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(1)

Future Paths for Components

& Systems

Adrian M. Ionescu

Ecole Polytechnique Fédérale de Lausanne

ÉC O L E PO L Y T E C H N I Q U E FÉ DÉR A LE D E LA U S AN N E

(2)

Summary

• Introduction: invent the future!

• Binary switch as key element of electronic

computation & nano-CMOS vampire switch

• Future paths for components & systems:

– Other ultra-low power electronic switches

– Other materials: carbon electronics?

– Energy efficient computing: from min energy

switching to reversible computing & QCA

(3)

Introduction (1)

• “The best way to predict the future is to

invent it.” Alan Kay

• Possible barrier:

“We see things not as they

are but as we are.”

• Today nanolectronics = silicon technology

and CMOS, predictions for the future of

electronic components and systems are

heavily influenced by this reality.

(4)

Introduction (2)

• Natural analog computation

ƒ Flies acrobatically ƒ Recognizes patterns ƒ Navigates

ƒ Communicates

Consumes: 10

-15

J/op

• High-speed digital computation

(5)

Binary switch as key element of

electronic computation &

nano-CMOS vampire switch

(6)

Paradigm of information encoding

Konrad Zuse (1941) machine

– Use binary numbers to encode information

– Represent binary digits as on/off state of a current switch

Electromagnetic relay Vacuum tube Solid state transistors Integrated circuit Molecule? Spin? Other?

New approaches to representing information required.

Problems with shrinking the switch:

- Difficult to obtain good on/off ratio

(7)

Quasi-Ideal Nanoelectronic Switch

V

G

I

D

(log)

Ioff

Ion

Quasi-ideal: SS ~ 0 Ioff ~ 0 VT~0, VDDÆ0

• Quasi-ideal binary

switch, what matters:

- 2 stable states (off, on) - Ion: as high as possible - Ioff: as low as possible - Ion/Ioff > 105

- abrupt swing (mV/decade) - very fast (<ns)

A quasi-ideal nanoelectronic switch has ZERO standby power

(8)

What about nano-CMOS switch?

V

G

I

D

(log)

MOSFET switch: SS~60mV/dec @ RT

Ioff

Ion

Small swing switch

ideal

MOSFET is a vampire switch at nanoscale

• New Small Swing Switch = New physics

(9)

General: critical standby electricity

• Standby electricity is the energy consumed by appliances when they are not performing their main

functions or when they are switched off. Energy wasted: “standby loss”

or “vampire power”

• Modern electrical and electronic appliances, even those having

on/off switches, consume power for standby functions: standby loss in France is ~7% of the total

residential electricity consumption

US vampire power costs $3B/year!

(10)

Future paths for components &

systems

(11)

Steep swing switches = LSBP

• Other device physics than MOSFET, new

component-level architecture for low standby power:

– Tunneling devices

– Impact ionization devices – Electro-mechanical devices – Ferroelectric devices

– Other?

• Co-integrate with high-performace silicon CMOS

• Materials not limited to silicon (III-V’s, hetero, ferro)

• See program by DARPA: Steep-Subthreshold-slope

Transistors for Electronics with Extremely-Low

Power (STEEP):

(12)

Emerging Research Device

Technology Candidates Evaluated

• Determine which, if any, current approaches to providing a “Beyond CMOS” information processing technology(ies) is (are) ready for more detailed roadmapping and enhanced investment. (Jim Hutchby, ERD, ITRS)

• 7 technology candidates evaluated in July 2008:

– Nano-electro Mechanical Switches – Collective Spin Devices

– Spin Torque Transfer Devices

– Atomic Switch / Electrochemical Metallization – Carbon-based Nanoelectronics

– Single Electron Transistors

– CMOL / Field Programmable Nanowire Interconnects

(13)

Carbon Electronics: potential

Potential

ƒ Impact geometric scaling: alternate MOSFET structure ƒ Provide a high mobility, high carrier velocity, MOSFET channel replacement material.

ƒ Provide a technology platform enabling a new “Beyond CMOS” information processing paradigm

Carbon nanotubes

ƒ

exceptionally long mean free path & mobility > 50,000 cm2/Vsec at RT: ballistic FETs ~ 100 nm.

ƒ much lower capacitance of ~10 aF (for a diameter of CNT =1 nm, L = 10 nm).

Graphene

ambipolar carrier conduction by electrical field and a high mobility ~100,000 cm2/V.sec at RT (better than InSb).

(14)

Carbon Electronics: Control!

• Challenges for CNTs:

– Control: over the chirality and diameter of nanotubes (and the associated electronic bandgap)

– Densely packed arrays: of nanotubes to achieve

current levels comparable to silicon field-effect devices

• Challenges for graphene:

– Controlled growth: methods to synthesizing, growing, or depositing high quality graphene film on a suitable insulating substrates for further device processing

– Edge control: atomic precision of the physical and

chemical structures of the edges, otherwise the electron transport would be dominated by the edge disorder of graphene nanostructures

(15)

ITRS '97-'03 Gate Energy Trends 1.E-22 1.E-21 1.E-20 1.E-19 1.E-18 1.E-17 1.E-16 1.E-15 1.E-14 1995 2000 2005 2010 2015 2020 2025 2030 2035 2040 2045 CV V /2 en erg y , J

LP min gate energy, aJ HP min gate energy, aJ 100 k(300 K) ln(2) k(300 K) 1 eV k(300 K) 90 65 45 32 22 130 180 250

Room-temperature 100 kT reliability limit

One electron volt

Room-temperature von Neumann - Landauer limit

Room-temperature kT thermal energy

Practical limit for CMOS?

fJ aJ zJ Node numbers (nm DRAM hp) CV 2 /2 gate e n er gy , J oul es H isto ric al tre nd line Tre nd im plie d by IT RS t argets

Switching Energy @ Small Scale

• Trend of min Transistor Switching Energy

(16)

Transistors at molecular densities

Suppose in each clock cycle a single electron moves from power supply (1V) to ground.

Vdd

ITRS: 9nm gate length, 109 logic transistors/cm2 @ 3x1010 Hz for 2016

1011 devices/cm2 1012 devices/cm2 1013 devices/cm2 1014 devices/cm2 Frequency (Hz) 0.016 0.16 1.6 16 106 0.16 1.6 16 160 107 1.6 16 160 1600 108 16 160 1600 16,000 109 160 1,600 16,000 160,000 1010 1,600 16,000 160,000 1,600,000 1011 16,000 160,000 1,600,000 16,000,000 1012 1011 devices/cm2 1012 devices/cm2 1013 devices/cm2 1014 devices/cm2 Frequency (Hz) 0.016 0.16 1.6 16 106 0.16 1.6 16 160 107 1.6 16 160 1600 108 16 160 1600 16,000 109 160 1,600 16,000 160,000 1010 1,600 16,000 160,000 1,600,000 1011 16,000 160,000 1,600,000 16,000,000 1012

Power dissipation (Watts/cm2)

(17)

The von Neumann-Landauer (VNL)

bound & reversible computing

• To lose, obliviously erase, or otherwise irreversibly forget 1

bit’s worth of known information involves/requires the eventual

dissipation of at least kBT ln2 amount of free energy to an

environment at some temperature T.

• Reversible computing: A paradigm for digital information processing in which all (or most) of the digital operations performed (logic, communication, and storage) carry out

logically reversible (functionally invertible) transformations of the local digital state.

– don’t lose any logical information.

– VNL bound does not apply.

(18)

Minimum energy for computation

• Question: Is there a fundamental lower limit to the

amount of energy that must be dissipated to

compute a bit?

• Answer:

NO -- Landauer (1961)

• Bennett (1982): full computation can be done

without erasure.

(19)

Quantum Cellular Automata:

reversible/irreversible

Energy /E k kBT log(2) reversible irreversible

Direct time-dependent calculations with QCA logic shows that logically reversible circuit can dissipate less than kBT log(2).

(20)

Conclusion

• Possible future paths for Components &

Systems:

– Power & Performance: Low standby power by

steep swing switches on high-performance

CMOS platforms.

– Higher Performance: Carbon electronics.

– Long term dense computing: Energy efficient

computing. Reversible computing?

(21)

References

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