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Ti-Au-GaAs:C

Metal nanoparticle enhanced photocurrent in GaAs photovoltaic structures with microtextured interfaces

Metal nanoparticle enhanced photocurrent in GaAs photovoltaic structures with microtextured interfaces

... Deposition of the noble metal (Au, Ag) nanoparticles on the semiconductor surface (interface) is known [1] as a perspective method for increasing the light absorption in semiconductor due to excitation of surface ...

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Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time

Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time

... self-assembled Au droplets on GaAs (100), (110), and (111) is systematically investigated through the variation of deposition amount (DA), annealing temperature (AT), and dwelling time ...of Au ...

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Large scale and uniform preparation of pure phase wurtzite GaAs NWs on non crystalline substrates

Large scale and uniform preparation of pure phase wurtzite GaAs NWs on non crystalline substrates

... grown GaAs NWs in detail, HRTEM images are obtained, and one typical NW is shown in Figure ...the GaAs NWs ...the Au and Ga constituents, with an atomic ratio approximating 1:1, and with neglectable ...

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Weak anti-localization and quantum oscillations of surface states in topological insulator Bi 2Se 2Te

Weak anti-localization and quantum oscillations of surface states in topological insulator Bi 2Se 2Te

... the Au nanoparticles under the As ambient at 500 ...the GaAs substrate, particular at high temperature (>500 C), the bounding of Ga atoms to the GaAs substrate becomes loose, leading to ...

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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

... general, Au col- loidal particles [10], aerosols, and/or thin films [11] can be used as catalysts to induce the epitaxial growth of nano- wires in various growth apparatus, including molecular beam epitaxy and ...

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From the nucleation of wiggling Au nanostructures to the dome shaped Au droplets on GaAs (111)A, (110), (100), and (111)B

From the nucleation of wiggling Au nanostructures to the dome shaped Au droplets on GaAs (111)A, (110), (100), and (111)B

... tiny Au clusters and wiggly Au nano- structures as shown in Figure 1c was clearly observed on various GaAs ...self-assembled Au droplets with fine uni- formity were successfully fabricated on ...

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Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

... the Ti-Au/n-GaAs Schottky diode were successfully ...the Ti- Au/n-GaAs p-i-n diode were analyzed using forward-bias I-V characteristics and the ideality factor of ...the ...

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Fabrication of self assembled Au droplets by the systematic variation of the deposition amount on various type B GaAs surfaces

Fabrication of self assembled Au droplets by the systematic variation of the deposition amount on various type B GaAs surfaces

... thin Au film during surface diffusion ...dense Au droplets of round dome shapes were synthe- sized with an AH of ...of Au droplets was increased by × ...self-assembled Au droplets was ...

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Effect of Au thickness on the evolution of self assembled Au droplets on GaAs (111)A and (100)

Effect of Au thickness on the evolution of self assembled Au droplets on GaAs (111)A and (100)

... self-assembled Au droplets, an atomic force microscope (AFM) was utilized for the characterization of surface morphology under the non-contact (tapping) mode with the AFM tips (NSC16/AIBS, ...

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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes

Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes

... Schottky diodes are the basic building component in many semiconductor devices (field effect transistors, solar cells, photodetectors, Gunn diodes, microwave diodes, etc...) and integrated circuits, hence the intense ...

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Au Capped GaAs Nanopillar Arrays Fabricated by Metal Assisted Chemical Etching

Au Capped GaAs Nanopillar Arrays Fabricated by Metal Assisted Chemical Etching

... ordered GaAs nanopillar arrays on GaAs (100) sub- strates via Au-assisted chemical ...etching. Au nanodot arrays with hexagonal lattice patterns and ordered periodicities of 100 nm were formed ...

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Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

... as Au, 11 Fe, 12 Pt, 13 Pd, 14 and Ga 15 have been used to catalyst nanowire ...catalysts, Au has been com- monly used to catalyze the growth of semiconductor nano- wires 9,17 and nanowire ...prepare ...

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Refinement of X ray Fluorescence Holography for Determination
of Local Atomic Environment

Refinement of X ray Fluorescence Holography for Determination of Local Atomic Environment

... an Au single crystal and Zn atoms doped in a GaAs wafer performed with these systems at the synchrotron radiation facility SPring-8 enables us to obtain high quality hologram data within a practical ...

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Self assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces

Self assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces

... of GaAs/MWCNTs/Ag system can be tuned by varying the diameter of MWCNTs, though the dependency mechanism of the tube diameter with optical response is still ...into GaAs/Ag system results in a blue shift in ...

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Effects of Cryo Treatment on Corrosion Behavior and Mechanical Properties of Laser Welded Commercial Pure Titanium

Effects of Cryo Treatment on Corrosion Behavior and Mechanical Properties of Laser Welded Commercial Pure Titanium

... equiaxed grains for Ti are in the range of 45 ­ 52 µm, and their sizes decrease to 23­43 µm after cryo-treatment (Figs. 3(a) and 3(b)). Due to the effects of the laser welding heat input, martensitic ...

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A decomposable silica-based antibacterial coating for percutaneous titanium implant

A decomposable silica-based antibacterial coating for percutaneous titanium implant

... diluting with 0, 1, or 4 mL of DMEM). Each of the described groups required six wells. After 3 days of incubation, the media in each well were removed and 100 μ L of fresh cul- ture medium was added to each well. To each ...

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Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

... [14]. The oxygen vacancies, which are positively charged, are accumulated (extracted) into (from) the top interface region upon negative (positive) bias. In the process of the current transition, the Schottky-like bar- ...

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Comparison among Mechanical Properties of Investment Cast c p  Ti, Ti 6Al 7Nb and Ti 15Mo 1Bi Alloys

Comparison among Mechanical Properties of Investment Cast c p Ti, Ti 6Al 7Nb and Ti 15Mo 1Bi Alloys

... similar. Ti-15Mo-1Bi has the highest surface microvickers hardness, while c.p. Ti has the ...c.p. Ti is much lower than the other two alloys which display similar ...Notably, Ti-15Mo-1Bi and ...

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Abstract: The stepwise hydrogenation of the C=C bond and C=O group of acrolein on Au 3

Abstract: The stepwise hydrogenation of the C=C bond and C=O group of acrolein on Au 3

... and C3-Au (2.59 Å) interaction. Note the corresponding C1-C2 bond length and C2-C3 bond length are equal and is close to the C-C bond length of ethane (1.55 Å) at the same level. This is ...

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Volume 2, Issue 3, March 2013 Page 393

Volume 2, Issue 3, March 2013 Page 393

... pages Ti which lin C (Ti) is the number of outbound links on page damping factor which can be set between 0 an So, first of all, we see that PageRank does not as a whole, but is determined for each ...

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