintained

for minimum tPW_RESET. CKE must be pulled LOW at least 10 ns before de-asserting RESET_n. 2. Repeat steps 4 to 10 in 3.3.1, Voltage Ramp and Device Initialization.

Table 6 — Reset Timing Parameter

3.3.3 Power-off Sequence

The following procedure is required to power off the device.

While powering off, CKE must be held LOW (≤0.2 X VDD2) and all other inputs must be between VILmin

and VIHmax. The device outputs remain at High-Z while CKE is held LOW. DQ, DMI, DQS_t and DQS_c voltage levels must be between Vssq and Vddq during voltage ramp to avoid latch-up. RESET_n, CK_t,

CK_c, CS and CA input levels must be between V_SS and V_DD2 during voltage ramp to avoid latch-up.

Tx is the point where any power supply drops below the minimum value specified.

Tz is the point where all power supplies are below 300mV. After TZ, the device is powered off. Table 7 — Power Supply Conditions

The voltage difference between any of V_SS, V_SSQ pins must not exceed 100mV.

3.3.4 Uncontrolled Power-Off Sequence

When an uncontrolled power-off occurs, the following conditions must be met:

At Tx, when the power supply drops below the minimum values specified, all power supplies must be turned off and all power supply current capacity must be at zero, except any static charge remaining in the system.

After Tz (the point at which all power supplies first reach 300mV), the device must power off. During this

period the relative voltage between power supplies is uncontrolled. VDD1 and VDD2 must decrease with a

slope lower than 0.5V/μs between Tx and Tz.

An uncontrolled power-off sequence can occur a maximum of 400 times over the life of the device. Table 8 — Timing Parameters Power Off

Parameter Value Unit Comment

Min Max

tPW_RESET 100 - ns Minimum RESET_n low Time for Reset

Initialization with stable power

After Applicable Conditions

Tx and Tz VDD1 must be greater than VDD2

VDD2 must be greater than VDDQ - 200mV

Symbol Value Unit Comment

Min Max

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3.4 Mode Register Definition

Table 9 shows the mode registers for LPDDR4 SDRAM. Each register is denoted as "R" if it can be read but not written, "W" if it can be written but not read, and "R/W" if it can be read and written. A Mode Register Read command is used to read a mode register. A Mode Register Write command is used to write a mode register.

Table 9 — Mode Register Assignment in LPDDR4 SDRAM

MR# OP[7] OP[6] OP[5] OP[4] OP[3] OP[2] OP[1] OP[0]

0 CATR RFU RFU RZQI RFU RFU Refresh mode

1 RPST nWR (for AP) RD-PRE WR-PRE BL

2 WR Lev WLS WL RL

3 DBI-WR DBI-RD PDDS PPRP WR PST PU-CAL

4 TUF Thermal Offset PPRE SR Abort Refresh Rate

5 LPDDR4 Manufacturer ID

6 Revision ID-1

7 Revision ID-2

8 IO Width Density Type

9 Vendor Specific Test Register

10 RFU ZQ-Reset

11 RFU CA ODT RFU DQ ODT

12 RFU VR-CA V_REF(ca)

13 FSP-OP FSP-WR DMD RRO VRCG VRO RPT CBT

14 RFU VR(dq) V_REF(dq)

15 Lower-Byte Invert Register for DQ Calibration

16 PASR Bank Mask

17 PASR Segment Mask

18 DQS Oscillator Count - LSB

19 DQS Oscillator Count - MSB

20 Upper-Byte Invert Register for DQ Calibration

21 RFU

22 RFU ODTD-CA ODTE-CS ODTE-CK CODT

23 DQS interval timer run time setting

24 TRR Mode TRR Mode BAn Unlimited

MAC MAC Value

25 PPR Resource 26 RFU 27 RFU 28 RFU 29 RFU 30 RFU 31 RFU

32 DQ Calibration Pattern “A” (default = 5AH)

33 RFU 34 RFU 35 RFU 36 RFU 37 RFU 38 RFU 39 RFU

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3.4.1 MR0 Register Information (MA [7:0] = 00H)

NOTE 1 RZQI, if supported, will be set upon the completion of the MRW ZQ Initialization Calibration command. NOTE 2 If the ZQ-pin is connected to VSSQ to set default calibration, OP[4:3] shall be set to 01_B. If the ZQ-pin is not connected to VSSQ, either OP[4:3] = 01_B or OP[4:3] = 10_B might indicate might indicate a ZQ-pin assembly error. It is recommended that the assembly error is corrected.

NOTE 3 In the case of possible assembly error, the LPDDR4-SDRAM device will default to factory trim settings for RON, and will ignore ZQ Calibration commands. In either case, the device may not function as intended.

NOTE 4 If ZQ Self-Test returns OP[4:3] = 11_B, the device has detected a resistor connected to the ZQ-pin. However, this result cannot be used to validate the ZQ resistor value or that the ZQ resistor tolerance meets the specified limits (i.e., 240Ω ± 1%).

NOTE 5 OP[7] is set at power-up, according to the state of the CA-ODT pad on the die AND the state of MR11 OP[7]. If the CAODT pad is tied LOW, then the die will not terminate the CA bus and MR12 OP[7]=0_B, regardless of the state of ODTECA (MR11 OP[7]). If the CA-ODT pad is tied HIGH AND ODTE-CA is enabled (MR11 OP[7]=1_B), then this bit will be set (MR0 OP[7]=1_B) and the die will terminate the CA bus.

OP[7] OP[6] OP[5] OP[4] OP[3] OP[2] OP[1] OP[0]

CATR RFU RFU RZQI RFU Refresh_mode

Function Register_Type Operand Data Notes

Refresh mode

Read-only

OP[0]

0_B : Both legacy & modified refresh mode supported

1_B : Only modified refresh mode supported

RZQI

(Built-in Self-Test for RZQ) OP[4:3]

00_B: RZQ Self-Test Not Supported 01_B: ZQ pin may connect to V_SSQ or float 10_B: ZQ-pin may short to V_DDQ

11_B: ZQ-pin Self-Test Completed, no error

condition detected (ZQ-pin may not connect to V_SSQ or float, nor short to V_DDQ)

1,2,3,4

CATR

(CA Terminating Rank) OP[7]

0_B: CA for this rank is not terminated

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3.4.2 MR1 Register Information (MA[7:0] = 01H)

NOTE 1 Burst length on-the-fly can be set to either BL=16 or BL=32 by setting the “BL” bit in the command operands. See Table 63 — Command Truth Table.

NOTE 2 The programmed value of nWR is the number of clock cycles the LPDDR4-SDRAM device uses to

determine the starting point of an internal Pre-charge operation after a Write burst with AP (auto-pre-charge) enabled. (Ref. See Latency Code Frequency Table for allowable Frequency Ranges for RL/WL/nWR, available in next revision of this document)

NOTE 3 For Read operations this bit must be set to select between a "toggling" pre-amble and a "Non-toggling" Pre-amble. See 4.4, Read Preamble and Postambil, for a drawing of each type of pre-amble.

NOTE 4 OP[7] provides an optional READ post-amble with an additional rising and falling edge of DQS_t. The optional postamble cycle is provided for the benefit of certain memory controllers.

NOTE 5 There are two physical registers assigned to each bit of this MR parameter, designated set point 0 and set point 1. Only the registers for the set point determined by the state of the FSP-WR bit (MR13 OP[6]) will be written to with an MRW command to this MR address, or read from with an MRR command to this address.

NOTE 6 There are two physical registers assigned to each bit of this MR parameter, designated set point 0 and set point 1. The device will operate only according to the values stored in the registers for the active set point, i.e., the set point determined by the state of the FSP-OP bit (MR13 OP[7]). The values in the registers for the inactive set point will be ignored by the device, and may be changed without affecting device operation.

RPST nWR (for AP) RD-PRE WR-PRE BL

BL (Burst Length) Write-only OP[1:0] 00B: BL=16 Sequential (default) 01_B: BL=32 Sequential 10_B: BL=16 or 32 Sequential (on-the-fly) All Others: Reserved

1,5,6

WR-PRE

(WR Pre-amble Length) OP[2]

0_B: Reserved

1B: WR Pre-amble = 2*tCK 5,6 RD-PRE

(RD Pre-amble Type) OP[3]

0_B: RD Pre-amble = Static (default)

1_B: RD Pre-amble = Toggle 3,5,6

nWR

(Write-Recovery for Auto-Pre-charge commands) OP[6:4] 000B: nWR = 6 (default) 001B: nWR = 10 010B: nWR = 16 011B: nWR = 20 100_B: nWR = 24 101_B: nWR = 30 110_B: nWR = 34 111_B: nWR = 40 2,5,6 RPST

(RD Post-Amble Length) OP[7]

0_B: RD Post-amble = 0.5*tCK (default)

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JEDEC S tan da rd No. 209 -4 Page 19

Table 10 — Burst Sequence for READ

NOTE 1 C0-C1 are assumed to be '0', and are not transmitted on the command bus. NOTE 2 The starting burst address is on 64-bit (4n) boundaries.

Table 11 — Burst Sequence for Write

NOTE 1 C0-C1 are assumed to be '0', and are not transmitted on the command bus. NOTE 2 The starting burst address is on 64-bit (4n) boundaries.

NOTE 3 C2-C3 shall be set to '0' for all Write operations. Burst

LengthBurstType C4 C3 C2 C1 C0

Burst Cycle Number and Burst Address Sequence

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 16 SEQ V 0 0 0 0 0 1 2 3 4 5 6 7 8 9 A B C D E F V 0 1 0 0 4 5 6 7 8 9 A B C D E F 0 1 2 3 V 1 0 0 0 8 9 A B C D E F 0 1 2 3 4 5 6 7 V 1 1 0 0 C D E F 0 1 2 3 4 5 6 7 8 9 A B 32 SEQ 0 0 0 0 0 0 1 2 3 4 5 6 7 8 9 A B C D E F 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 0 0 1 0 0 4 5 6 7 8 9 A B C D E F 0 1 2 3 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 10 11 12 13 0 1 0 0 0 8 9 A B C D E F 0 1 2 3 4 5 6 7 18 19 1A 1B 1C 1D 1E 1F 10 11 12 13 14 15 16 17 0 1 1 0 0 C D E F 0 1 2 3 4 5 6 7 8 9 A B 1C 1D 1E 1F 10 11 12 13 14 15 16 17 18 19 1A 1B 1 0 0 0 0 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 0 1 2 3 4 5 6 7 8 9 A B C D E F 1 0 1 0 0 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 10 11 12 13 4 5 6 7 8 9 A B C D E F 0 1 2 3 1 1 0 0 0 18 19 1A 1B 1C 1D 1E 1F 10 11 12 13 14 15 16 17 8 9 A B C D E F 0 1 2 3 4 5 6 7 1 1 1 0 0 1C 1D 1E 1F 10 11 12 13 14 15 16 17 18 19 1A 1B C D E F 0 1 2 3 4 5 6 7 8 9 A B Burst

LengthBurstType C4 C3 C2 C1 C0

Burst Cycle Number and Burst Address Sequence

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 16 SEQ V 0 0 0 0 0 1 2 3 4 5 6 7 8 9 A B C D E F

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NOTE 1 (Ref. See Latency Code Frequency Table for allowable Frequency Ranges for RL/WL/nWR/nRTP, available in next revision of this document)

NOTE 2 See Latency Code Frequency Table for allowable frequency ranges for RL/WL/nWR/nRTP. (The next revision of this document should contain a Table for "Latency Code Frequency")

NOTE 3 After a MRW to set the Write Leveling Enable bit (OP[7]=1B), the LPDDR4-SDRAM device remains in the MRW state until another MRW command clears the bit (OP[7]=0B). No other commands are allowed until the Write Leveling Enable bit is cleared.

WR Lev WLS WL RL

RL

(Read latency)

Write-only

OP[2:0]

RL & nRTP for DBI-RD Disabled (MR3 OP[6]=0_B)

000_B: RL=6, nRTP = 8 (Default) 001_B: RL=10, nRTP = 8 010_B: RL=14, nRTP = 8 011_B: RL=20, nRTP = 8 100_B: RL=24, nRTP = 10 101_B: RL=28, nRTP = 12 110_B: RL=32, nRTP = 14 111_B: RL=36, nRTP = 16

RL & nRTP for DBI-RD Enabled (MR3 OP[6]=1_B)

000_B: RL=6, nRTP = 8 001_B: RL=12, nRTP = 8 010_B: RL=16, nRTP = 8 011_B: RL=22, nRTP = 8 100_B: RL=28, nRTP = 10 101_B: RL=32, nRTP = 12 110_B: RL=36, nRTP = 14 111_B: RL=40, nRTP = 16 1,3,4 WL

(Write latency) OP[5:3]

WL Set "A” (MR2 OP[6]=0_B)

000_B: WL=4 (Default) 001_B: WL=6 010_B: WL=8 011_B: WL=10 100_B: WL=12 101_B: WL=14 110_B: WL=16 111_B: WL=18 WL Set "B" (MR2 OP[6]=1_B) 000_B: WL=4 001_B: WL=8 010_B: WL=12 011_B: WL=18 100_B: WL=22 101_B: WL=26 110_B: WL=30 111_B: WL=34 1,3,4 WLS

(Write Latency Set) OP[6]

0_B: WL Set "A" (default)

1_B: WL Set "B" 1,3,4

WR LEV

(Write Leveling) OP[7]

0_B: Disabled (default)

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NOTE 1 All values are "typical". The actual value after calibration will be within the specified tolerance for a given voltage and temperature. Re-calibration may be required as voltage and temperature vary.

NOTE 4 PU-CAL setting is required as the same value for both Ch.A and Ch.B before issuing ZQ Cal start command. NOTE 5 Refer to the supplier data sheet for vender specific function. 1.5*tCK apply > 1.6GHz clock.

NOTE 6 If MR3 OP[2] is set to 1b then PPR protection mode is enabled. The PPR Protection bit is a sticky bit and can only be set to 0b by a power on reset.

NOTE 7 MR4 OP[4] controls entry to PPR Mode. If PPR protection is enabled then DRAM will not allow writing of 1 to MR4 OP[4].

DBI-WR DBI-RD PDDS PPRP WR PST PU-CAL

PU-Cal

(Pull-up Calibration Point)

Write-only OP[0] 0₁B: VDDQ/2.5 B: VDDQ/3 (default) 1,4 WR PST(WR Post-Amble Length) OP[1] 0B: WR Post-amble = 0.5*tCK (default) 1_B: WR Post-amble = 1.5*tCK(Vendor specific function)

2,3,5

Post Package Repair

Protection OP[2]

0B: PPR protection disabled (default)

1B: PPR protection enabled 6

PDDS

(Pull-Down Drive Strength) OP[5:3]

000_B: RFU 001_B: RZQ/1 010_B: RZQ/2 011_B: RZQ/3 100_B: RZQ/4 101_B: RZQ/5 110_B: RZQ/6 (default) 111_B: Reserved 1,2,3 DBI-RD

(DBI-Read Enable) OP[6]

1_B: Enabled 2,3

DBI-WR

(DBI-Write Enable) OP[7]

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NOTE 1 The refresh rate for each MR4-OP[2:0] setting applies to tREFI, tREFIpb, and tREFW. OP[2:0]=011_B corresponds to a

device temperature of 85°C. Other values require either a longer (2x, 4x) refresh interval at lower temperatures, or a shorter (0.5x,

0.25x) refresh interval at higher temperatures. If OP[2]=1_B, the device temperature is greater than 85 °C.

NOTE 2 At higher temperatures (>85 °C), AC timing derating may be required. If derating is required the LPDDR4-SDRAM will set

OP[2:0]=110_B. See derating timing requirements in 10.3, Table 90.

NOTE 3 DRAM vendors may or may not report all of the possible settings over the operating temperature range of the device. Each vendor guarantees that their device will work at any temperature within the range using the refresh interval requested by their device.

NOTE 4 The device may not operate properly when OP[2:0]=000_B or 111_B.

NOTE 5 Post-package repair can be entered or exited by writing to OP[4].

NOTE 6 When OP[7]=1, the refresh rate reported in OP[2:0] has changed since the last MR4 read. A mode register read from MR4 will reset OP[7] to '0'.

NOTE 7 OP[7]=0 at power-up. OP[2:0] bits are undefined at power-up.

NOTE 8 See the 4.30, Temperature Sensor for information on the recommended frequency of reading MR4.

NOTE 9 OP[6:3] bits that can be written in this register. All other bits will be ignored by the DRAM during a MRW to this register. NOTE 10 Refer to the supplier data sheet for vender specific function.

NOTE 11 Self refresh abort feature is available for higher density devices starting with 12Gb device.

TUF Thermal Offset PPRE SR Abort Refresh Rate

Refresh Rate Read OP[2:0]

000B: SDRAM Low temperature operating limit exceeded 001_B: 4x refresh

010_B: 2x refresh

011_B: 1x refresh (default) 100_B: 0.5x refresh

101_B: 0.25x refresh, no derating 110_B: 0.25x refresh, with derating 111_B: SDRAM High temperature operating limit exceeded

1,2,3,4 7,8,9

SR Abort (Self Refresh Abort) Write OP[3] 0₁B: Disable (default)

B: Enable 9,11

PPRE

(Post-package repair entry/exit)

Write OP[4] 0₁B: Exit PPR mode (default)

B: Enter PPR mode 5,9

Thermal Offset

(Vender Specific Function) Write OP[6:5]

00_B: No offset, 0~5°C gradient (default) 01_B: 5°C offset, 5~10°C gradient 10_B: 10°C offset, 10~15°C gradient 11_B: Reserved

10

TUF

(Temperature Update Flag) Read OP[7]

0_B: No change in OP[2:0] since last MR4 read (default)

1_B: Change in OP[2:0] since last MR4 read

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NOTE 1 MR6 is vendor specific.

3.4.8 MR7 Register Information (MA[7:0] = 07_H)

NOTE 1 MR7 is vendor specific.

LPDDR4 Manufacturer ID

LPDDR4 Manufacturer ID Read-only OP[7:0] See JEP166, LPDDR4 Manufacturer ID Codes

Revision ID-1

LPDDR4 Revision ID-1 Read-only OP[7:0] 00000000_00000001B: A-version

B: B-version 1

Revision ID-2

Function Register_Type Operan_d Data Notes

LPDDR4 Revision ID-2 Read-only OP[7:0] 00000000_00000001B: A-version

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3.4.10 MR9 Register Information (MA[7:0] = 09_H)

NOTE 1 Only 00_H should be written to this register.

3.4.11 MR10 Register Information (MA[7:0] = 0AH)

NOTE 1 See Table 51, ZQCal Timing Parameters for calibration latency and timing.

NOTE 2 If the ZQ-pin is connected to V_DDQ through R_ZQ, either the ZQ calibration function or default calibration (via ZQ-Reset) is supported. If the ZQ-pin is connected to VSS, the device operates with default calibration, and ZQ calibration commands are ignored. In both cases, the ZQ connection shall not change after power is applied to the device.

IO Width Density Type

Type

Read-only

OP[1:0] 00B: S16 SDRAM (16n pre-fetch) All Others: Reserved

Density OP[5:2]

0000_B: 4Gb per die (2Gb per channel) 0001_B: 6Gb per die (3Gb per channel) 0010_B: 8Gb per die (4Gb per channel) 0011_B: 12Gb per die (6Gb per channel) 0100_B: 16Gb per die (8Gb per channel) 0101_B: 24Gb per die (12Gb per channel) 0110_B: 32Gb per die (16Gb per channel) All Others: Reserved

IO Width OP[7:6] 00B: x16 (per channel) All Others: Reserved

Vendor Specific Test Register

RFU ZQ-Reset

ZQ-Reset Write-only OP[0] 0₁B: Normal Operation (Default)

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3.4.12 MR11 Register Information (MA[7:0] = 0B_H)

NOTE 1 All values are "typical". The actual value after calibration will be within the specified tolerance for a given voltage and temperature. Re-calibration may be required as voltage and temperature vary.

RFU CA ODT RFU DQ ODT

Function Register_Type Operan_d Data Notes

DQ ODT

(DQ Bus Receiver On-Die-Termination) Write-only OP[2:0] 000_B: Disable (Default) 001_B: RZQ/1 010_B: RZQ/2 011_B: RZQ/3 100_B: RZQ/4 101_B: RZQ/5 110_B: RZQ/6 111_B: RFU 1,2,3 CA ODT

(CA Bus Receiver On-Die-Termination) OP[6:4] 000_B: Disable (Default) 001_B: RZQ/1 010_B: RZQ/2 011_B: RZQ/3 100_B: RZQ/4 101_B: RZQ/5 110_B: RZQ/6 111_B: RFU 1,2,3

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3.4.13 MR12 Register Information (MA[7:0] = 0CH)

NOTE 1 This register controls the VREF(ca) levels for Frequency-Set-Point[1:0]. Values from either VR(ca)[0] or VR(ca)[1] may be selected by setting OP[6] appropriately.

NOTE 2 A read to this register places the contents of OP[7:0] on DQ[7:0]. Any RFU bits and unused DQ's shall be set to '0'. See 4.16, MRR Operation.

NOTE 3 A write to OP[5:0] sets the internal V_REF(ca) level for FSP[0] when MR13 OP[6]=0_B, or sets FSP[1] when MR13 OP[6]=1_B. The time required for V_REF(ca) to reach the set level depends on the step size from the current level to the new level. See 4.19, V_REF(ca) training for more information.

NOTE 4 A write to OP[6] switches the LPDDR4-SDRAM between two internal V_REF(ca) ranges. The range (Range[0] or Range[1]) must be selected when setting the V_REF(ca) register. The value, once set, will be retained until overwrit-ten, or until the next power-on or RESET event.

RFU VR-CA VREF(ca)

VREF(ca)

(V_REF(ca) Setting) _Read/

Write

OP[5:0]

000000B:

Thru

--110010_B: See Table 12

All Others: Reserved

1,2,3, 5,6 VR-CA

(VREF(ca) Range) OP[6]

0B: VREF(ca) Range[0] enabled

1_B: V_REF(ca) Range[1] enabled (default)

1,2,4, 5,6

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3.4.13 MR12 Register Information (MA[7:0] = 0CH) (cont’d)

Table 12 — V_REF Settings for Range[0] and Range[1]

NOTE 1 These values may be used for MR12 OP[5:0] to set the VREF(ca) levels in the LPDDR4-SDRAM. NOTE 2 The range may be selected in the MR12 register by setting OP[6] appropriately.

NOTE 3 The MR12 registers represents either FSP[0] or FSP[1]. Two frequency-set-points each for CA and DQ are provided to allow for faster switching between terminated and un-terminated operation, or between different high-fre-quency setting which may use different terminations values.

Function Operand Range[0] Values (% of V_DD2) Range[1] Values (% of V_DD2) Notes

VREF Settings for MR12 OP[5:0] 000000_B: 10.0% 011010_B: 20.4% 000000B: 22.0% 011010_B: 32.4% 1,2,3 000001_B: 10.4% 011011_B: 20.8% 000001B: 22.4% 011011_B: 32.8% 000010_B: 10.8% 011100_B: 21.2% 000010_B: 22.8% 011100_B: 33.2% 000011B: 11.2% 011101B: 21.6% 000011B: 23.2% 011101B: 33.6% 000100_B: 11.6% 011110_B: 22.0% 000100_B: 23.6% 011110_B: 34.0% 000101_B: 12.0% 011111_B: 22.4% 000101_B: 24.0% 011111_B: 34.4% 000110_B: 12.4% 100000_B: 22.8% 000110_B: 24.4% 100000_B: 34.8% 000111_B: 12.8% 100001_B: 23.2% 000111_B: 24.8% 100001_B: 35.2% 001000_B: 13.2% 100010_B: 23.6% 001000_B: 25.2% 100010_B: 35.6% 001001_B: 13.6% 100011_B: 24.0% 001001_B: 25.6% 100011_B: 36.0% 001010_B: 14.0% 100100_B: 24.4% 001010_B: 26.0% 100100_B: 36.4% 001011B: 14.4% 100101B: 24.8% 001011B: 26.4% 100101B: 36.8% 001100_B: 14.8% 100110_B: 25.2% 001100_B: 26.8% 100110_B: 37.2% 001101_B: 15.2% 100111_B: 25.6% 001101_B: 27.2% (Default) 100111_B: 37.6% 001110_B: 15.6% 101000_B: 26.0% 001110_B: 27.6% 101000_B: 38.0% 001111_B: 16.0% 101001_B: 26.4% 001111_B: 28.0% 101001_B: 38.4% 010000_B: 16.4% 101010_B: 26.8% 010000_B: 28.4% 101010_B: 38.8% 010001_B: 16.8% 101011_B: 27.2% 010001_B: 28.8% 101011_B: 39.2% 010010_B: 17.2% 101100_B: 27.6% 010010_B: 29.2% 101100_B: 39.6% 010011B: 17.6% 101101B: 28.0% 010011B: 29.6% 101101B: 40.0% 010100_B: 18.0% 101110_B: 28.4% 010100_B: 30.0% 101110_B: 40.4% 010101_B: 18.4% 101111_B: 28.8% 010101_B: 30.4% 101111_B: 40.8% 010110_B: 18.8% 110000_B: 29.2% 010110_B: 30.8% 110000_B: 41.2% 010111_B: 19.2% 110001_B: 29.6% 010111_B: 31.2% 110001_B: 41.6% 011000_B: 19.6% 110010_B: 30.0% 011000_B: 31.6% 110010_B: 42.0% 011001_B: 20.0% All Others: Reserved 011001B: 32.0% All Others: Reserved

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3.4.14 MR13 Register Information (MA [7:0] = 0DH)

NOTE 1 A write to set OP[0]=1 causes the LPDDR4-SDRAM to enter the Command Bus Training mode. When OP[0]=1 and CKE goes LOW, commands are ignored and the contents of CA[5:0] are mapped to the DQ bus. CKE must be brought HIGH before doing a MRW to clear this bit (OP[0]=0) and return to normal operation. See 4.21, Command Bus Training, for more information.

NOTE 2 When set, the LPDDR4-SDRAM will output the VREF(ca) and VREF(dq) voltages on DQ pins. Only the “active” frequency-set-point, as defined by MR13 OP[7], will be output on the DQ pins. This function allows an external test system to measure the internal V_REF levels. The DQ pins used for V_REF output are vendor specific.

NOTE 3 When OP[3]=1, the VREF circuit uses a high-current mode to improve VREF settling time.

NOTE 4 MR13 OP4 RRO bit is valid only when MR0 OP0 = 1. For LPDDR4 devices with MR0 OP0 = 0, MR4 OP[2:0] bits are not dependent on MR13 OP4.

NOTE 5 When OP[4] = 0, only 001b and 010b in MR4 OP[2:0] are disabled. LPDDR4 devices must report 011b instead of 001b or 010b in this case. Controller should follow the refresh mode reported by MR4 OP[2:0], regardless of RRO setting. TCSR function does not depend on RRO setting.

NOTE 6 When enabled (OP[5]=0B) data masking is enabled for the device. When disabled (OP[5]=1B), masked write command is illegal. See 4.10, LPDDR4 Data Mask (DM) and Data Bus Inversion (DBIdc) Function.

NOTE 7 FSP-WR determines which frequency-set-point registers are accessed with MRW commands for the following functions: VREF(CA) Setting, VREF(CA) Range, VREF(DQ) Setting, VREF(DQ) Range, CA ODT Enable, CA ODT value, DQ ODT Enable, DQ ODT value, DQ Calibration Point, WL, RL, nWR, Read and Write Preamble, Read postamble, and DBI Enables.

NOTE 8 FSP-OP determines which frequency-set-point register values are currently used to specify device operation for the following functions: VREF(CA) Setting, VREF(CA) Range, VREF(DQ) Setting, VREF(DQ) Range, CA ODT Enable, CA ODT value, DQ ODT Enable, DQ ODT value, DQ Calibration Point, WL, RL, nWR, Read and Write Preamble, Read postamble, and DBI Enables.

FSP-OP FSP-WR DMD RFU VRCG VRO RPT CBT

CBT

(Command Bus Training)

Write-only

OP[0] 0₁B: Normal Operation (default)

B: Command Bus Training Mode Enabled 1 RPT

(Read Preamble Training Mode)

OP[1] 0₁B : Disable (default) B : Enable

VRO

(V_REF Output) OP[2]

0_B: Normal operation (default)

1_B: Output the V_REF(ca) and V_REF(dq) values on DQ bits

2

VRCG

(VREF Current Generator) OP[3]

0_B: Normal Operation (default)

1_B: V_REF Fast Response (high current) mode 3 RRO

Refresh rate option OP[4]

0B: Disable codes 001 and 010 in MR4 OP[2:0]

1B: Enable all codes in MR4 OP[2:0] 4, 5 DMD

(Data Mask Disable) OP[5]

0_B: Data Mask Operation Enabled (default)

1_B: Data Mask Operation Disabled 6 FSP-WR

(Frequency Set Point Write Enable)

OP[6] 0B: Frequency-Set-Point[0] (default)

1B: Frequency-Set-Point [1] 7 FSP-OP

(Frequency Set Point Operation Mode)

OP[7] 0₁B: Frequency-Set-Point[0] (default)

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3.4.15 MR14 Register Information (MA[7:0] = 0EH)

NOTE 1 This register controls the V_REF(dq) levels for Frequency-Set-Point[1:0]. Values from either VR(dq)[0] or VR(dq)[1] may be selected by setting OP[6] appropriately.

NOTE 2 A read (MRR) to this register places the contents of OP[7:0] on DQ[7:0]. Any RFU bits and unused DQ's shall be set to‘0’. See 4.16, MRR Operation.

NOTE 3 A write to OP[5:0] sets the internal V_REF(dq) level for FSP[0] when MR13 OP[6]=0B, or sets FSP[1] when MR13 OP[6]=1B. The time required for V_REF(dq) to reach the set level depends on the step size from the current level to the new level. See 4.20, VREF(dq) training for more information.

NOTE 4 A write to OP[6] switches the LPDDR4-SDRAM between two internal V_REF(dq) ranges. The range (Range[0] or Range[1]) must be selected when setting the V_REF(dq) register. The value, once set, will be retained until

overwritten, or until the next power-on or RESET event.

RFU VR(dq) VREF(dq)

V_REF(dq)

(V_REF(dq) Setting) _Read/ Write

OP[5:0]

000000_B: Thru

--110010_B: See Table 13 All Others: Reserved

1,2,3, 5,6

VR(dq)

(VREF(dq) Range) OP[6]

0B: VREF(dq) Range[0] enabled

1_B: V_REF(dq) Range[1] enabled (default)

1,2,4, 5,6