TowerJazz High Performance SiGe BiCMOS processes

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TowerJazz High Performance

SiGe BiCMOS processes

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Comprehensive Technology Portfolio

Mixed-Signal Digital CMOS 0.35 µm 0.50 µm BiCMOS, SiGe Power/BCD BCD

RFCMOS RFCMOS and SOI CMOS

BCD

RFCMOS and SOI CMOS

Power/BCD

0.13µm

SiGe SiGe SiGe

0.25 µm 0.18/0.16/0.152 µm 0.13 µm Mixed-Signal Digital CMOS Mixed-Signal Digital CMOS Mixed-Signal Digital CMOS Mixed-Signal Digital CMOS eNVM Image Sensor

(X-Ray & Visible)

Image Sensor

(X-Ray & Visible)

eNVM Image Sensor

(X-Ray & Visible)

RFCMOS and SOI CMOS

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RF CMOS and SiGe BiCMOS

 Cell Phone, WiFi TxRx

 Basestation, Specialty Wireless

 TV, Satellite, STB Tuners

High Performance SiGe

 Optical Fiber Networks

 Automotive Radar

 60 GHz WiFi, 24GHz Backhaul

 Light Peak and Thunderbolt

 GPS LNA

SOI Switch and SiGe Power Amplifiers

 Power Amplifiers

 Antenna Switch

 PA Controllers

Complementary BiCMOS

 Line Drivers DSL, HomePlug, ATE

 HDD PreAmp

 DAC, ADC

RF and HPA Applications and Technology

Best-in-class SiGe, RF CMOS, RF models and Design Enablement

RF and Tuners

_{Front-End Modules}

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RF CMOS Controller Platform

 5V, 0.18um optimized CMOS

 Up to 50% die size shrink vs. 0.25um

 1.8V Logic, Bipolar, LDMOS options

SiGe PA, through-silicon-via (TSV), IPD

 SiGe PA cells for WiFi and Cellular

 TSV for low-inductance ground

 1.8/3.3/5V CMOS, high res options

 IPD (5um dual-Cu in development)

Platform for integration of FEM

 Thin-Film SOI (best in class Ron-Coff)

 Thick-Film SOI for ease of integration

 5V control, LNA, PA/Driver options

Models, design tools and IP

 Example: PA Design Library (PADL)

 Example: 4T, 6T, 9T SOI Switch IP

 Analog / RF Design Services

Front-End Module Technology

Best-in-class SiGe, RF CMOS, RF models and Design Enablement

Controller

_{SOI Switch}

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Schematic of Key Features in SiGe BiCMOS platform

 The SiGe HBJTs are embedded into complimentary

BiCMOS platforms offering high performance RF , analog and digital performances.

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SiGe HBJT device structure

 The high-performance bipolar transistors are built “vertically”

meaning that the n-p-n structure is created perpendicularly from the top of the wafer down.

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TowerJazz High Speed SiGe Processes

SBC18HA SBC18H2 SBC18H3 SBC13HA SBC13H3

Status Prod. Prod. Proto. Proto. Devel. CMOS Voltages 1.8/3.3V 1.8/3.3V 1.8/3.3V 1.2/3.3V 1.2/3.3V HS Bipolar F_T (GHz) 150 200 240 200 240 F_MAX (GHz) 190 200 270 200 270 BV_CEO (V) 2.2 1.9 1.6 1.9 1.6 Capacitor fF/µm2 _2.8/5.6 _2/4 _2.8/5.6 _2.8/5.6 _2.8/5.6 Varactor Q at 20 GHz ₁₀ _NA ₁₅ _NA ₁₅ LPNP Beta 32 7 30 7 30

 There are numerous other SBC18 flavors in production with

variations in back end configuration, selection of available devices etc.

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SiGe HBJT’s current and power gain

 240 GHz Ft / 270 GHz Fmax devices in mass production.

 High frequency performances sustained for wide collector current range. 0.1 1 10 0 50 100 150 200 250 SBC18H2 SBC18H3 F PEA K T (GH z ) J_C (mA/µm2) V_CB = 0.5V F_MEAS=20GHz 3µm Emitter 122 Device 0.1 1 10 0 50 100 150 200 250 300 SBC18H2 SBC18H3 F PEA K MA X (GH z ) J_C (mA/µm2) V_CB = 0.5V F_MEAS=20GHz 3µm Emitter 122 Device

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SiGe HBJT’s gain vs DC power density

 TowerJazz Devices are optimized for low power consumption.

0.1 1 10 5 10 15 20 _SBC18H2 SBC18H3 70% Lower Power U G at 28GH z (d B ) DC Power Density (mW/µm2) 0.1 1 10 0 5 10 15 20 SBC18H2 SBC18H3 h 21 at 28GH z (d B ) DC Power Density (mW/µm2) 35% Lower Power

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SiGe HBJT’s Noise

0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 9 10 SBC18H2 SBC18H3 NF MIN (d B ) Frequency (GHz) -1.3dB 0 2 4 6 8 10 12 14 16 18 0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.13x20 µm Single Emitter, Dual Base, Dual Collector

40 GHz 32 GHz 20 GHz NF MI N (d B ) I C (mA) 8 GHz

 SBC18H4 minimum noise figure at 20Ghz is measured less than 1dB and at 40GHz at only 2dB.

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Circuit examples at ~100GHz: LNAs

5 6 7 8 9 10 11 12 13 14 15 70 75 80 85 90 95 100 105 110 Measur ed R ec eiv er NF (d B) Input RF Frequency (GHz) Receiver NF - Element 1 (H3) Receiver NF - Element 2 (H3) Receiver NF - Element 3 (H3) Receiver NF - Element 4 (H3) Receiver NF - Element 1 (H2) Receiver NF - Element 2 (H2) Receiver NF - Element 3 (H2) Receiver NF - Element 4 (H2) 0 5 10 15 20 25 30 35 40 70 75 80 85 90 95 100 105 110 Me as ur ed R ec eiv er Gain (dB) Input RF Frequency (GHz) Receiver Gain - Element 1 (H3) Receiver Gain - Element 2 (H3) Receiver Gain - Element 3 (H3) Receiver Gain - Element 4 (H3) Receiver Gain - Element 1 (H2) Receiver Gain - Element 2 (H2) Receiver Gain - Element 3 (H2) Receiver Gain - Element 4 (H2)

SBC18H2

 Broad band mm-wave LNAs fabricated in SBC18H2 and SBC18H3

 4 identical LNAs built for a 4-channel W-band phased-array receiver

 Nearly 30dB of gain above noise floor at 85GHz

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RF Grounding:

Deep Silicon Vias vs. Through Silicon Vias

 Deep Silicon Vias and Through Silicon Vias are available for enhanced RF grounding.

Metal 1

Backside Metallization

Through-Silicon Vias

~100um

Deep Silicon Vias

~10um Metal 1 Backside Metallization p++ handle wafer p- Epi emitter collector ~1 5 0 um

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Bipolar Roadmap

 next generation (SBC18H4) is in final development stage ,Fmax=350Ghz , improved noise figure.

 SiGe NPN on thick film SOI under development.

1 10 0 100 200 300 SBC18H2 SBC18H3 SBC18H4 (prototype) F PEA K MA X (GH z ) J_C (mA/µm2) V_CB = 0.5V F_MEAS=20GHz 3µm Emitter 122 Device 0 10 20 30 40 50 0 1 2 3 4 5 SBC18H2 SBC18H3 SBC18H4 (Prototype) NF MI N (d B ) Frequency (GHz) 0.13x20um 122 Device V BE=0.825V

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Summary

 TowerJazz offer SiGe HBJT devices on 0.35µm, 0.18µm and 0.13µm technology nodes.

 TowerJazz SiGe HBJT offers Best in class SiGe Speed / Power and Best in class Noise.

 The SiGe HBJTs are embedded into complimentary

BiCMOS platforms offering high performance RF, analog and digital performances.

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Complete SBC18H3 Device Roster

Family Device Characteristics

CMOS 1.8V CMOS Model-exact copy of all other TJ 0.18um CMOS 3.3V CMOS

Bipolar HS NPN 240 GHz F_T / 280 GHz F_MAX STD NPN 55GHz F_T / 3.2V BV_CEO

LPNP b=35

Resistors Poly 235 W/sq and 1000 W/sq Metal 25 W/sq TiN on M3

Capacitors Single MIM 2 or 2.8 fF/µm2

Stacked MIM 4 or 5.6 fF/µm2

Varactors 1.8V MOS Q @ 20GHz = 20

Hyper-abrupt junction Q @ 20GHz =15, Tuning Ratio = 21%

RF Diodes p-i-n Isolation <-15dB, Insertion loss > -3.5dB at 50GHz Schottky F > 800 GHz

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SiGe HBJT basic layout-122 configuration

AA, EP BP SC AREA2 XN AA WN EW WN N+ for Nsub WN N+ for Nsub STI STI SC Implant SiGe-Based layer EW Emitter Poly

Collector Base Emitter Base Collector

Native P-sub WN N+ for Nsub WN N+ for Nsub STI STI SC Implant SiGe-Based layer EW Emitter Poly