p-type Schottky diodes
Junction investigation of graphene/silicon Schottky diodes
... performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting ...
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Utilization of Embedded Metal Nanostructures for Solar Cells
... of p-n heterojunction with embedded gold island film under ...of p-type base crystalline Si is embedded inside the depletion region with width ...a Schottky contact with the emitter ITO layer ...
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Electrically active defects in novel Group IV semiconductors
... surface p-type high-conductivity layer which is usually observed on as-deposited diamond films disappeared after chemical cleaning using a saturated solution of CrCh + H2SO4, but this exposure of the ...
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Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode
... ZnO/p-Si Schottky barrier diodes have been investigated with help of standard thermionic emission (TE) theory, Norde’s function and Cheung ...the diodes were measured under dark and at room ...
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Electrical Properties and Interface States of Rare Earth Metal Ytterbium Schottky Contacts to p Type InP
... using a rapid thermal annealing (RTA) system. 40 nm thick rare-earth metal Yb was deposited on the polished side of InP wafer with a diameter of 500 µm through a stainless-steel mask of circular dots using an e-beam ...
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Investigation of the Heat Absorption Capacity of Silicon Schottky and PN Junctions
... Over the past years, much effort has been put in TE materials research and progress has been made. However researchers like Brostow et al (2014) are of the opinion that significant increase in the performance of TE ...
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Fabrication and characterization of GaN based light emitting diodes without pre activation of p type GaN
... into p-type GaN layer dur- ing the annealing ...the p-type GaN layer ...and p-type GaN, which reduced the Schottky barrier height and resulted in forming good ohmic ...of ...
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Metal silicide/poly Si Schottky diodes for uncooled microbolometers
... However, we attribute all the above barriers to the Ni silicide/poly-Si interface. Our reasoning is as follows. The band structure of a polysilicon film is known to be spatially inhomogeneous: A strong potential relief is ...
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Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes
... According to Padovani and Stratton [9], there are three types of current transport mechanisms through the Schottky barrier. Thermionic emission (TE) which occurs when the majority carriers have enough energy to ...
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SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes
... characteristics. The extracted n values suggest that current transport is dominated by interface generation- recombination and/or barrier tunneling mechanisms. When changing SiC polytypes, the rectifying ratio of ...
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Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode
... the Schottky contact affected the evaluation of barrier height, Norde function evaluates the values even for high series ...the p-n junction (Kacha et ...
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High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination
... circular Schottky anode elec- trodes with diameter of 100 μm were fabricated on the front side by standard photolithographic patterning, evaporation of Ni/Au (30 nm/200 nm) stack, and ...
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Hydrogen doped thin film diamond: Properties and application for electronic devices
... to Schottky barrier heights that are insensitive to both the work function and the electronegativity of the metal used [Gildenblat, ...both Schottky (Al) and ohmic contacts (Au) can be realised on the ...
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Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature
... The accuracy of the model is validated by comparing the predictions of the model with actual switching energy measurements. Figure 11 shows the measured and calculated switching energy for the Schottky diode as a ...
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Multi Layer SnSe Nanoflake Field Effect Transistors with Low Resistance Au Ohmic Contacts
... We report p-type tin monoselenide (SnSe) single crystals, grown in double-sealed quartz ampoules using a modified Bridgman technique at 920 °C. X-ray powder diffraction (XRD) and energy dispersive X-ray ...
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Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes
... non-radiative recombination centers, 60 InGaN-based LEDs have high efficiency because the InN-GaN system is unstable to decomposition into In-rich, nano-sized InGaN precipitates that form in an InGaN matrix having a ...
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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs
... switching MOSFET has not been fully characterized and understood. The deployment of these 1.2 kV SiC power devices in hard-switched high temperature modules will require more understanding in the dependence of switching ...
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γ rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1 2%N
... Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90 - 290 K temperature range and 50-2000 kHz ...
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Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β Ga2O3 Thin Film
... thickness of 15 μm and electron concentration of 2 × 10 17 cm − 3 . As presented in Fig. 1d, e, the full width at half-maximum (FWHM) and root mean square (RMS) were estimated to be 51.9 arcsec and 0.19 nm, respect- ...
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Schottky Field Effect Transistors and Schottky CMOS Circuitry
... the p-type side, by about ...a p+ poly gate for the PFETs (which would have an n-type body region) and vice versa, for the approach taken in this study, the PFET body region is of a different ...
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