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highly mismatched semiconductor alloys

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

... Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or ...the alloys deviate ...

41

Intermixing studies in GaN 1−xSb x highly mismatched alloys

Intermixing studies in GaN 1−xSb x highly mismatched alloys

... The highly mismatched alloys (HMAs) consist of elements that have large differences in size and electronegativity, resulting in dramatic band structure changes even for dilute substitutions of one of ...

5

Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi

Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi

... a semiconductor system, which have similar characteristics like atomic size, ionicity, and electronegativity ...as highly mismatched alloys (HMAs) [10, 11] ...host semiconductor due to ...

17

Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

... band edge positions make HMAs promising materials for solar energy conversion devices. For example, the HMAs may be suitable photoelectrodes for photoelectrochemical solar water splitting. This application requires a ...

21

Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE

Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE

... Highly Mismatched Alloys (HMAs) are semiconductor alloys where the substitutional atoms have very different atomic radii and/or electronegativity ...Conventional semiconductor ...

7

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

... of semiconductor materials with unique electrical and optical ...synthesize highly mismatched alloys (HMAs) in the whole composition ...possible semiconductor materials whose electronic ...

5

Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys

Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys

... novel semiconductor materials, which will absorb pho- tons over the full solar energy ...so-called highly mismatched alloys ...For highly mismatched GaN 1x As ...

6

Highly mismatched GaN1-xSbx alloys : synthesis, structure and electronic properties

Highly mismatched GaN1-xSbx alloys : synthesis, structure and electronic properties

... for semiconductor materials now allows synthesis of semiconductor alloys of constituents whose component atoms are distinctly different in terms of size, ionicity and/or ...such highly ...

41

Intermixing studies in GaN1−xSbx highly mismatched alloys

Intermixing studies in GaN1−xSbx highly mismatched alloys

... The highly mismatched alloys (HMAs) consist of elements that have large differences in size and electronegativity, resulting in dramatic band structure changes even for dilute substitutions of one of ...

5

Optoelectrical properties of highly mismatched semiconductor materials

Optoelectrical properties of highly mismatched semiconductor materials

... III–antimonide alloys of gallium and indium have received much less at- tention, but show great promise for long-wavelength infrared applications due to their small intrinsic bandgaps which, with the incorporation ...

107

Effects of Zn additions to highly magnetoelastic FeGa alloys Thomas A. Lograsso

Effects of Zn additions to highly magnetoelastic FeGa alloys Thomas A. Lograsso

... magnetoelasticity and mechanical properties. They are rare-earth-free, can be processed using conventional deformation techniques, have high magnetic permeability, low hysteresis, and low magnetic saturation fields, ...

7

Corrosion fatigue initiation in stainless steels : The scanning reference electrode technique

Corrosion fatigue initiation in stainless steels : The scanning reference electrode technique

... The results obtained in the present study corroborate the limitations of the commercial equipment as shown in figure 4.38(a), which is an example of an area map scan performed on specimens at free corrosion potential ...

242

Optical absorption of dilute nitride alloys using self consistent Green’s function method

Optical absorption of dilute nitride alloys using self consistent Green’s function method

... GaNSb alloys fit well with experiments at the absorption edge [31], and predict the correct band gap in these ...GaNSb alloys studied are different from that for InGaNAs sam- ...

11

ALLOY BROADENING OF THE NEAR-GAP LUMINESCENCE AND THE NATURAL BAND OFFSET IN SEMICONDUCTOR ALLOYS

ALLOY BROADENING OF THE NEAR-GAP LUMINESCENCE AND THE NATURAL BAND OFFSET IN SEMICONDUCTOR ALLOYS

... Moreover, the chemical shift, causing departure of the acceptor binding energies from the predictions of the pure hydrogenic effective mass model, affects the effective Bo[r] ...

5

Highly Mismatched Molecules Resembling Recombination Intermediates Efficiently Transform Mismatch Repair Proficient Escherichia coli

Highly Mismatched Molecules Resembling Recombination Intermediates Efficiently Transform Mismatch Repair Proficient Escherichia coli

... Heteroduplex molecules with multiple mismatches ef- ficiently transform Mutf and Mut- strains: To assess the ability of MMR to act on a multiply mismatched recombi- nat[r] ...

10

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi₂Te₃

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi₂Te₃

... Heterostructured materials are the basis of metal–oxide–semiconductor transistor and data storage technologies. Besides the tremendous importance of multi-layered thin films for device applications, hetero- ...

5

Temperature dependence of the magnetostriction and magnetoelastic coupling in Fe100−xAlx (x = 14.1,16.6,21.5,26.3) and Fe50Co50

Temperature dependence of the magnetostriction and magnetoelastic coupling in Fe100−xAlx (x = 14.1,16.6,21.5,26.3) and Fe50Co50

... the alloys were first pro- cessed using the Bridgman method to produce large crystals of the high temperature fcc phase which in turn resulted into large bcc phases at room ...

6

Highly-photostable and mechanically flexible all-organic semiconductor lasers

Highly-photostable and mechanically flexible all-organic semiconductor lasers

... The operating lifetime under ambient conditions of mechanically-flexible organic semiconductor lasers based on monodisperse star-shaped oligofluorenes has been improved by using two approaches. A flexible organic ...

14

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

... Heterostructured materials are the basis of metal–oxide–semiconductor transistor and data storage technologies. Besides the tremendous importance of multi-layered thin fi lms for device applications, hetero- ...

6

Simple Spectrophotometric Method for the Determination of Copper in Some Real, Environmental, Biological, Food and Soil Samples Using Salicylaldehyde Benzoyl Hydrazone

Simple Spectrophotometric Method for the Determination of Copper in Some Real, Environmental, Biological, Food and Soil Samples Using Salicylaldehyde Benzoyl Hydrazone

... is highly selective for copper and was successfully used for the determination of copper in several standard reference materials (steels and alloys) as well as in some environmental waters (portable and ...

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