Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V

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SMC4931M

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ABSOLUTE MAXIMUM RATINGS

(TA = 25°C Unless otherwise noted )

Symbol Parameter Rating Units

VDSS Drain-Source Voltage -30 V

VGSS Gate-Source Voltage ±20 V

ID Continuous Drain Current TA=25°C -7 A

TA=70°C -5.6 A

IDM Pulsed Drain Current A _-28 _A

IAS Avalanche Current A _-25 _A

EAS Single Pulse Avalanche energy L=0.1mH AE ₃₁ _mJ

PD Power Dissipation B TA=25°C 2 W

TA=70°C 1.3 W

TJ Operation Junction Temperature -55/150 °C

TSTG Storage Temperature Range -55/150 °C

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THERMAL RESISTANCE

Symbol Parameter Typ Max Units

RθJA Thermal Resistance Junction to Ambient

B _t≦10s ₆₂

°C/W Thermal Resistance Junction to Ambient BC _Steady-State ₁₀₀

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DESCRIPTION

SMC4931 is the Dual P-Channel enhancement mode power field effect transistors are using

trench DMOS technology.This advanced

technology has been especially tailored to minimize on-state resistance.This device is ideal for load switch applications.

■PART NUMBER INFORMATION

Dual P-Channel MOSFET

SMC 4931 M - TR G

a b c d e

a : Company name. b : Product Serial number.

c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant

■FEATURES

V

DS

= -30V, I

D

= -7A

RDS(ON)=20mΩ(Typ.)@VGS=-10V

RDS(ON)=26mΩ(Typ.)@VGS=-4.5V

◆100% EAS Guarantee

◆High power and current handling capability

■APPLICATIONS

◆High Frequency Point-of-Load Synchronous

◆DC-DC Power System ◆Load Switch S1 D1 D1 G1 G2 S2 D2D2 SOP-8 S1 G1 D1 S2 G2 D2

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SMC4931M

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ELECTRICAL CHARACTERISTICS

(TA = 25°C Unless otherwise noted )

Symbol Parameter Condition Min Typ Max Unit

Static Parameters

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 V - VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.6 -2.5 V

IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA

IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V, TJ=25°C -1 μA VDS=-24V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-10V, ID=-7A

VGS=-4.5V, ID=-5.6A

20 26

25 32 mΩ Gfs Forward Transconductance VDS=-10V, ID=-7A 15.3 S Diode Characteristics

VSD Diode Forward Voltage D _{IS=-1A,VGS=0V} _-0.7 _-1 _V

IS Continuous Source Current -7 A

trr Reverse Recovery Time

IS=-7A, dl/dt=100A/μs 9 ns

Qrr Reverse Recovery Charge 3 nC

Dynamic and Switching Parameters Qg Total Gate Charge

VDS=-15V,VGS=-10V, ID=-7A

23.6 33 nC

Qg Total Gate Charge (4.5V) 11.5 16.1

Qgs Gate-Source Charge 4.2 5.9

Qgd Gate-Drain Charge 4.4 6.2

Ciss Input Capacitance

VDS=-15V,VGS=0V, f=1MHz

1280

pF

Coss Output Capacitance 175

Crss Reverse Transfer Capacitance 125

td(on) Turn-On Time VDD=-15V, VGEN=-10V, RG=3.3Ω, ID=-1A 6.1 12 nS tr 14 27 td(off) Turn-Off Time 34 65 tf 13.2 25

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

A. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C.

B. The value of RθJA is measured with the device mounted on 1in2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C).

C. TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. D. The data tested by pulsed , pulse width ≦ 300µS , duty cycle ≦ 2%.

E. The EAS data shows Max, tested and pulse width limited by TJ(MAX)=150°C (initial temperature TJ=25°C).

The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

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SMC4931M

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TYPICAL CHARACTERISTICS

0 5 10 15 20 25 30 0 1 2 3 4 5 -I D -Drain Curr en t(A)

-VDS-Drain Source Voltage(V)

Output Characteristics VGS=-4V VGS=-2.5V VGS=-3V VGS=-3.5V VGS=-4.5, -5,-6,-8,-10V 10 15 20 25 30 35 0 4 8 12 16 20 R D S(O N ) (m Ω) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V TA=25°C VGS=-10V 0 2 4 6 8 10 0 5 10 15 20 25 -V GS (V) Qg-Gate Charge(nC) Gate Charge VDS=-15V ID=-7A 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 Capa c itan c e(pF )

-VDS-Drain Source Voltage(V)

Capacitance Ciss Coss Crss 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 N o rm aliz ed T h re sh o ld Volt age TJ-Junction Temperature(°C)

Gate Threshold Voltage

0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 Pt o t-Po w er(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

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SMC4931M

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TYPICAL CHARACTERISTICS

0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 N o rm aliz ed T h re sh o ld Volt age TJ-Junction Temperature(°C)

Gate Threshold Voltage

0 1.5 3 4.5 6 7.5 25 50 75 100 125 150 -I D -Drain Curr en t(A) TJ-Case Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -I D (A )

Maximum Safe Operation Area

-VDSVoltage (V) 100µs 1s 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 N o rm aliz ed T ra n sie n t Th erm al Re sis ta n ce

Square Wave Pulse Duration(Sec) Thermal Transient Impedance

Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg -VGS Qgs V Charge

Gate Chrge Waveform

VGS VDS 10% 90% Td(on) Tr Td(off) Tf Ton Toff

Switching Time Waveform TA=25°C 1ms 10ms DC 100ms t1 t2 Duty Cycle, D=t1/t2

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SMC4931M

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SOP-8 PACKAGE DIMENSIONS

Symbol Dimensions In Millimeters Dimensions In Inches

Min. Max. Min. Max.

A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.040. 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.130 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270BSC. 0.050BSC. L 0.400 1.270 0.016 0.005 Ɵ 0° 8° 0° 8° 0.8mm 1. 75 mm 1.27mm 5.6m m