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Power MOSFET FEATURES. IRF840APbF SiHF840A-E3 IRF840A SiHF840A

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Fig. 4 - Normalized On-Resistance vs. Temperature10210191065_01BottomTopVGS15 V10 V8.0 V7.0 V6.0 V5.5 V5.0 V4.5 V20 µs Pulse WidthTC = 25 °C4.5 VVDS, Drain-to-Source Voltage (V)ID, Drain-to-Source Current (A)
Fig. 8 - Maximum Safe Operating Area1110210310291065_05Capacitance (pF)VDS, Drain-to-Source Voltage (V)CissCrssCossVGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd1010105104103
Fig. 10b - Switching Time Waveforms
Fig. 13a - Typical Drain-to-Source Voltage vs.
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