Accelerating the next technology revolution
Welcome & Introduction
Sitaram Arkalgud, PhD
Director – Interconnect
Temporary Bond Workshop – SEMICON West
July 11, 2011
Outline
•
SEMATECH Overview
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SEMATECH Assessment of key 3D detractors
•
Temporary Bond/Debond Background
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SEMATECH’s supplier landscape evaluation in 2010
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Assessment from SEMATECH Workshop at SEMICON
Taiwan (September 2010)
Scope of technical TSV program
Materials:
Liner, barrier, seed
Plating chemistry
Bond materials
Temporary, tack
Permanent
Equipment Development
Unit Process Development
TSV Module
Bond Module
Thin and handle
Backside processing
Metrology
Infrared
Acoustic
x-ray techniques
Standard techniques
Integration
Passive TSV daisy chains
TSV DtW daisy chains
Device interactions
65nm and 30 nm planar/non-planar
Keep out area
Thermo-mechanical modeling/simulation
Electrical modeling/simulation
Early reliability
0.00 0.05 0.10 0.15 0.20 0.25 0 10 20 30 40 50 60 70 Force , m Strain, mm Cu-Cu : Voids Cu-Cu : Void FreeSEMATECH 3D Program Organization
GF, HP, Hynix, IBM, Intel, Samsung, TSMC, UMC, CNSE
Unit Process
•
TSV Module
•
Thin
•
Bond
•
Metrology
Module Development
•
Baseline/Yield
•
Device Interaction
•
Reliability
•
Modeling/Simulation
•
Test Vehicles
Enablement Center
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Standards
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Metrology/Inspection
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Microbumping/bonding
Enablement Center Relationship to SEMATECH’s overall 3D Program
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3D Enablement Center members (non SEMATECH Members) leverage core
program reference flows, program tooling, test structures, etc.
•
No outflow of unit processes, equipment development, integration and early reliability
data to 3D Enablement Center
Atotech, Lasertec, NEXX, TEL
Chip – chip interoperability,
standards and specs for the
interface
Technology development
ADI, Altera, ASE, LSI, NIST, ON,
Qualcomm
SEMATECH’s role
•
Members can, through SEMATECH, orchestrate major industry-wide
technology transitions and minimize risk
–
EUV, 450 mm, 3D (standards and infrastructure), disruptive materials/
devices
•
SEMATECH is the only consortium focused on manufacturable
technology solutions and critical infrastructure
–
EUV mask infrastructure, metrology, 3D, III-V
•
SEMATECH’s R&D can complement members’ core development
activities to quickly narrow technology options
•
Members can benefit from cost sharing and significant government
(50%) leverage
Lack Of Industry-wide Readiness In
Critical 3D Areas
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HVM is unrealistic unless the gaps are addressed now
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Temporary bond/debond is a critical gap
•
As a neutral consortium, SEMATECH is in a position to play
a critical role in this transition
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This workshop
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Followup workshop at SEMICON Taiwan – September 9, Hsinchu
5x50 Via-mid Manufacturability
RIE liner barrier /seed (PVD) plate CMP handle wafer bond back grind TSV reveal handle wafer debondProcess performance (vs technical requirements) 1 1 2 1 1 1 1 1 2 1 ready
Repeatability, uniformity, process window 1 1 1 1 1 2 2 3 3 2 close but not quite
Tool availability / maturity 1 1 2 1 1 3 2 2 3 3 not ready
Throughput / cost of ownership 2 1 2 2 2 2 2 2 2
Manufacturability Readiness Key
Temporary bonding/debonding
•
Several options identified from tool and materials evaluations
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Thermal, solvent, laser debond ….
Materials Material Type Bond Mechanism Bonding Conditions Debond Mechanism Debond Temperature Carrier Equipment Supplier Material A not specified Thermal Reflow T = 160-190ºC F = 8kN t =1-3 min Thermal Slide Off T = 220ºC Standard Si or Glass Wafer A/B Material B Acrylic UV Cure T = 25ºC F = 8kN t not specified Laser Release T = 25ºC Larger Diameter Glass Wafer B/C Material C Silicone Thermal Cure T = 180ºC F = 8kN t not specified Mechanical Release (CVD Layer) T = 25ºC Standard Si or Glass Wafer B Material D not specified Thermal Reflow T = 175ºC F = 0.7 kN t = 50sec Solvent Release T = 25ºC Perforated Larger Diameter Glass Wafer D Material E Polyimide Thermal Cure T = 350ºC F = 5kN t =10 min All T = 250ºC (thermal slide-off) Debond Process Dependent A/B
Temporary bonding/debonding
•
Several options identified from tool and materials evaluations
–
Thermal, solvent, laser debond ….
•
No industry consensus observed on best options for temporary bond/debond (SEMATECH survey)
–
integration dependent
Closing temporary bonding gap would drive critical mass and accelerate 3D technology into HVM
Materials Material Type Bond Mechanism Bonding Conditions Debond Mechanism Debond Temperature Carrier Equipment Supplier Material A not specified Thermal Reflow T = 160-190ºC F = 8kN t =1-3 min Thermal Slide Off T = 220ºC Standard Si or Glass Wafer A/B Material B Acrylic UV Cure T = 25ºC F = 8kN t not specified Laser Release T = 25ºC Larger Diameter Glass Wafer B/C Material C Silicone Thermal Cure T = 180ºC F = 8kN t not specified Mechanical Release (CVD Layer) T = 25ºC Standard Si or Glass Wafer B Material D not specified Thermal Reflow T = 175ºC F = 0.7 kN t = 50sec Solvent Release T = 25ºC Perforated Larger Diameter Glass Wafer D Material E Polyimide Thermal Cure T = 350ºC F = 5kN t =10 min All T = 250ºC (thermal slide-off) Debond Process Dependent A/B 0 1 2 3 4 5 6 # r esp o n ses Num
Number of companies using each strategy for at least one integration product
L aser ab lat ab le T h er m o p last ic P eel ab le R T d e bo nd a bl e C h em ical ly re m o vab le S u pp or t r in g Ot h e r Un s u re , DK
