InGaN/GaN
Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure
... annealed InGaN/GaN quantum well structures with active layer emitting in the blue region were analysed by optical ...monolithic InGaN/GaN struc- ture due to the combination of the excitonic QW ...
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Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging
... High quality InGaN/GaN LEDs are key to future lighting technologies, promising considerable reduction in worldwide power consumption. Nanorod LED arrays offer additional advantages over the commonly used ...
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Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
... characterise the optical properties of the GaN/InGaN/GaN core-shell structures, shown in Figure 12(b). This technique measures the full emission spectrum from successive local- ised regions ...
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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... In order to settle the problems mentioned above, vari- ous growth techniques have been employed in striving for smooth morphology and sharp interfaces within the InGaN/GaN stack. Quantum barriers (QBs) ...
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Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
... field (HAADF) scanning transmission electron microscopy (STEM) and conventional transmission electron microscopy. HAADF-STEM provided undoubted evidence that V defects in the multiple QW have the thin six-walled structure ...
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Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
... green-emitting InGaN/GaN ...the InGaN/GaN MQW structures promoted by the post- growth treatments will be analysed and discussed and models for the recombination processes will be ...
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Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs
... The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in ...
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Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode
... however, InGaN LEDs suffer from an efficiency droop, 2-10 which limits their ...the GaN epilayers and the reduction of TD density, leading to efficiency ...of InGaN/GaN strain-relief layers, ...
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Emission Characteristics of InGaN/GaN Core Shell Nanorods Embedded in a 3D Light Emitting Diode
... line GaN NRs. The low-magnification STEM image in Fig. 2b shows that the InGaN/GaN MQWs were uni- formly coated on nonpolar 1 f 100 g m-plane sidewalls on the outside of the n-GaN ...
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Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
... axial InGaN/GaN nanotubes via a combination of displacement Talbot lithography (DTL) for patterning and inductively coupled plasma top-down ...axial InGaN/GaN nanotubes can be achieved via a ...
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Quantum well engineering in InGaN/GaN core-shell nanorod structures
... The advantages of fabricating InGaN/GaN QW-based LEDs in a core-shell structure compared to planar growth have been well discussed [1 – 3]. Attention is often drawn to advantages such as the increased ...
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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... of GaN bar- rier represents a compromise between the crystal quality of GaN and the In content in InGaN ...of GaN QB can result in poor crystal quality of MQWs [12, ...and GaN QB growth ...
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Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
... and a 200 nm thick n-doped GaN layer, a five- or ten-period InGaN/GaN structure was deposited with nominally 2.5 nm thick wells and 7.5 nm thick barriers. The peak emission from the MQW structure is ...
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Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... of InGaN/GaN multiple quantum wells (MQWs) grown by metal- organic vapor-phase epitaxy (MOVPE), epitaxial lateral overgrowth (ELO) on a patterned sapphire substrate was employed and the MQWs were ...
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Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
... conventional InGaN/GaN nanostructures under more adaptable conditions for industrial scalability, ...in InGaN/GaN MQWs with 35 keV N + ions, comparing the behavior with ...
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Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... high-quality GaN film on Si is the thermal expansion mismatch (56%) between GaN and Si, which introduced large tensile stress and cracks to the grown GaN films ...n-type GaN layer beneath MQW ...
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Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
... individual InGaN/GaN nanotube [white dashed line in ...The GaN near-band-edge (NBE) emission around ...the InGaN SQW emission extracted for various nanotubes are presented in ...The ...
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Short wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
... the GaN and InGaN layers influence the 405-nm reflectance transients during MQWs' ...the InGaN growth rate can also modulate the oscillation character of 405-nm re- flectance signal due to the change ...
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Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging
... containing InGaN/GaN QWs, although studies of directly grown nano-columnar structures have also been ...self-organized GaN/AlN quantum dots, 13 InAs quantum dots 14 and nanocolumnar GaN/AlGaN ...
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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved ...
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