Features / Advantages: Applications: Package: Y1

(1)

Single Thyristor

Thyristor Module

3 5 4 2

Part number

MCO600-16io1

Backside: isolated

TAV

V T 1.06 V

RRM

600 1600

=

V = V

I = A

Features / Advantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

Y1

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~ 3600

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.

Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments;

- the conclusion of quality agreements;

Terms Conditions of usage:

(2)

V = V

kA²s

MA²s

Symbol Definition

Ratings

typ. max.

I

V

I A

V

T

1.12 R 0.065 K/W

min.

600 V V

2 T = 25°C

VJ

T = °C

VJ

40 mA

V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85 P

tot

T = 25°C

C

1770 W

600 1600

forward voltage drop

total power dissipation

Conditions Unit

1.34 T = 25°C

VJ

125 V

T0

T = °C

VJ

140 0.81 V

r

T

0.4 mΩ

V

1.06 T = °C

VJ

I = A

T

V

600

1.33 I = A 1200

I = A 1200

threshold voltage

slope resistance for power loss calculation only

mA

125 V T = 25°C

VJ

1600 V

I 940 A

P

GM

max. gate power dissipation t = 30 µs

P

T = °C

C

140 120 W

W

t =

P

60 P

GAV

average gate power dissipation 20 W

C

J

junction capacitance V = V

R

400 f = 1 MHz T = 25°C

VJ

620 pF

I

TSM

max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C

_VJ

T = °C

VJ

140 I²t value for fusing T = 45°C

T = °C 140

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ R VJ R thJC

thermal resistance junction to case

T = °C

VJ

140

15.0

16.2

812.8

788.8 kA

kA

12.8

13.8

1.13

1.09 1600

300 µs

RMS forward current

T(RMS) TAV

180° sine

average forward current

(di/dt)

cr

critical rate of rise of current T

VJ

= 140 °C; f = 50 Hz repetitive, I = 100 A/µs

V

GT

gate trigger voltage V = 6 V T = 25 °C

(dv/dt) critical rate of rise of voltage T = 140°C

A/µs

500 V/µs

t = µs;

I A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

D VJ

1800 A

T P

G

= 1

di /dt

G

= 1 A/µs;

DRM

cr

V = ⅔ V

DRM

GK

1000

2 V

T

VJ

= -40 °C

I

GT

gate trigger current V = 6 V

D

T

VJ

= 25 °C 300 mA

T

VJ

= -40 °C

3 V

400 mA

V

GD

gate non-trigger voltage T

VJ

= °C 0.25 V

I

GD

gate non-trigger current 10 mA

V = ⅔ V

D DRM

140 latching current T

VJ

= °C 400 mA

I

L

t

p

= 30 µs 25

I

G

= 1 A; di /dt

G

= 1 A/µs

holding current T

VJ

= °C 300 mA

I

H

V = 6 V

D

R = ∞

GK

25 gate controlled delay time T

VJ

= °C 2 µs

t

gd

25 I

G

= 1 A; di /dt

G

= 1 A/µs

V = ½ V

D DRM

turn-off time T

VJ

= °C 350 µs

t

q

di/dt = 10 A/µs dv/dt = 50 V/µs

V =

R

100 V; I

T

= 600 A; V = ⅔ V

DRM

t

p

= 200 µs

non-repet., I = 600 A

T

125 R

thCH

thermal resistance case to heatsink 0.02 K/W

Thyristor

1700

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

T R/D R/D

200

(3)

Ratings

PART NUMBER ywwH

Date Code Prod. Index

Made in Germany

Circuit Diagram

Package

T

op

°C

M

_D

mounting torque 4.5 7 Nm

T

VJ

virtual junction temperature -40 140 °C

Weight 650 g

Symbol Definition Conditions min. typ. max.

operation temperature

Unit

M

_T

terminal torque 11 13 Nm

V t = 1 second V

V

t = 1 minute

isolation voltage

mm

16.0

25.0 d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current per terminal 600 A

125 -40

terminal to terminal

Y1

Delivery Mode Quantity Code No.

Ordering Number Marking on Product

Ordering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCO600-16io1 MCO600-16io1 Box 3 474304

Standard

ISOL

3600

T

stg

storage temperature -40 125 °C

3000

threshold voltage 0.81 V

mΩ

V

0 max

R

0 max

slope resistance * 0.22

Equivalent Circuits for Simulation ^{T =}

VJ

I V

₀

R

0

Thyristor

140 °C

* on die level

(4)

2 3

6.2

80

92 22.5 35 28.5

3 8

5 0 4 5 6 7 4 3

4 9

M8 x20

5 Optional accessories for modules

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red

Type ZY 180L (L = Left for pin pair 4/5)

Type ZY 180R (R = Right for pin pair 6/7) UL 758, style 3751

5 2 + 0 -1 ,4

3 5 4 2

Outlines Y1

(5)

0.01 0.1 1

6000

7000

8000

9000

10000

11000

12000

13000

0.4 0.8 1.2 1.6

0

200

400

600

800 1000

1200

0.001 0.01 0.1 1 10 100

0.00

0.02

0.04

0.06

0.08

0.10 I

_TSM

[A]

I

_T

[A]

V

_T

[V]

t [s]

Z

_thJC

[K/W]

2 3 4 5 6 7 8 9 0 1

1

10

⁵

10

⁶

10

⁷

I

²

t

[A

²

s]

t [ms]

I

_T(AV)M

[A]

T

_C

[°C]

0 25 50 75 100 125 150

0

200

400

600

800 1000

Fig. 1 Forward characteristics Fig. 3 I

²

t versus time (1-10 ms)

t [s]

Fig. 6 Max. forward current

at case temperature

Fig. 2 Surge overload current

Fig. 8 Transient thermal impedance

T

_VJ

= 25°C

T

_VJ

= 125°C

T

_VJ

= 45°C

50 Hz, 80% V

_RRM

T

_VJ

= 125°C

T

_VJ

= 45°C

V

_R

= 0 V

0 200 400 600

0

200

400

600

800 I

_T(AV)

[A]

P

_(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

0 50 100 150

T

_amb

[°C]

dc =

1

0.5

0.4

0.33

0.17

0.08 I

_G

[mA] I

_G

[mA]

Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time

dc =

1

0.5

0.4

0.33

0.17

0.08 R

_thi

[K/W] t

_i

[s]

0.0031 0.00054

0.0168 0.0098

0.0390 0.54

0.0061 12

30°

60°

120°

180°

DC

R

_thHA

0.02

0.04

0.06

0.08

0.1

0.2

10

^-3

10

^-2

10

^-1

10

⁰

10

¹

10

²

0.1

1

10 V

_G

[V]

1: I

_GT

, T

_VJ

= 125°C

2: I

_GT

, T

_VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

I

_GD

, T

_VJ

= 125°C

4: P

_GM

= 20 W

5: P

_GM

= 60 W

6: P

_GM

= 120 W

1

2

3

4

6

5 0.01 0.1 1 10

1

10

100 t

_gd

[µs]

T

_VJ