AUTOMOTIVE GRADE. 31 I T C = 100 C Continuous Drain Current, V 10V A I DM. 160 P C = 25 C Power Dissipation 45 Linear Derating Factor

AUIRFIZ44N

HEXFET ^® Power MOSFET

PD - 97767

AUTOMOTIVE GRADE

TO-220AB Full-Pak AUIRFIZ44N

G D S

Gate Drain Source

D S G

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

A

) is 25°C, unless otherwise specified.

Parameter Units

I

_D

@ T

_C

= 25°C Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V A

I

_DM

Pulsed Drain Current ch

P

_D

@T

_C

= 25°C Power Dissipation W

Linear Derating Factor W/°C

V

_GS

Gate-to-Source Voltage V

E

AS

Single Pulse Avalanche Energy (Thermally Limited)dh mJ

I

AR

Avalanche Current ch A

E

AR

Repetitive Avalanche Energy c mJ

dv/dt Peak Diode Recovery dv/dt eh V/ns

T

J

Operating Junction and

T

_STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

_JC

Junction-to-Case i ––– 3.3 °C/W

R

_JA

Junction-to-Ambient ––– 65

-55 to + 175

300 10 lbfyin (1.1Nym)

45 0.3 ± 20 Max.

31 22 160

5.0 4.5 210 25

HEXFET

^®

is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and rugge- dized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

l

Advanced Planar Technology

l

Low On-Resistance

l

Isolated Package

l

High Voltage Isolation = 2.5KVRMS …

l

Sink to Lead Creepage Distantce = 4.8mm

l

175°C Operating Temperature

l

Fully Avalanche Rated

l

Lead-Free, RoHS Compliant

l

Automotive Qualified*

V

(BR)DSS

55V

R

DS(on)

max. 24m

I

D

31A

AUIRFIZ44N

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

‚ V

_DD

= 25V, starting T

_J

= 25°C, L = 470µH R

G

= 25, I

AS

= 25A. (See Figure 12)

ƒ ^I

SD

 25A, di/dt  320A/µs, V

_DD

 V

_(BR)DSS

, T

J

 175°C.

„ Pulse width 300µs; duty cycle 2%.

… t=60s, ƒ=60Hz

† Uses IRFZ44N data and test conditions.

‡ ^R



is measured at Tj at approximately 90°C.

S D

G

S D

G

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 55 ––– ––– V

V

(BR)DSS

/T

J

Breakdown Voltage Temp. Coefficient ––– 0.055 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– ––– 24 m

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V

gfs Forward Transconductance 17 ––– ––– S

I

DSS

Drain-to-Source Leakage Current ––– ––– 25 μA ––– ––– 250 I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Dynamic Electrical Characteristics @ T

_J

= 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units

Q

g

Total Gate Charge ––– ––– 65

Q

gs

Gate-to-Source Charge ––– ––– 12 nC

Q

gd

Gate-to-Drain ("Miller") Charge ––– ––– 27

t

d(on)

Turn-On Delay Time ––– 7.3 –––

t

r

Rise Time ––– 69 –––

t

d(off)

Turn-Off Delay Time ––– 47 ––– ns

t

f

Fall Time ––– 60 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact

C

iss

Input Capacitance ––– 1300 –––

C

oss

Output Capacitance ––– 410 ––– pF

C

rss

Reverse Transfer Capacitance ––– 510 –––

C Drain to Sink Capacitance ––– 12 –––

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 31

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 160

(Body Diode)c

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

_rr

Reverse Recovery Time ––– 65 98 ns

Q

rr

Reverse Recovery Charge ––– 160 240 nC

t

on

Forward Turn-On Time

Intrins ic turn-on time is negligible (turn-on is dominated by LS+LD)

ƒ = 1.0MHz, See Fig. 5 h V

GS

= 20V

V

GS

= -20V

MOSFET symbol showing the integral reverse p-n junction diode.

V

DS

= 25V, I

D

= 25A h

I

D

= 25A V

DS

= 44V

Conditions R

D

= 1.1, See Fig. 10 fh

V

GS

= 0V

T

J

= 25°C, I

S

= 17A, V

GS

= 0V f T

_J

= 25°C, I

_F

= 25A

di/dt = 100A/μs f Conditions V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 1mA h V

GS

= 10V, I

D

= 17A f V

DS

= V

GS

, I

D

= 250μA

V

DS

= 55V, V

GS

= 0V

V

DS

= 44V, V

GS

= 0V, T

J

= 150°C

ƒ = 1.0MHz

Conditions

V

GS

= 10V, See Fig. 6&13 fh V

DD

= 28V

I

D

= 25A R

G

= 12

V

DS

= 25V

AUIRFIZ44N

† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

Qualification Information

^†

TO-220 Fullpak N/A

RoHS Compliant

Yes

ESD

Machine Model Class M2 (+/- 200V)

^††

AEC-Q101-002

Human Body Model Class H1B (+/- 1000V)

^††

AEC-Q101-001

Qualification Level

Automotive (per AEC-Q101)

Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.

Charged Device Model Class C5 (+/- 2000V)

^††

AEC-Q101-005

Moisture Sensitivity Level

AUIRFIZ44N

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1 10 100 1000

0.1 1 10 100

I , D rai n- to -S ou rc e C ur re nt ( A ) D

V , Drain-to-Source Voltage (V) DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

20μs PULSE WIDTH

T = 25°CC A

4.5V

1 10 100 1000

0.1 1 10 100

I , D ra in -to -S ou rc e C ur re nt (A ) D

V , Drain-to-Source Voltage (V) DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

A 4.5V

20μs PULSE WIDTH T = 175°CC

1 10 100 1000

4 5 6 7 8 9 10

T = 25°C_J

V , Gate-to-Source Voltage (V)

GS

D

I , Dra in -t o -So ur ce Cu rre nt (A)

A V = 25V

20μs PULSE WIDTH^DS T = 175°C_J

0.0 0.5 1.0 1.5 2.0 2.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

J

R , D ra in -to -S ou rc e O n R es is ta nc e

DS(on)

(N or m al iz ed )

V = 10V_GS A I = 41AD

T

_J

T

_J

AUIRFIZ44N

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode Forward Voltage

0 500 1000 1500 2000 2500

1 10 100

C , Ca pa ci ta nc e ( pF)

V , Drain-to-Source Voltage (V)

DS A V = 0V, f = 1MHz

C = C + C , C SHORTED C = C

C = C + C GS

iss gs gd ds rss gd

oss ds gd

C

_iss

C

oss

C

_rss

0 4 8 12 16 20

0 10 20 30 40 50 60 70

Q , Total Gate Charge (nC)

_G

V , G ate -to -S ou rc e V ol ta ge (V )

GS

A FOR TEST CIRCUIT SEE FIGURE 13 V = 44V

V = 28V^DS_DS I = 25AD

1 10 100 1000

0.5 1.0 1.5 2.0 2.5 3.0

T = 25°C_J

V = 0VGS

V , Source-to-Drain Voltage (V)

I , R ev ers e D ra in C urre nt (A )

SD

SD

A T = 175°C_J

1 10 100 1000

1 10 100

V , Drain-to-Source Voltage (V)

_DS

I , D ra in C u rr ent ( A )

OPERATION IN THIS AREA LIMITED BY R

D

DS(on)

10μs

100μs

1ms

10ms

A T = 25°C

T = 175°C Single Pulse

C J

AUIRFIZ44N

Fig 10a. Switching Time Test Circuit

V_DS 90%

10%

V_GS

t_d(on) t_r t_d(off) t_f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width µs Duty Factor 

R

D

V

GS

R

G

D.U.T.

10V

+-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

0 5 10 15 20 25 30 35

T , Case Temperature ( C)

I , Drain Current (A)

C

°

D

0.01 0.1 1 10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t 2. Peak T = P x Z + T

1 2

J DM thJC C

P

t t DM

1 2

t , Rectangular Pulse Duration (sec)

Ther m al Response (Z )

1

th JC

0.01 0.02 0.05 0.10 0.20 D = 0.50

SINGLE PULSE (THERMAL RESPONSE)

AUIRFIZ44N

D.U.T. V_DS

I_D I_G

3mA V_GS

.3F 50K

12V .2F

Current Regulator Same Type as D.U.T.

Current Sampling Resistors

+ - 0

100 200 300 400 500

25 50 75 100 125 150 175

J

E , S in gle P ul se A va la nc he E ne rg y (m J)

AS

I TOP 10A 18A BOTTOM 25A

A

Starting T , Junction Temperature (°C)

V = 25V

D

DD

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

Fig 13b. Gate Charge Test Circuit Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

V_DS L

D.U.T.

V_DD

I_AS

t_{p 0.01}

R_G +

-

t _p

V _DS

I _AS

V _DD V _(BR)DSS

10 V

Q _G Q _GS Q _GD V _G

Charge

10 V

Fig 13a. Basic Gate Charge Waveform

AUIRFIZ44N

P.W. Period

di/dt Diode Recovery

dv/dt

Ripple  5%

Body Diode Forward Drop Re-Applied

Voltage Reverse Recovery

Current Body Diode Forward

Current

V_GS=10V

V_DD

I_SD Driver Gate Drive

D.U.T. I_SDWaveform

D.U.T. V_DSWaveform

Inductor Curent

D = P.W.

Period

+ - +

+

+ - -

-

* V

GS

= 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

ƒ

‚ „

R

G

V

DD

dv/dt controlled by R

_G

Driver same type as D.U.T.

I

_SD

controlled by Duty Factor "D"

D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

 Low Stray Inductance Ground Plane

Low Leakage Inductance Current Transformer



*

AUIRFIZ44N

TO-220AB Full-Pak Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Full-Pak Part Marking Information

AUFIZ44N

YWWA

XX or XX

Date Code Y= Year

WW= Work Week A= Automotive, LeadFree Part Number

IR Logo

Lot Code

AUIRFIZ44N

Ordering Information

Base part number

Package Type Standard Pack Complete Part Number

Form Quantity

AUIRFIZ44N TO-220 Fullpak Tube 50 AUIRFIZ44N

AUIRFIZ44N

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the

“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.

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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/

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Tel: (310) 252-7105