Features / Advantages: Applications: Package: TO-263 (D2Pak)

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1 2 3 Low Loss and Soft Recovery

High Performance Schottky Diode Common Cathode

Schottky Diode

Part number

DSA30C150PC

Marking on Product: DSA30C150PC

Backside: cathode FAV

V

F

0.75 V

RRM

15 150

=

V = V

I = 2x A

Features / Advantages: Applications: Package:

● Very low Vf

● Extremely low switching losses

● Low Irm values

● Improved thermal behaviour

● High reliability circuit operation

● Low voltage peaks for reduced protection circuits

● Low noise switching

● Rectifiers in switch mode power supplies (SMPS)

● Free wheeling diode in low voltage converters

TO-263 (D2Pak)

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at

Disclaimer Notice

www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190923b

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V = V Symbol Definition

Ratings typ. max.

IR

V

I A

VF 0.89

R 1.75 K/W

R

min.

15

VRSM V

250 T = 25°CVJ

T = °CVJ 2.5 mA

V = VR

T = 25°CVJ

I = A_F

V

T = °CC 155

Ptot T = 25°CC 85 W

R K/W

15 150 max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions Unit

1.02 T = 25°CVJ

125

VF0 T = °CVJ 175 0.55 V

rF 8.8 mΩ

V 0.75 T = °CVJ

I = AF

V 15

0.89 I = AF 30

I = AF 30

threshold voltage

slope resistance for power loss calculation only

µA

125

VRRM max. repetitive reverse blocking voltage T = 25°CVJ 150 V

CJ junction capacitance V = VR 24 f = 1 MHz T = 25°CVJ 82 pF

IFSM max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 VR T = 45°C_VJ T = °CVJ 175

330 A

150

FAV

d = rectangular 0.5 average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Schottky

150

0.25

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Ratings

Product Marking

Date Code Part Number

Logo

Lot#

XXXXXXXXX

IXYS

^yywwZ

123456 Location

D S A 30 C 150 PC

Part description

Diode Schottky Diode low VF Common Cathode

TO-263AB (D2Pak) (2)

=

DSA30C150HB TO-247AD (3) 150

Current Rating [A]

Reverse Voltage [V]

=

Package

Top °C

TVJ virtual junction temperature -55 175 °C

Weight 1.5 g

Symbol Definition Conditions min. typ. max.

operation temperature

Unit

F_C mounting force with clip 20 60 N

IRMS RMS current per terminal 35 A

150 -55

TO-263 (D2Pak)

DSA30C150PC-TUB DSA30C150PC Tube 50 525460

Similar Part Package Voltage class

DSA30C150PB TO-220AB (3) 150

Delivery Mode Quantity Code No.

Ordering Number Marking on Product Alternative

Ordering

DSA30C150PC-TRL DSA30C150PC Tape & Reel 800 523014

Standard

Tstg storage temperature -55 150 °C

threshold voltage 0.55 V

mΩ V0 max

R0 max slope resistance * 5.6

Equivalent Circuits for Simulation ^{T =}VJ

I V₀ R0 Schottky

* on die level 175°C

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W

c2 A

A1

c

L

E

2x e

L 1 D

3 2 1

3.81 (0.150) 1.78

(0.07)

2.54 (0.100)

3.05 (0.120) 10.92 (0.430)

9.02 (0.355) mm (Inches)

Recommended min. foot print

3x b2

E1

2x b

H D 1

Supplier Option

L 2

4

min max min max

A 4.06 4.83 0.160 0.190 A1

A2

b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 D2

E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335

e e1

H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ.

0.02 0.040 typ.

0.0008 0.002 Dim. Millimeter Inches

typ. 0.10 typ. 0.004

2.41 0.095

0.098

4.28 0.169

All dimensions conform with and/or within JEDEC standard.

2,54 BSC 0,100 BSC 2.5

1 2 3

Outlines TO-263 (D2Pak)

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0.0 0.2 0.4 0.6 0.8 1.0 1.2 0

5 10 15 20 25 30

0 20 40 60 80 100

0.001 0.01 0.1 1 10 100

5 15 25 35

0 10 20 30

0 5 10 15 20 25 30

0 50 100 150 200

0 10 20 30 40

0 20 40 60 80 100 120 140 160 0

100 200 300 400

DC

25°C 50°C 75°C 100°C 125°C T_VJ=175°C

150°C

I_F

[A]

V_F [V]

I_R

[mA]

V_R [V] V_R [V]

C_T

[pF]

T_C [°C] I_F(AV) [A]

P_(AV)

[W]

Note: All curves are per diode Fig. 1 Maximum forward voltage

drop characteristics

Fig. 2 Typ. reverse current I_Rvs. reverse voltage V_R

Fig. 3 Typ. junction capacitance C_Tvs. reverse voltage V_R

Fig. 4 Average forward current I_F(AV)vs. case temperature T_C

Fig. 5 Forward power loss characteristics I_F(AV)

[A]

T_VJ= 150°C 125°C 25°C

d = 0.5

d = DC 0.5 0.33 0.25 0.17 0.08

T_VJ= 25°C

0.0001 0.001 0.01 0.1 1 10

0.0 0.1 1.0

t [s]

Fig. 6 Transient thermal impedance junction to case Z_thJC

[K/W]

0.08 D=0.5 0.33 0.25 0.17

Single Pulse (Thermal Resistance)

2.0

Schottky