Thyristor \ Diode Module

(1)

Phase leg

Thyristor \ Diode Module

3

1

2

5

4 Part number

MCD94-22io1B

Backside: isolated

TAV

T

V

1.46 V

RRM

104 2200

=

V

=

V

I

=

A

2x

Features / Advantages:

Applications:

Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-240AA

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments;

- the conclusion of quality agreements;

(2)

V = V

kA²s

Symbol

Definition

Ratings

typ.

max.

I

V

I

A

V

T

1.44 R

0.22 K/W

min.

104 V

V

200 T = 25°C

VJ

T = °C

VJ

15 mA

V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85 P

tot

T = 25°C

C

455 W

150 2200

forward voltage drop

total power dissipation

Conditions

Unit

1.74 T = 25°C

VJ

125 V

T0

T = °C

VJ

125

0.85 V

r

T

3.2 mΩ

V

1.46 T = °C

VJ

I = A

T

V

150

1.99 I = A

300 I = A

300 threshold voltage

slope resistance

for power loss calculation only

µA

125 V

T = 25°C

VJ

2200

V

I

163 A

P

GM

max. gate power dissipation

t = 30 µs

P

T = °C

C

125

10 W

W

t =

P

5 P

GAV

average gate power dissipation

0.5 W

C

J

junction capacitance

V = V

R

700 f = 1 MHz

T = 25°C

VJ

63 pF

I

TSM

max. forward surge current

t = 10 ms; (50 Hz), sine

T = 45°C

VJ

T = °C

VJ

125 I²t

value for fusing

T = 45°C

T = °C

125 V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ R VJ R

thJC

thermal resistance junction to case

T = °C

VJ

125

1.70

1.84

10.4

10.1 kA

kA

1.45

1.56

14.5

14.0 2200

300 µs

RMS forward current

T(RMS) TAV

180° sine

average forward current

(di/dt)

cr

critical rate of rise of current

T

VJ

= 125 °C; f = 50 Hz

repetitive, I =

150 A/µs

V

GT

gate trigger voltage

V = 6 V

T

=

25 °C

(dv/dt)

critical rate of rise of voltage

T

= 125°C

A/µs

500 V/µs

t = µs;

I

A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ D VJ

250 A

T P G

= 0.45

di /dt

G

=0.45

A/µs;

DRM cr

V = ⅔ V

DRM GK

1000

1.5 V

T

VJ

=

-40

°C

I

GT

gate trigger current

V = 6 V

D

T

VJ

=

25 °C

150 mA

T

VJ

=

-40

°C

1.6 V

200 mA

V

GD

gate non-trigger voltage

T

VJ

=

°C

0.25 V

I

GD

gate non-trigger current

10 mA

V = ⅔ V

D DRM

125 latching current

T

VJ

=

°C

200 mA

I

L

t

p

=

10 µs

25 I

G

= 0.45

A;

di /dt

G

= 0.45

A/µs

holding current

T

VJ

=

°C

150 mA

I

H

V = 6 V

D

R = ∞

GK

25 gate controlled delay time

T

VJ

=

°C

2 µs

t

gd

25 I

G

= 0.45

A;

di /dt

G

= 0.45

A/µs

V = ½ V

D DRM

turn-off time

T

VJ

=

°C

185 µs

t

q

V =

R

100 V; I

T

= 150

A;

V = ⅔ V

DRM

non-repet., I = 104 A

T

100 R

thCH

thermal resistance case to heatsink

K/W

Rectifier

2100

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T T R/D R/D

200

0.20

(3)

Ratings

Package

T

op

°C

M

D

mounting torque

2.5

4 Nm

T

VJ

virtual junction temperature

-40

125 °C

Weight

81 g

Symbol

Definition

Conditions

min.

typ.

max.

operation temperature

Unit

M

_T

terminal torque

2.5

4 Nm

V

t = 1 second

V

t = 1 minute

isolation voltage

mm

13.0

9.7

16.0

16.0 d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

per terminal

200 A

100 -40

terminal to terminal

TO-240AA

Delivery Mode

Quantity

Code No.

Ordering Number

Marking on Product

Ordering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCD94-22io1B

Box

36 470244

Standard

3600

ISOL

T

stg

storage temperature

-40

125 °C

3000

threshold voltage

0.85 V

mΩ

V

0 max

R

0 max

slope resistance *

2 Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Thyristor

125 °C

(4)

3

1

2

5

4

(5)

10 100 1000 1 10 100 1000 100 ₁₀1 ₁₀2 ₁₀3 ₁₀4 0.1 1 10 1: IGT, TVJ= 125°C 2: I_GT, T_VJ= 25°C 3: IGT, TVJ= -40°C 4: P_GAV= 0.5 W 5: PGM= 5 W 6: P_GM= 10 W I_GD, T_VJ= 125°C 3 4 2 1 5 6 Limit typ. TVJ= 25°C