ALXGA1-XAS
A Study of Efficiency Dependence on Alloy Composition in an AlxGa1 xAs / AlxIn1 xAs Heterojunction Solar Cell: An Ultra Thin Film Approach
... Now, simulations were conducted by varying the value of x for the top layer alloy AlxGa1-xAs from 0.1 to 0.9, in steps of 0.1, and a plot of efficiency against x Aluminium mole fraction [r] ...
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Avalanche multiplication in AlxGa1-xAs (x=0to0.60)
... Increasing the alloy fraction causes the multiplication curves to be shifted to higher voltages such that the multiplication curves at any given thickness are practically parallel The ra[r] ...
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Remote impurity scattering in modulation doped GaAs/AlxGa1 xAs heterojunctions
... Given that the fluctuations due to the array of positive charges, which are affected only by the randomness in the impurity position, are considerably smaller than the fluctuations due t[r] ...
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TEMPERATURE AND FIELD DEPENDENT ELECTRICAL CONDUCTIVITY OF AlXGa1-XAs TERNARY ALLOY
... The investigation of the variation of electrical conductivity with electric field of the samples reveals that in the low field region (< 1,400 V/m), the conduction is ohmic while in[r] ...
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Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.
... 3-23 The spectra of the stimulated emission at the pumping power below and above the threshold for exciting the phonon assisted stimulated emission from the multiple quantum w[r] ...
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Effect of Multiplication Region Mole Fraction on Characteristics of Alxga1-Xas-Apds in the Linear and Geiger
... We have examined the mean gain, excess noise factor, breakdown prob- ability, breakdown voltage, and performance factor of homojunction APD when we considered the change of multiplicatio[r] ...
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Nonparabolic band effects in GaAs/AlxGa1 xAs quantum dots and ultrathin quantum wells
... This makes them ideally suited for the study of pure confinement effects.17 We have measured the effective exciton mass in such QDs and ultrathin QWs, and in both cases found values betw[r] ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... The carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations de[r] ...
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Thermal dissociation of free and acceptor-bound positive trions from magnetophotoluminescence studies of high quality GaAs/AlxGa1-xAs quantum wells
... At low temperatures the dominant dissociation results in a free hole and an exciton bound to a neutral acceptor in the spin-singlet or triplet state, whereas at higher temperatures the d[r] ...
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High field magnetoexcitons in unstrained GaAs/AlxGa1 xAs quantum dots
... The diamagnetic shift for the exciton ground state and the two first excited states in the presence of a magnetic field applied along x, y, and z direction in the QD are calculated.. A g[r] ...
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Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier
... CONCLUSION We demonstrated a 30 period p-GaAs/ AlxGa1-xAs heterojunction IR photodetector with a current blocking barrier, showing a photoresponse in mid-infrared spectral range.. By inc[r] ...
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High Mg effective incorporation in Al rich Alx Ga1 xN by periodic repetition of ultimate V/III ratio conditions
... Two Mg-doped AlxGa1 – xN x = 0.33, 0.54 films were grown by MOVPE using the conventional method the inset of Figure 1c to validate the prediction of the surface effect on Mg incorporatio[r] ...
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Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation
... For Ti/Al/Ni/Au Ohmic contact formation to high Al content barrier layers, fissures were found to offer conduction routes to the 2DEG that allow for low resistance contacts, with fissure[r] ...
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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers
... Epi-structure designed for our GaN high electron mobility transistors HEMTs with two graded Alx Ga1−x N strain-compensation transitional layers grown on 111 silicon.. Results and Discuss[r] ...
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Molecular beam epitaxy as a growth technique for achieving free standing zinc blende GaN and wurtzite AlxGa1 xN
... In this review we have discussed the growth of free-standing zincblende cubic and wurtzite hexagonal GaN and AlxGa1-xN layers by plasma assisted molecular beam epitaxy PA-MBE.. We have p[r] ...
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Enhanced magnetoelectric effect in M-type hexaferrites by Co substitution into trigonal bi-pyramidal sites
... the 2b and 12k positions respectively the situation changes [27,28], Fig.4b. The separation of the minima increases from 0.3 Å to 0.8 Å whilst the energy barrier increases from 2 to 120 meV. Wang et al [29] have also ...
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Recent XAS studies into Homogeneous metal catalyst in fine chemical and pharmaceutical syntheses
... using XAS alone is difficult, this can often be solved by complementary use of more traditional analytical tools such as UV/Vis, IR, NMR spectroscopy and mass ...
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Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... Intersubband absorption properties of high Al content AlxGa1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition He Hui Sun1*, Feng [r] ...
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Exciton confinement in strain engineered metamorphic InAs/InxGa1 xAs quantum dots
... The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In [r] ...
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Exciton confinement in strain engineered metamorphic InAs/InxGa1 xAs quantum dots
... The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In [r] ...
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