valence band
Valence band density of states and surface electron accumulation in epitaxial SnO2 films
... The valence band, lying within 0 and 10 eV, is dominated by O 2p orbitals for energies below 7 eV, and constructed equally of O 2p and Sn 5s orbitals at the underlying energy ...
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Valence band density of states and surface electron accumulation in epitaxial SnO2 films
... The valence band, lying within 0 and 10 eV, is dominated by O 2p orbitals for energies below 7 eV, and constructed equally of O 2p and Sn 5s orbitals at the underlying energy ...
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Comparative Study on the Effects of Surface Area, Conduction Band and Valence Band Positions on the Photocatalytic Activity of ZnO MxOy Heterostructures
... wide band gap ...the band gap of ZnO including intrinsic [6] [7] and extrinsic [8] [9] doping and coupling ZnO with other semiconductor ...of band tail, promote the extension of photonic absorption ...
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Valence Band Photoemission in La and Pr: Connections with the Ce Problem
... The Pr spectra show two features attributable to 4f-electron emission, one at 3.6 eV, in agreement with x-ray photoemission spectroscopy results, and a new feature at about 0.75-eV bindi[r] ...
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Excitons with anisotropic effective mass
... the valence band maximum and conduction band minimum are ellipsoidal in shape, yielding distinct longitudinal electron and hole effective masses m ...
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The Temperature Dependence of the Thermodynamic Density of States and Urbach Rule
... Based on these studies, we can conclude that the thermodynamic state density at elevated temperatures pene- trates into the band gap of the semiconductor. This gives an additional contribution to the tail states ...
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Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials
... The morphology and crystallite size of the materials were examined by using field emission scanning electron microscopy (FESEM, JEOL JSM-7600F). The elemental analysis was examined using Oxford INCA X-MAC 51 XMX 0021 ...
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Band structures of rare gas solids within the GW approximation
... of valence-band maximum 共⌫ 15v 兲 and conduction-band minimum states 共⌫ 1c 兲 , valence bandwidths, W v and band gaps, E g , were evaluated using several basis sets and results are given ...
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Investigation of Novel Semiconductor Heterostructure Systems: I. Cerium Oxide/Silicon Heterostructures. II. 6.1 Å Semiconductor-Based Avalanche Photodiodes
... a valence band offset of -150 meV relative to ...the valence band of the p-type material into the conduction band of the superlattice ...
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Valence Compounds versus Metals Synthesis, Characterization, and Electronic Structures of Cubic Ae4Pn3 Phases in the Systems Ae = Ca, Sr, Ba, Eu; Pn = As, Sb, Bi
... formed instead. Antimony is clearly a better anion former than is bismuth, and it does so in other products rather than generate vacancies in this lattice or an open valence band. The regular trends we note ...
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Growth and properties of GaSbBi alloys
... the band gap reduction predicted by the virtual crystal approxi- mation (VCA) (that is, linear variation of the band gap between the two zinc-blende binary end points of the ...“negative band gap” of ...
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Influence of Mg Doping on ZnO Nanoparticles for Enhanced Photocatalytic Evaluation and Antibacterial Analysis
... By inducing more defects over the surface of ZnO, the optical adsorption properties can be enhanced. Basically minute amounts of dopants are sufficient to act as do- nors or acceptors inside the semiconductor crystal ...
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Chemical bonding in copper based transparent conducting oxides: CuMO(2) (M = In, Ga, Sc)
... the band edge energy as a function of the wavevector k which is obtained from the PBE +U ...parabolic band at the same k-point. However, as the valence band maxima of the delafossites ...
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Role of edge facets on stability and electronic properties of III–V nanowires
... the valence band and the minimum of the conduction band to be mainly defined by p-states of III and V surface atoms, while for arsenide NWs valuable contributions to the top of the valence ...
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Thiolated truxene derivatives as hole-transporting materials for efficient perovskite solar cells
... In summary, we report an efficient synthesis of two thiolatedtruxene-based two-dimensional HTMs, comprising electron-rich thiol engineered substituents. HTMs are obtained from simple and inexpensive starting materials ...
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Ab Initio Calculations for the Effect of Pressure on the Structural Properties of Si Nanoclusters
... and valence band widths increase with compression, as shown in Figures 4(a) and (b) and they decrease with tensile stress, whereas the conduction band has no systematic behavior with pressure as ...
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Electronic states at the interface of Ti-Si oxide on Si(100)
... Ti-oxide valence band is found at ⬃ ...a band gap of 3.2 eV, puts the TiO 2 conduction band in essential alignment with the conduction band in bulk ...the band alignment is ...
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On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors) 3 The Minimum of Temperature Dependence of Resistivity
... the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers be- come predominant factor in the ...
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Thermoreflectance of LiF between 12 and 30 eV
... fundamental band gap Γ15→Γ1. Structure associated directly with the band gap is not manifest, so the Γ15−Γ1 energy is determined indirectly to be ...crystal-field-split valence band at L and ...
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Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors
... the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spec- tra, including plasma screening, bandgap ...
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