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Self-assembled quantum dots

Spin effects in InAs self assembled quantum dots

Spin effects in InAs self assembled quantum dots

... We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/ AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the ...

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Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots

Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots

... 5. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom Abstract We report a magneto-optical study of InAs-InGaAs-GaAs self-assembled quantum ...

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A Two Dimensional Electron Gas as a Sensitive Detector for Time Resolved Tunneling Measurements on Self Assembled Quantum Dots

A Two Dimensional Electron Gas as a Sensitive Detector for Time Resolved Tunneling Measurements on Self Assembled Quantum Dots

... of self-assembled quantum dots (QDs) in an inverted high electron mobility transistor (HEMT) structure is used as a detector for time-resolved tunneling ...

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In situ accurate control of 2D 3D transition parameters for growth of low density InAs/GaAs self assembled quantum dots

In situ accurate control of 2D 3D transition parameters for growth of low density InAs/GaAs self assembled quantum dots

... Mi-Feng Li * , Ying Yu, Ji-Fang He, Li-Juan Wang, Yan Zhu, Xiang-jun Shang, Hai-Qiao Ni and Zhi-Chuan Niu * Abstract A method to improve the growth repeatability of low-density InAs/GaAs self-assembled ...

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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

... Mi-Feng Li * , Ying Yu, Ji-Fang He, Li-Juan Wang, Yan Zhu, Xiang-jun Shang, Hai-Qiao Ni and Zhi-Chuan Niu * Abstract A method to improve the growth repeatability of low-density InAs/GaAs self-assembled ...

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Terahertz optical sideband emission in self-assembled quantum dots

Terahertz optical sideband emission in self-assembled quantum dots

... Sidebands are then emitted at a frequency of ω Sideband = ω NIR + nω THz, where n = ± 1,2,3, .. To achieve the generation of odd sidebands the inversion symmetry of the system must be broken either by the application of ...

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Analysis of the 3D distribution of stacked self assembled quantum dots by electron tomography

Analysis of the 3D distribution of stacked self assembled quantum dots by electron tomography

... The observed deviation from the growth direction of the stacking of QDs is caused by the elastic interactions with the buried dots and by chemical composition fluc- tuations [16,30]. However, other parameters such ...

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Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain

Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain

... E.A. Chekhovich 1 , M. Hopkinson 2 , M.S. Skolnick 1 & A.I. Tartakovskii 1 Interaction with nuclear spins leads to decoherence and information loss in solid-state electron-spin qubits. One particular, ineradicable source ...

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Electron and hole confinement in stacked self assembled InP quantum dots

Electron and hole confinement in stacked self assembled InP quantum dots

... of self-assembled InP quantum dots has al- ready been described ...the dots once they become coupled in a ...for quantum-mechanical coupling in stacked ...

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Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self Assembled Nanoholes

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self Assembled Nanoholes

... The local droplet etching of nanoholes in semiconductor surfaces represents a powerful new degree of freedom for the design of novel semiconductor heterostructures and devices. This method allows to tune the structural ...

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Red-Emitting III-Nitride Self-Assembled Quantum Dot Lasers.

Red-Emitting III-Nitride Self-Assembled Quantum Dot Lasers.

... InGaN/GaN self-assembled quantum dots has been ...blue-emitting quantum dots will allow for full color InGaN based displays and ...first quantum dot layers is useful for ...

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Molecular Dynamics Study on Mechanical Properties in the Structure of Self Assembled Quantum Dot

Molecular Dynamics Study on Mechanical Properties in the Structure of Self Assembled Quantum Dot

... Stress and strain in the structure of self-assembled quantum dots constructed in the Ge/Si(001) system is calculated by using molecular dynamics simulation. Pyramidal hut cluster composed of ...

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The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures

The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures

... of quantum dots were done by Rubin ...InAs self assembled quantum dots buried beneath a Au/GaAs ...InAs dots were grown on top of undoped GaAs buffer layer and covered ...

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Electron and hole storage in self-assembled InAs quantum dots

Electron and hole storage in self-assembled InAs quantum dots

... We present results on optically induced storage of electrons or holes in self-assembled InAs quantum dots (QDs). The measurements demonstrate that, following resonant photo-excitation of the ...

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Growth kinetics of MPS capped CdS quantum dots in self assembled thin films

Growth kinetics of MPS capped CdS quantum dots in self assembled thin films

... CdS quantum dots using 3-mercaptopropyltrimethoxysilane as capping ...CdS quantum dots were directly deposited on glass substrates by a spin-coating ...the quantum dots. Results ...

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Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate

Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate

... 2. Experimental The samples were fabricated using a magnetron sputtering system at sufficiently low deposition rate of 2.7x10 -2 nms -1 and varying experimental conditions: Chamber pressure 10 -2 Torr, Heater temperature ...

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Quantum box energies as a route to the ground state levels of self-assembled InAs pyramidal dots

Quantum box energies as a route to the ground state levels of self-assembled InAs pyramidal dots

... of self-assembled pyramidal quantum dots, that exploits the proportionality be- tween the solutions of the pyramid and those of a much simpler and more symmetrical structure: the ...

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Effect of an in situ thermal annealing on the structural properties of self assembled GaSb/GaAs quantum dots

Effect of an in situ thermal annealing on the structural properties of self assembled GaSb/GaAs quantum dots

... Indeed, in such procedures the sample is normally covered by a GaAs substrate to avoid damaging the surface. In this paper, we analyze a sample of GaSb/GaAs QDs where the annealing method used is much more subtle: ...

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Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields

Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields

... INTRODUCTION Self-assembled quantum dot 共 QD 兲 semiconductor nano- structures are currently attracting substantial interest due to their high potential for novel optoelectronic ...of ...

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Spectroscopy of size dependent many-particle effects in single self-assembled semiconductor quantum dots

Spectroscopy of size dependent many-particle effects in single self-assembled semiconductor quantum dots

... Different methods have been applied to obtain an approximate solution of this problem. Single particle states can be obtained from numerical k⋅p calculations, performed typically in an 8-band version, with the inclusion ...

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