Features / Advantages: Applications: Package: Y2

(1)

Phase leg

Thyristor Module

3

1

2

6

7

5

4 Part number

MCC220-16io1

Backside: isolated

TAV

T

V

1.14 V

RRM

250 1600

=

V

=

V

I

=

A

2x

Recommended replacement:

MCC310-16io1

Features / Advantages:

Applications:

Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

Y2

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments;

- the conclusion of quality agreements;

(2)

V = V

kA²s

Symbol

Definition

Ratings

typ.

max.

I

V

I

A

V

T

1.24 R

0.14 K/W

min.

250 V

V

1 T = 25°C

VJ

T = °C

VJ

40 mA

V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85 P

tot

T = 25°C

C

820 W

200 1600

forward voltage drop

total power dissipation

Conditions

Unit

1.39 T = 25°C

VJ

140 V

T0

T = °C

VJ

140

0.90 V

r

T

1 mΩ

V

1.14 T = °C

VJ

I = A

T

V

200

1.33 I = A

400 I = A

400 threshold voltage

slope resistance

for power loss calculation only

mA

125 V

T = 25°C

VJ

1600

V

I

400 A

P

GM

max. gate power dissipation

t = 30 µs

P

T = °C

C

140

120 W

W

t =

P

60 P

GAV

average gate power dissipation

20 W

C

J

junction capacitance

V = V

R

400 f = 1 MHz

T = 25°C

VJ

438 pF

I

TSM

max. forward surge current

t = 10 ms; (50 Hz), sine

T = 45°C

VJ

T = °C

VJ

140 I²t

value for fusing

T = 45°C

T = °C

140 V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ R VJ R

thJC

thermal resistance junction to case

T = °C

VJ

140

8.50

9.18

261.0

253.4 kA

kA

7.23

7.81

361.3

350.6 1600

500 µs

RMS forward current

T(RMS) TAV

180° sine

average forward current

(di/dt)

cr

critical rate of rise of current

T

VJ

= 140 °C; f = 50 Hz

repetitive, I =

100 A/µs

V

GT

gate trigger voltage

V = 6 V

T

=

25 °C

(dv/dt)

critical rate of rise of voltage

T

= 140°C

A/µs

500 V/µs

t = µs;

I

A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ D VJ

750 A

T P G

=

1 di /dt

G

=

1 A/µs;

DRM cr

V = ⅔ V

DRM GK

1000

2 V

T

VJ

=

-40

°C

I

GT

gate trigger current

V = 6 V

D

T

VJ

=

25 °C

150 mA

T

VJ

=

-40

°C

3 V

200 mA

V

GD

gate non-trigger voltage

T

VJ

=

°C

0.25 V

I

GD

gate non-trigger current

10 mA

V = ⅔ V

D DRM

140 latching current

T

VJ

=

°C

200 mA

I

L

t

p

=

30 µs

25 I

G

= 0.45

A;

di /dt

G

= 0.45

A/µs

holding current

T

VJ

=

°C

150 mA

I

H

V = 6 V

D

R = ∞

GK

25 gate controlled delay time

T

VJ

=

°C

2 µs

t

gd

25 I

G

=

1 A;

di /dt

G

=

1 A/µs

V = ½ V

D DRM

turn-off time

T

VJ

=

°C

200 µs

t

q

di/dt =

10 A/µs

dv/dt =

50 V/µs

V =

R

100 V; I

T

= 250

A;

V = ⅔ V

DRM

t

p

= 200

µs

non-repet., I = 250 A

T

125 R

thCH

thermal resistance case to heatsink

0.040 K/W

Thyristor

1700

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

T R/D R/D

(3)

Ratings

Part Number

yywwAA

Date Code (DC) + Production Index (PI)

Lot.No: xxxxxx

Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),

blank(32), serial no.# (33-36) Circuit

Package

T

op

°C

M

D

mounting torque

2.5

5 Nm

T

VJ

virtual junction temperature

-40

140 °C

Weight

255 g

Symbol

Definition

Conditions

min.

typ.

max.

operation temperature

Unit

M

_T

terminal torque

12

15 Nm

V

t = 1 second

V

t = 1 minute

isolation voltage

mm

13.0

13.0 d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

per terminal

600 A

125 -40

terminal to terminal

Y2

Delivery Mode

Quantity

Code No.

Ordering Number

Marking on Product

Ordering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCC220-16io1

Box

2 418854

Standard

3600

ISOL

T

stg

storage temperature

-40

125 °C

3000

threshold voltage

0.9 V

mΩ

V

0 max

R

0 max

slope resistance *

0.5 Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Thyristor

140 °C

(4)

116

80 max.

12.4

6

5.5

6

0

3

8

5

1

2

3

4

5

6

7

28.5

35

42.5 3x M8

21 2.8/0.8

65 x 57

3

2

3

0

4 .5

0 .2

5

1

3 ±

1

3

1

2

6

7

5

4 Outlines

Y2

(5)

TVJ = 45°C TVJ = 140°C 50 Hz, 80% VRRM

I

TSM

I

FSM

[A]

12000

10000

8000

6000

2000

0

10

-3

4000

t [s]

10

-2

₁₀

-1

₁₀

0

₁₀

1

Fig. 1 Surge overload current

I

T(F)SM

: crest value, t: duration

VR = 0 V TVJ = 140°C TVJ = 45°C

t [ms]

I

2

_t

[A

2

_s]

10

6

10

5

1

2

3

6 8 10

Fig. 2 I

2

_{t versus time (1-10 ms)}

Fig. 3 Max. forward current

at case temperature

0

50

100

150 T

C

[°C]

DC 180° sin 120° 60° 30°

200

500

400

200

100

0 I

TAVM

[A]

300 Fig. 4 Power dissipation versus onstate current and•

ambient temperature (per thyristor/diode)

DC 180° sin 120° 60° 30°

0

50

100

150 T

A

[°C]

I

TAVM

, I

FAVM

[A]

0

100

200

300

400

600

400

200

100

0 P

T

[W]

RthJA [K/W] 0.3 0.4 0.5 0.6 0.8 1 1.4 1.8 Circuit B6 3x MCC250 or MCD250 RthKA [K/W] 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3

0

50

100

150 T

A

[°C]

Fig. 6 Three phase rectifier bridge: Power dissipation versus

direct output current and ambient temperature

I

dAVM

[A]

0

200

400

600 2500

1500

500

0 P

T

[W]

2000

1000

Fig. 5 Gate trigger characteristics

Fig. 7 Gate trigger delay time

IGT: TVJ = -40°C IGT: TVJ = 0°C IGT: TVJ = 25°C 1: PGAV = 20W 2: PGAV = 60W 3: PGAV = 120W 1 2 3 IGD: TVJ = 25°C TVJ = 125°C

V

G

[V]

10

1

0.1

0.01

0.001

0.01

0.1

150 I

G

[A]

1

10

100

0.01

0.1

1

10 t

gd

[µs]

I

G

[A]

TVJ = 25°C Limit typ.

300

500 Thyristor

(6)

RthKA [K/W] 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3

0

50

100

150 T

A

[°C]

I

RMS

[A]

0

100

200

500 2500

1500

500

0 P

tot

[W]

2000

1000

0

0.05

0.10

0.15

0.20

0

0.05

0.10

0.15 30°

DC

30°

DC

Z

thJC

[K/W]

10

-2

₁₀

-1

₁₀

0

₁₀

1

₁₀

2

t [s]

Fig. 7 Three phase AC-controller: Power dissipation versus RMS

output current and ambient temperature

Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)

Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode)

t [s]

Z

thJK

[K/W]

10

-2

₁₀

-1

₁₀

0

₁₀

1

₁₀

2

10

-3

R

thJC

for various conduction angles d:

d

R

thJC

[K/W]

DC

0.139 180°C

0.141 120°C

0.142 60°C

0.142 30°C

0.143 Constants for Z

thJC

calculation:

i

R

thi

[K/W]

t

i

[s]

1 0.0037

0.0099

2 0.0177

0.168

3 0.1175

0.456 R

thJK

for various conduction angles d:

d

R

thJK

[K/W]

DC

0.179 180°C

0.181 120°C

0.182 60°C

0.183 30°C

0.183 Constants for Z

thJK

calculation:

i

R

thi

[K/W]

t

i

[s]

1 0.0033

0.0099

2 0.0159

0.168

3 0.1053

0.456

4

0.04

1.36

300

400

Circuit B6 3x MCC250 or MCD250