All SEMITOP® types can be analysed with the simulation software tool “SEMISEL” using real application parameters like:
DC-link voltage
Switching frequency
Output current
Temperatures
Overload conditions
Others
The software will return chip losses and chip junction temperature estimation for the input operating conditions.
“SEMISEL” is a free software available on SEMIKRON website: http://www.semikron.com/service-support/semisel-simulation.html
12 Caption of figures
Figure 1: SEMITOP® Press-Fit family (left) and one single step PCB assembly concept (right) ... 5
Figure 2: SEMITOP® mechanical construction ... 6
Figure 3: SEMITOP®4 dimension example ... 7
Figure 4: SEMITOP® positioning inside SEMIKRON portfolio ... 9
Figure 5: SEMITOP® flexibility: up to 55kW output power ... 9
Figure 6: SEMITOP® available solutions with fast switching technologies ... 10
Figure 7: SiC chip combinations and SEMITOP® SiC available configuration ... 10
Figure 8: Frequency range application for different modules ... 13
Figure 9: 600V/650V IGBT technological positioning ... 14
Figure 10: 1200V IGBT Trench technology positioning ... 16
Figure 11: IGBT Safe Operating Area (SOA) diagram ... 20
Figure 12: IGBT Reverse Bias Safe Operating Area (RBSOA) diagram ... 20
Figure 13: IGBT Short Circuit Safe Operating Area (SCSOA) diagram ... 21
Figure 14: MOSFET Safe Operating Area (SOA) diagram ... 22
Figure 15: Diode Surge overload current vs. time ... 22
Figure 16: SEMITOP® structure and concept of SKiiP technology ... 23
Figure 17: Thermal resistance paths for a baseplate and a baseplate-less module... 24
Figure 18: Maximum output power as function of the switching frequency ... 25
Figure 19: SEMITOP® package sketch (cross section view) ... 26
Figure 20: CTE comparison for different power modules ... 27
Figure 21: System setup for Rth measurement ... 28
Figure 22: Multilayer thermal structure and thermal equivalent Cauer network ... 29
Figure 23: Foster network ... 30
Figure 24: Example of thermal impedance profile ... 30
Figure 25: Typical NTC sensor characteristic ... 31
Figure 26: Typical NTC sensor characteristic ... 31
Figure 27: Position of temperature sensor on DBC substrate ... 32
Figure 28: Sketch of high energy plasma caused by melted off bond wire ... 32
Figure 29: Heatsink specification ... 33
Figure 30: Scratch specification for SEMITOP® modules ... 33
Figure 31: PCB assembly and heatsink assembly ... 35
Figure 32: Assembly steps for SEMITOP® module with soldered terminals ... 36
Figure 33: Assembling “module+PCB” to the heatsink ... 36
Figure 34: Measuring gauge by ELCOMETER... 38
Figure 35: SEMITOP® with pre-applied thermal paste ... 38
Figure 36: Example of running application with multiple SEMITOP® modules on the same PCB ... 40
Figure 37: Good soldered joint profile ... 40
Figure 38: Detail of solder joint ... 41
Figure 39: Wave soldering profile ... 41
Figure 40: Distance between components and center of PTH ... 43
Figure 41: Press-in depth in PCB ... 43
Figure 42: Demo PCB for GD topology: outer dimension and schematic ... 44
Figure 43: Demo PCB for DGDL topology: outer dimension and schematic ... 45
Figure 44: Principle of Press-Fit connection ... 46
Figure 45: Pin temperature rise, at the PCB contact, as function of the PCB track width and of the DC current ... 47
Figure 46: Soldered vs press-fit pin current capability ... 47
Figure 47: Electroplated tin on copper with large Cu6Sn5 intermetallics ... 48
Figure 48: Normalized thermal resistance junction to heatsink for different thermal compound ... 49
Figure 49: DBC crack with the use of PCM ... 50
Figure 50: SEMITOP® packaging system ... 51
Figure 51: Place for label on SEMITOP® packing boxes ... 52
Figure 52: Label of SEMITOP® packing boxes ... 52
Figure 53: PCB example for vibration test and test arrangement for contact resistance ... 56
Figure 54: Typical wire bond lift off observed to the electron microscope ... 57
Figure 55: Dependency of the power cycling value Nf as a function of the temperature cycling amplitude Tj and the mean temperature Tjm for standard IGBT modules ... 58
Figure 56: Customer specific process overview ... 59
13 Caption of tables
Table 1: SEMITOP® tolerances according to the different dimensional ranges ... 7
Table 2: SEMITOP® overall housing size dimensions ... 8
Table 3: Device technology matrix ... 11
Table 4: IGBT technology matrix, from latest to oldest ones ... 11
Table 5: SEMITOP® designation system ... 12
Table 6: Comparison between available Si 600V/650V IGBT technologies ... 14
Table 7: Comparison between available 650V IGBT technologies ... 15
Table 8: Comparison between available 1200V IGBT technologies ... 15
Table 9: Comparison between available 1200V IGBT technologies ... 16
Table 10: MOSFET portfolio ... 17
Table 11: SiC MOSFET portfolio ... 17
Table 12: Main SiC markets and tasks ... 19
Table 13: IGBT performance comparison ... 25
Table 14: IGBT performance comparison for the same reference point ... 25
Table 15: Typical material data for SEMITOP® package... 26
Table 16: Cosmetic issue acceptance matrix ... 34
Table 17: Mounting process outline ... 37
Table 18: Recommended thermal grease thickness for SEMITOP® modules ... 37
Table 19: Pre-applied thermal grease thickness with the use of a special pattern ... 38
Table 20: Pre-applied thermal paste storage conditions ... 39
Table 21: Mounting specifications for SEMITOP® ... 39
Table 22: Specification of PTH for the press-in process ... 42
Table 23: Specification of PTH for soldering of Press-Fit pins to the PCB ... 42
Table 24: Specification of PCB hole diameter for the mounting post ... 42
Table 25: Result of chemical analysis for 6 RoHS restricted substances ... 50
Table 26: SEMITOP® laser marking ... 51
Table 27: Number of modules per package ... 51
Table 28: Storage conditions ... 53
Table 29: Shelf life conditions ... 53
Table 30: Qualification program for SEMITOP® ... 54
Table 31: Special tests ... 55
Table 32: SEMITOP® Press-Fit qualification test ... 55
Table 33: Details of SEMITOP® Press-Fit vibration and temperature cycling test ... 56
Table 34: Example of service ... 60
14 Caption of equations Equation 1: Rth,j-s as function of the temperature parameters and impressed power ... 27
Equation 2: Equation for thermal resistance and capacitance ... 29
Equation 3: Zth general equation for the Foster network ... 29
Equation 4: NTC general equation ... 30
Equation 5: PTC general equation ... 31
Equation 6: Number of cycles to failure ... 57
15 Symbols and Terms
Letter Symbol Term
a.c, AC Alternating current
Al2O3 Aluminum oxide
AlN Aluminum nitride
CTE Coefficient of thermal expansion
Cth Thermal capacitance
d.c., DC Direct current
DBC Direct bonding copper
di/dt Change of current per time
dic/dt Change of IGBT collector current per time
DIN Deutsches Institut für Normung e.V. (DIN; in English , the German Institute for Standardization)
EN European standard
Eoff Energy dissipation during turn-off Eon Energy dissipation during turn-on
fsw Switching frequency
I Indium
IC Continuous collector current IC,nom Nominal collector current ICRM Repetitive peak collector current ID Continuous drain current (for MOSFET)
IF(OV) Overload forward current
IFSM Surge forward current ISC Short circuit current
NPC Three-level inverter with clamp diode
PTH Plated through-holes
rds(on) Drain-source on-resistance (MOSFET)
RG Gate circuit resistance
Rth,c-s Thermal resistance case to sink Rth,j-c Thermal resistance junction to case Rth,j-s Thermal resistance junction to sink
SiC Silicon Carbide
Sn Tin
TNPC Mixed voltage three-level inverter
TS Heatsink temperature
Tj Silicon junction temperature VCC Collector-emitter supply voltage VCE Collector-emitter voltage
VCES Collector-emitter voltage with gate-emitter short circuited VCE,sat Collector-emitter saturation voltage
VDD Drain-source supply voltage (MOSFET)
VDS Drain-source voltage
VR (Direct) reverse voltage
VRRM Repetitive peak reverse voltage
Zth,j-s Transient thermal impedance junction to heatsink
A detailed explanation of the terms and symbols can be found in the "Application Manual Power Semiconductors" [2]
16 References
[1] www.SEMIKRON.com
[2] A. Wintrich, U. Nicolai, W. Tursky, T. Reimann, “Application Manual Power Semiconductors”, ISLE Verlag 2015, ISBN 978-3-938843-83-3
[3] “Power Cycling with High Temperature Swing of Discrete Components based on
Different Technologies” (IEEE Power Electronics Specialists Conference 2004 PESC04, pp2593-2598) [4] www.powerguru.com
[5] Self acting PressFIT module; Thilo Stolze; Infineon Technologies AG, Max-Planck-Strasse 5, 59581 Warstein.
[6] Reliability of PressFit connections, T.Stolze, M.Thoben, M.Kich, R.Severin, Infineon Technologies AG, Max-Planck-Strasse 5, 59581 Warstein.
17 Disclaimer
SEMIKRON reserves the right to make changes without further notice herein to improve reliability, function or design. Information furnished in this document is believed to be accurate and reliable.
However, no representation or warranty is given and no liability is assumed with respect to the accuracy or use of such information, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the application or use of any product or circuit described herein. Furthermore, this technical information may not be considered as an assurance of component characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. This document supersedes and replaces all information previously supplied and may be superseded by updates without further notice.
SEMIKRON products are not authorized for use in life support appliances and systems without the express written approval by SEMIKRON.
SEMIKRON INTERNATIONAL GmbH P.O. Box 820251 • 90253 Nuremberg • Germany Tel: +49 911-65 59-234 • Fax: +49 911-65 59-262
[email protected] • www.semikron.com