InGaAs:P, Be
Molecular beam epitaxy growth of peak wavelength controlled InGaAs/AlGaAs quantum wells for 4 3 μm mid wavelength infrared detection
... the InGaAs well finished for growing the whole AlGaAs ...the InGaAs well was grown, a thin 5-nm AlGaAs barrier was pre- deposited at the InGaAs growth temperature (500°C), and then the substrate ...
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High Wall Plug Efficiency 1060 nm High Power Semiconductor Laser
... in InGaAs in the active region cannot be too small, otherwise the thickness of InGaAs active layer will exceed the critical thick- ness, meanwhile the asymmetric large optical cavity can decrease the cavity ...
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An InGaAlAs-InGaAs two-color photodetector for ratio thermometry
... Current-voltage and capacitance-voltage measurements were performed using an HP4014 picoammeter and an HP4275 LCR meter, respectively. The spectral response of the two-color photodetector was measured using an iHR320 ...
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Integrated sensitive on chip ion field effect transistors based on wrinkled InGaAs nanomembranes
... The improved REBOLA technique uses small strained InGaAs membranes on mesa structures which allows for the exact on-chip placement of the nanochannels. In order to have an accurate and reproducible channel ...
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Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1 3–1 55 μm Window
... Such an effect for our samples turned out to be most notable in Fig. 2, where the I – V dependences at the dark and under illumination at different characteristic spec- tral points on bias voltage are shown, together ...
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Dynamic vibronic coupling in InGaAs quantum dots
... self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon ...
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Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
... used in the simulations and the results presented in Fig. 4. A constant etch depth of 9 µm is used in Fig. 4(a), and a ridge width of 10 µm used in Fig. 4(b). The results in the Fig. 4(a) agree with experimental ...
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Optimization of InGaAs/InAlAs Avalanche Photodiodes
... good multiplication layer material [3]. InAlAs has been demonstrated to be a good electron multiplication ma- terial for InGaAs separate absorption and multiplication avalanche photodiodes (SAM APDs) because of ...
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Chirped InGaAs quantum dot molecules for broadband applications
... Narrow- and broadband optoelectronic devices in the 0.9- to 1.55-μm range benefit greatly from self-assembled InGaAs quantum dots (QDs). The conflicting narrow and broad bandwidth requirements lead to different ...
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Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
... Compared to InAlAs-based APDs, researches of InP-based APDs are more comprehensive and in depth in theory and simulation. However, InAlAs- based APD is increasingly used in place of InP as it has a larger band gap that ...
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InGaAs APD thermometry
... the InGaAs APD for use within aperture limited instrumentation, we integrated the InGaAs APD, with its PCB, glare stop and filter, into a micro- electro-mechanical systems (MEMS) mirror scanning ...the ...
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Self Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
... the InGaAs/InP PL peak (∼ 50 meV) compared to the bare InGaAs ...the InGaAs core is coated with InP ...In-rich InGaAs nanowires with native oxide-covered surfaces, the sur- face Fermi level is ...
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Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications
... nanowires, P incorporation into the nanowire via VLS is different than the expected incorporation in thin film growth which indicates that a different kinetic approach has to be taken into account in understanding ...
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Theoretical Analysis of InGaAs/InAlAs Single Photon Avalanche Photodiodes
... structure InGaAs/InAlAs SPAD, which achieves a SPDE of 21% at 260 K ...of InGaAs/InAlAs SPADs are too high compared with InGaAs/InP SPADs (in recent InP SPADs, DCRs are typical < 10 4 Hz) ...in ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... of InGaAs QWSCs and SML QDSCs could be signi fi cantly enhanced by using a GaAsP strain-compensation layer, and hence the performance of InGaAs QWSCs and SML ...of InGaAs QWs. For InGaAs SML ...
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A Quantum Simulation Study of III-V Esaki Diodes and 2D Tunneling Field-Effect Transistors
... To offset this drawback, different material systems can be used, with material opti- mization required for the channel material, the gate stack, and their corresponding geometries. This study considers the novel idea of ...
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Results of the study on measurements of heavy metals concentrations in organs and tissues of livestock grazing on pastures around mining industry in gobi zone
... СУДАЛГААНЫ АЖЛЫН ХЭРЭГЛЭГДЭХҮҮН, АРГА ЗҮЙ Бид судалгаа, шинжилгээнийхээ ажлыг Дорноговь аймгийн Улаанбадрах, Зүүнбаян сумын нутаг дэвсгэрт ураны хайгуул, туршилтын олб[r] ...
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ТЭХИЙН ШЭЭГ 3 БЭЛДМЭЛИЙН ЭЛЭГ ХАМГААЛАХ ҮЙЛДЛИЙГ СУДАЛСАН ДҮН
... Хувилбар бүлгийн хулганы элэгний эдийн дээжийг Тэхийн шээг 3 бэлдмэлээр эмчилгээ хийснээс 7, 14, 21 хоногийн дараа харахад элэгний хэлтэнцрүүдэд үүссэн сөнөрөл, ү[r] ...
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НАНО ТОСОЛГООНЫ МАТЕРИАЛ АШИГЛАН ЭД АНГИЙН ЭЛЭГДЭЛ БУУРУУЛАХ ҮНДЭСЛЭЛ
... Хөдөлгүүрийн тосыг нэмэлт хольцгүй дангаар нь хэрэглэхэд холимог тосолгооны горимд ажиллаж байсан бөгөөд энгийн нэмэлт хольцтой тос нь мөн холимог тосолгооны горимд байг[r] ...
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ААЛЗНЫ ТОРНЫ НЯГТШИЛ БЭЛЧЭЭРИЙН УРГАМЛЫН ТӨЛӨВ БАЙДЛААС ХАМААРАХ НЬ
... хэмжээ ургамлын бүрхэцээс хэрхэн хамаарч байгааг хэмжилт хийсэн 20 талбайд үзэхэд хамаарал сул (p=0.12, df=18, p<0.0003) байна. Гэхдээ 50%-аас бага ургамлын бүрхэцтэй газруудад аалзны тор илрээгүй. ...
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