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A Discussion about Defects Passivation and Etching Mechanisms in Polycrystalline Silicon Hydrogenated by MW-ECR Plasma

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Figure

Figure 1: Influence of microwave plasma power on open-circuit  voltage measured on the pc-Si n+pp+ mesa cells
Figure 4: Measured sheet resistance versus hydrogenation  hydrogenation time is 60 min, the MW plasma power is 650W temperature of n+pp+-type made on CVD pc- Si layers
Figure 6: Evolution of sheet resistance versus hydrogenation time  of n+pp+ polysilicon based cells

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