Metal-assisted chemical etching
Sub 100 nm ordered silicon hole arrays by metal assisted chemical etching
... of metal catalysts using a mask without the use of conventional lithographic techniques and reported the fabrication of ordered silicon micro-hole arrays by metal- assisted chemical ...
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The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal assisted Chemical Etching
... use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of ...different etching processes are ...
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Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal assisted chemical etching and anisotropic chemical etching
... after metal-assisted chemical etching for 1 ...the etching rate of 6 μm min −1 was obtained at room temperature using a metal ...anisotropic etching of silicon, etch- ing ...
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Lithography free fabrication of silicon nanowire and nanohole arrays by metal assisted chemical etching
... as chemical and biological sensors ...apply metal-assisted chemical etching (MaCE) as a low-cost etching method ...noble metal film with arrays of holes is formed on a ...
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Metal assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning
... Ge by the catalytic effect. Note in Figure 5 that an n- type Ge surface is etched deeper than a p-type one in the entire pressing force range when a Pt-coated canti- lever was scanned in SOW. One explanation for this is ...
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Formation of silicon nanowire packed films from metallurgical grade silicon powder using a two step metal assisted chemical etching method
... though metal-assisted chemical etching (MACE) is a top-down technique, which is rapid, simple, and of low cost, it relies on noble metal nanoparticles acting as catalysts in ...
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Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
... paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask ...
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Optical assessment of silicon nanowire arrays fabricated by metal assisted chemical etching
... We succeeded in measuring the key optical properties of SiNW arrays that were prepared with metal-assisted chemical etching and separated from the substrates by peeling. The absorptance of a ...
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Gold thickness dependent Schottky barrier height for charge transfer in metal assisted chemical etching of silicon
... the metal-assisted chemical etching process results in large- area, vertically aligned SiNWs with a uniform diameter along the height ...the etching rate of Si, which might be caused ...
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Optical properties of silicon nanowire arrays formed by metal assisted chemical etching: evidences for light localization effect
... by metal-assisted chemical etching of c-Si in hydro- fluoric acid solutions demonstrate new possibilities for tailoring the physical properties of Si-based nanostruc- ...simple chemical ...
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Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.
... Recently, chemical synthesis of SiNWs has been utilized as a simple, efficient and low cost ...the chemical methods, metal-assisted chemical etching (MACE) has been introduced as ...
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Structure and Electrochemical Properties of Hierarchically Porous Silicon Film Prepared with the Combination of Magnetron Sputtering Deposition and Metal-Assisted Chemical Etching
... A novel hierarchically porous silicon film on Cu foil was fabricated by employing the combination of magnetron sputtering deposition and metal-assisted chemical etching technology. The ...
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Investigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications
... dry etching method. Etching process with inductively coupled plasma is the most common dry etching method; while electrochemical etching and metal-assisted chemical ...
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Au Capped GaAs Nanopillar Arrays Fabricated by Metal Assisted Chemical Etching
... In summary, we have demonstrated the fabrication of ordered GaAs nanopillar arrays on GaAs (100) sub- strates via Au-assisted chemical etching. Au nanodot arrays with hexagonal lattice patterns and ...
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Catalytic activity of noble metals for metal assisted chemical etching of silicon
... Metal-assisted chemical etching of silicon (Si) has attracted considerable attention as a new electroless method that can produce porous Si by immersing metal-modified Si in a ...
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Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal Assisted Chemical Etching
... techniques, metal-assisted chemical etching (MACE) stands out from an industrial viewpoint because of its simplicity, low cost, and flexibility [11, ...
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Semiconductor Nanofabrication via Metal-Assisted Chemical Etching: Ternary III-V Alloys and Alternative Catalysts
... here. Although the etch rate of InGaP could not be quantified here, the layer did not completely dissolve with prolonged etching after it was first exposed. The lateral extent of the I-MacEtch fabricated ...
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Fabrication and photocatalytic properties of silicon nanowires by metal assisted chemical etching: effect of H2O2 concentration
... the etching solution, we get 10%, 20%, and 30% SiNWs with different morphologies of high-density nanowire arrays, low-density nanowire arrays, and a chaotic por- ous nanostructure, ...
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Si nanowires by a single step metal assisted chemical etching process on lithographically defined areas: formation kinetics
... A comparative study on the formation kinetics of SiNW formation by MACE of non-patterned and lithographi- cally patterned Si surfaces showed that the etch rate of Si for SiNW formation is higher in the case of lithogra- ...
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Antireflective silicon nanostructures with hydrophobicity by metal assisted chemical etching for solar cell applications
... of metal in an aqueous solution composed of HF and an oxidant, has attracted great interest as a method for fabricating Si nanostructures for electronic and optoelec- tronic devices ...and etching profiles ...
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