AMD AXDA3000DKV4D Athlon TM XP Microprocessor Structural Analysis

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September 22, 2004

AMD

AXDA3000DKV4D

Athlon

TM

XP Microprocessor

Structural Analysis

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AMD AXDA3000DKV4D Athlon

TM

_{Microprocessor}

Structural Analysis

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Y:\Reports\AMD\AXDA3000DKV4D\SAR\report.doc

Introduction

The AMD AXDA3000DKV4D is an Athlon™ XP microprocessor tailored for Microsoft® Windows® XP. The device runs at 2.167 GHz and incorporates 640 KB of total on die cache. Maximum system bus speed is rated at 333 MHz. The reported die size is 101 mm² and features approximately 54.3 million transistors. The device is packaged in a 462-pin Socket A OPGA (Organic Pin Grid Array) package.

The AXDA3000DKV4D was reportedly manufactured in Dresden, Germany at AMD’s Fab 30 using 0.13 micron copper process technology. The process design featured a full CMP process with nine levels of damascene copper, and one level of polycide. The device analyzed features physical gate lengths measuring 0.07 micron. The device employs Shallow Trench Isolation (STI), and twin wells in a P-epi on a P-type substrate. Cobalt silicide is present on the polysilicon and diffusions (salicide process).

The passivation layer consisted of oxynitride over nitride. All interlevel dielectrics consisted of a thin nitride capping layer over the previous copper layer followed by various depositions of oxide, oxynitride, and nitride. The copper lines and final layer of glass were subjected to CMP. The pre-metal dielectric consisted of an oxynitride sealant dielectric followed by a thick oxide layer.

Cross-sectional analysis of the device structure was performed using a Field Emission Scanning Electron Microscope (FESEM) and a Transmission Electron Microscope (TEM). Analysis of the material composition was achieved with X-ray Energy Dispersive Spectroscopy (EDS).

This report contains the following detailed information:

• Package photographs and x-ray • Die markings and die photograph

• Measurement of vertical and horizontal dimensions of major microstructural features

• FESEM and TEM cross-sectional micrographs of dielectric materials, major features, and

transistors

All the information was derived by Chipworks from the following sample:

Package Markings: AMD Athlon™ AXDA3000DKV4D 9576373250671 AQXCA 0308VPBW

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List of Figures

Device Identification 0.1.1 Package Markings 0.1.2 Package X-Ray 0.2.1 Die Markings 0.2.2 Die Photograph 0.3.1 Die Corners

0.3.2 Die Corners (Continued)

0.3.3 Bond Pad Layout

0.3.4 Bus Line Layout

Major Microstructural Features

2.1.1 Die Edge

2.1.2 Detail of Edge Seal Ring

2.1.3 Etch Uniformity Patterns

2.1.4 General Device Structure

2.1.5 General Device Structure

2.1.6 Bond Pad to Metal 9 Via

2.1.7 Detail of Bond Pad to Metal 9 Via

2.1.8 Metal 9 Profiles

2.1.9 Detail of Metal 9 Profile

2.1.10 Metal 9 to Metal 8 Vias

2.1.11 Detail of Metal 9 to Metal 8 Vias

2.1.13 Detail of Metal 8 Profiles

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Structural Analysis

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2.1.19 Detail of Metal 7 to Metal 6 Vias

2.1.23 Detail of a Metal 6 to Metal 5 Via

2.1.26 Metal 5 to Metal 4 Via

2.1.42 Metal 1 to Polycide Contacts

2.1.43 Detail of a Metal 1 to Polycide Contact

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2.1.45 Metal 1 to P+ Diffusion Contact

2.1.46 N-Channel Transistors

2.1.47 P-Channel Transistors

2.1.48 Polycide Structure

2.1.49 Minimum Polycide Spacing

2.1.50 STI/Gate Oxide Transition

2.1.51 STI/Gate Oxide Transition

2.1.52 Minimum Isolation

2.1.53 Polycide on Minimum Isolation

2.1.54 Cache Array

2.1.55 Cache Array

2.1.56 Epi and Well Structure

2.1.57 Detail of N-Well Structure

Transistor Microstructural Analysis

3.1.1 FESEM Micrograph – N-Channel Transistors (Si Etch)

3.1.2 FESEM Micrograph – P-Channel Transistor (Si Etch)

3.1.3 FESEM Micrograph – Polycide Structure (Oxide Etch)

3.1.4 FESEM Micrograph – Polycide Structure (Oxide Etch)

3.2.1 TEM Micrograph – General Device Structure

3.2.2 TEM Micrograph – Detail of ILD Structure

3.2.6 TEM Micrograph – General Device Structure

3.2.7 TEM Micrograph – Detail of Device Structure

3.2.8 TEM Micrograph – Detail of Device Structure

3.2.9 TEM Micrograph – M1 Profile

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Structural Analysis

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3.2.11 TEM Micrograph – Tungsten Plug – S/D Contact

3.2.12 TEM Micrograph – Detail of Tungsten Plug – S/D Interface

3.2.13 TEM Micrograph – Detail of Tungsten Plug Liner

3.2.14 TEM Micrograph – Tungsten Plug Liner (Half Height)

3.2.15 TEM Micrograph – Detail of Polycide Gate

3.2.16 TEM Micrograph – Gate Oxide

3.2.18 TEM Micrograph –Gate Oxide

3.2.20 TEM Micrograph – Gate Oxide

3.2.21 TEM Micrograph – Detail of Nitride Sidewall Spacers

AMD AXDA3000DKV4D Athlon TM XP Microprocessor Structural Analysis

Table of Contents

AMD

AXDA3000DKV4D

Athlon

XP Microprocessor

Structural Analysis

Table of Contents

AMD AXDA3000DKV4D Athlon

_{Microprocessor}

Structural Analysis

Page 1

Introduction

List of Figures

AMD AXDA3000DKV4D Athlon

_{Microprocessor}

Structural Analysis

Page 3

AMD AXDA3000DKV4D Athlon

_{Microprocessor}

Structural Analysis

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