avalanche photodiodes (APDs)
Optimization of InGaAs/InAlAs Avalanche Photodiodes
... multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of ...
6
Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)
... In this paper we were rigorously analyzed the characteristics of homojunction avalanche photodiodes by considering the effect of dead space. We have shown that the characteristics of APDs are affected not ...
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GaAs/Al 0.8 Ga 0.2 As avalanche photodiodes for soft X-ray spectroscopy
... well-designed avalanche photodiodes (APDs). APDs provide avalanche gain, M, via the impact ionization process, in which an energetic electron (or a hole) gives up its energy to create another ...
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Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes
... Since avalanche gain and breakdown voltage in most semiconductor materials change with temperature, instruments utilizing Avalanche Photodiodes (APDs) for their avalanche gains need to ...
7
Laser annealing heals radiation damage in avalanche photodiodes
... Silicon avalanche photodiodes (APDs) are an appropriate choice for the single-photon detector on a satellite because of their low dark count rate, good sensitivity in - , nm wavelength range ...
16
Theoretical Analysis of InGaAs/InAlAs Single Photon Avalanche Photodiodes
... Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single- photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of ...
8
Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes
... Abstract— The effects of impact ionization in the InGaAs ab- sorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with ...
6
Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
... multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is ...on avalanche field was analyzed. We confirm that avalanche field and multiplication factor ( M n ) in ...
15
Numerical Analysis of Homojunction Gallium Arsenide Avalanche Photodiodes (GaAs -Apds)
... of avalanche photodiodes we use the nonlocalized ionization coefficient model (width independent ionization coefficient) were taken from [31] and HDMT introduce in the previous section to characterize the ...
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The effects of nonlocal impact ionization on the speed of avalanche photodiodes
... of avalanche photodiodes (APDs) provides increased sensitivity in the detection of weak op- tical ...the avalanche to build up and decay is prolonged in devices in which both electron and hole ...
6
Nonlocal effects in thin 4H-SiC UV avalanche photodiodes
... Abstract—The avalanche multiplication and excess noise char- acteristics of 4H-SiC avalanche photodiodes with -region widths of ...the photodiodes at unity gain were examined for wavelengths ...
10
Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes
... Modern avalanche photodiodes are complex semiconductor devices, hence designing process has to be sup- ported by extensive software simulation of electrical and optical properties [5] ...
6
Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes
... He was awarded a one-year Royal Society Exchange Fellowship at the Universita delle Scienze, Rome, Italy, and then lectured for a year in Mathematics at Imperial College, London, U.K.. In 1971, he moved to the Plessey ...
9
3D Camera Based on Gain-Modulated CMOS Avalanche Photodiodes
... linear-mode avalanche photodiodes as in-pixel demodulating ...modulation, avalanche photodiodes can combine op- tical sensing and light signal demodulation in a single ...the avalanche ...
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Modeling of Radiation Induced Damage and Thermal Effects on Avalanche Photodiodes Properties
... Optoelectronic components have become important elements in modern electronic systems due to the many intrinsic advantages of optical signal transfer, especially the large available bandwidths, high immunity to ...
12
Exponential time response in analogue and Geiger mode avalanche photodiodes
... an avalanche photodiode ...the avalanche region from ionization feedback processes delay the recovery of the diode, following optical excitation, to an ex- tent which increases with the ...The ...
9
Modeling of Avalanche Photodiodes Performance under Thermal and Radiation Effects
... Considering the continuous revolutions of optoelectronic and photonic components optical detectors with single photon sensitivity have been developed to achieve the highest per photon efficiency in an optical ...
12
InAs avalanche photodiodes as X-ray detectors
... We previously reported an InAs APD with an n-i-p structure for X-ray detection [17]. When cooled to 77 K, FWHM of the 5.9 keV peak reduced from 2.02 keV to 950 eV, as M increased from 1.58 to 5.3. This represented a ...
10
Impact ionisation in Al0 9Ga0 1As0 08Sb0 92 for Sb based avalanche photodiodes
... If the intrinsic width of a p-i-n APD is reduced tunnelling currents become increasingly significant, eventually dominating the total leakage current with deleterious effects on the signal to noise ratio. In comparison ...
11
Investigation of Novel Semiconductor Heterostructure Systems: I. Cerium Oxide/Silicon Heterostructures. II. 6.1 Å Semiconductor-Based Avalanche Photodiodes
... scribed in Chapter 7. It is seen in Fig. 8.2, that the four different structures had very different electrical characteristics. The superlattice has such a narrow effective bandgap (220meV) that one would expect breakdown ...
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