Features Benefits Applications

(1)

2N3819

N-Channel JFET

Product Summary

V_GS(off) (V) V_(BR)GSS Min (V) g_fs Min (mS) I_DSS Min (mA)

–8 –25 2 2

Features Benefits Applications

Excellent High-Frequency Gain:

Gps 11 dB @ 400 MHz

Very Low Noise: 3 dB @ 400 MHz

Very Low Distortion

High ac/dc Switch Off-Isolation

High Gain: AV = 60 @ 100 A

Wideband High Gain

Very High System Sensitivity

High Quality of Amplification

High-Speed Switching Capability

High Low-Level Signal Amplification

High-Frequency Amplifier/Mixer

Oscillator

Sample-and-Hold

Very Low Capacitance Switches

Description

The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz.

Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

1 TO-226AA

(TO-92)

Top View S

D

G 2

3

Absolute Maximum Ratings

Gate-Source/Gate-Drain Voltage . . . –25 V Forward Gate Current . . . 10 mA Storage Temperature . . . –55 to 150C Operating Junction Temperature . . . –55 to 150C

Lead Temperature (¹/₁₆” from case for 10 sec.). . . 300C Power Dissipation^a. . . 350 mW Notes

a. Derate 2.8 mW/C above 25C

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.

(2)

2N3819

2 Siliconix

Specifications ^a

Limits

Parameter Symbol Test Conditions Min Typ^b Max Unit

Static

Gate-Source Breakdown Voltage V_(BR)GSS I_G = –1 mA , VDS = 0 V –25 –35

Gate-Source Cutoff Voltage V_GS(off) V_DS = 15 V, I_D = 2 nA –3 –8 VV

Saturation Drain Current^c I_DSS V_DS = 15 V, V_GS = 0 V 2 10 20 mA

Gate Reverse Current I_GSS V_GS = –15 V, V_DS = 0 V –0.002 –2 nA

Gate Reverse Current I_GSS

T_A = 100C –0.002 –2 mA

Gate Operating Current^d I_G V_DG = 10 V, I_D = 1 mA –20

Drain Cutoff Current ID(off) VDS = 10 V, VGS = –8 V 2 pApA

Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 150 W

Gate-Source Voltage V_GS V_DS = 15 V, I_D = 200 mA –0.5 –2.5 –7.5

Gate-Source Forward Voltage V_GS(F) I_G = 1 mA , V_DS = 0 V 0.7 VV

Dynamic

Common-Source Forward Transconductance^d gfs V_DS= 15 V

f = 1 kHz 2 5.5 6.5

mS Common-Source Forward Transconductance^d gfs V_DS = 15 V

VGS = 0 V f = 100 MHz 1.6 5.5 mS

Common-Source Output Conductance^d g_os

VGS 0 V

f = 1 kHz 25 50 mS

Common-Source Input Capacitance Ciss

V_DS= 15 V V_GS= 0 V f = 1 MHz 2.2 8

Common-Source Reverse Transfer Capacitance C_rss VDS = 15 V, VGS = 0 V, f = 1 MHz pF

0.7 4 pF

Equivalent Input Noise Voltage^d e_n V_DS = 10 V, V_GS = 0 V, f = 100 Hz 6 nV⁄

√Hz Notes

a. TA = 25C unless otherwise noted. NH

b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

c. Pulse test: PW 300 ms, duty cycle 2%.

d. This parameter not registered with JEDEC.

Typical Characteristics

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 500

0 –6 –10

300

0

100

60

0 r_DS

g_os

r_DS @ I_D = 1 mA, V_GS = 0 V g_os @ V_DS = 10 V, V_GS = 0 V f = 1 kHz

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20

0 –10

0

10

0

– Saturation Drain Current (mA)IDSS gfs– Forward Transconductance (mS)

I_DSS

g_fs

V_GS(off) – Gate-Source Cutoff Voltage (V)

80

40

20 400

100 200

–2 –4 –8

V_GS(off) – Gate-Source Cutoff Voltage (V) 6

8

4

2

–6

–2 –4 –8

12 16

4 8

I_DSS @ V_DS = 15 V, V_GS = 0 V g_fs @ V_DS = 15 V, V_GS = 0 V f = 1 kHz

rDS(on)– Drain-Source On-Resistance ()W S)g– Output Conductance (m

(3)

2N3819

Typical Characteristics (Cont’d)

10

0 2 8

6

4

Gate Leakage Current

0 10 20

5 mA 0.1 mA 100 nA

10 nA

1 nA

100 pA

10 pA

1 pA

0.1 pA – Gate LeakageIG

0.1 mA IGSS @ 25C T_A = 25C

T_A = 125C

5 mA

I_GSS @ 125C

Output Characteristics Output Characteristics

Common-Source Forward Transconductance vs. Drain Current

0.1 1 10

10

2

0

gfs– Forward Transconductance (mS)

V_GS(off) = –3 V

T_A = –55C

125C

10

0 4 10

0

–0.2 V –0.4 V –0.6 V –0.8 V –1.2 V –1.0 V VGS = 0 V

15

0 10

0

–0.6 V –0.9 V –1.2 V –1.5 V –1.8 V V_GS = 0 V

–0.3 V

V_DG – Drain-Gate Voltage (V) I_D – Drain Current (mA)

V_DS – Drain-Source Voltage (V) V_DS – Drain-Source Voltage (V)

– Drain Current (mA)ID – Drain Current (mA)ID

V_GS – Gate-Source Voltage (V) – Drain Current (mA)ID

Transfer Characteristics

V_GS(off) = –2 V

T_A = –55C

125C

V_GS – Gate-Source Voltage (V) – Drain Current (mA)ID

Transfer Characteristics

T_A = –55C

125C

V_GS(off) = –3 V 8

6

4

V_DS = 10 V f = 1 kHz

V_GS(off) = –2 V V_GS(off) = –3 V

2 8

6

4

2 6 8 2 4 6 8

3 12

9

6

V_DS = 10 V V_DS = 10 V

10

0 2 8

6

4

0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3

1 mA

25C

25C 25C

–1.4 V

(4)

2N3819

4 Siliconix

Typical Characteristics (Cont’d)

V_GS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 10

0 –0.8 –2

8

0

V_GS(off) = –2 V

TA = –55C

125C

V_GS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltgage 10

–3 –0.6

0 0

T_A = –55C

125C V_GS(off) = –3 V

I_D – Drain Current (mA) I_D – Drain Current (mA)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current

0.1 1 10

300

0

TA = –55C

–3 V VGS(off) = –2 V

10 0.1

100

0

Assume V_DD = 15 V, V_DS = 5 V R_L +10 V

I_D

V_GS(off) = –2 V

–3 V AV– Voltage Gain

Common-Source Input Capacitance vs. Gate-Source Voltage

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5

0 –4 –20

0 – Input Capacitance (pF)Ciss

f = 1 MHz

V_DS = 0 V

V_DS = 10 V

3.0

0 –20

0 – Reverse Feedback Capacitance (pF)Crss

V_DS = 0 V

V_DS = 10 V

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

f = 1 MHz V_DS = 10 V

f = 1 kHz

V_DS = 10 V f = 1 kHz

6

4

2

240

180

120

60

8

6

4

2

80

60

40

20

1

–0.4 –1.2 –1.6 –1.2 –1.8 –2.4

4

3

2

1

–8 –12 –16 –4 –8 –12 –16

2.4

1.8

1.2

0.6

A_V + g_fsR_L 1) RLgos

25C 25C

rDS(on)– Drain-Source On-Resistance ()W

(5)

2N3819

Typical Characteristics (Cont’d)

Reverse Admittance Output Admittance

Input Admittance Forward Admittance

100

10

1

0.1

100 1000

b_is

g_is T_A = 25C

V_DS = 15 V VGS = 0 V Common Source

(mS)

100

10

1

0.1 100

T_A = 25C V_DS = 15 V VGS = 0 V Common Source

(mS) –b_is

g_fs

10

1

0.1

0.01

TA = 25C V_DS = 15 V V_GS = 0 V

Common Source –b_rs

–g_rs

10

1

0.1

0.01

TA = 25C V_DS = 15 V V_GS = 0 V Common Source

b_os

gos

f – Frequency (MHz) f – Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current

10 100 1 k 10 k 100 k

20

0

I_D = 5 mA V_DS = 10 V

20

0

0.1 1 10

T_A = –55C

125C V_GS(off) = –3 V

ID – Drain Current (mA) f – Frequency (Hz)

(mS) (mS)

200 500 200 500 1000

100 200 500 1000 100 200 500 1000

V_DS = 10 V f = 1 kHz V_GS(off) = –3 V

16

12

8

4

16

12

8

4 I_D = I_DSS

25C

nVen

/

Hz

√ ) (

– Noise Voltage S)g– Output Conductance (

Features Benefits Applications

2N3819

N-Channel JFET

Product Summary

Features Benefits Applications

Description

The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz.

Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

Absolute Maximum Ratings

2N3819

2 Siliconix

Specifications a

Typical Characteristics

2N3819

Typical Characteristics (Cont’d)

2N3819

4 Siliconix

Typical Characteristics (Cont’d)

2N3819

Typical Characteristics (Cont’d)

/

√ ) (

Specifications ^a