Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Parameter Max. Units

VCES Collector-to-Emitter Breakdown Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 23

IC @ TC = 100°C Continuous Collector Current 12 A

ICM Pulsed Collector Current Q 92

ILM Clamped Inductive Load Current R 92

VGE Gate-to-Emitter Voltage ± 20 V

EARV Reverse Voltage Avalanche Energy S 10 mJ

PD @ TC = 25°C Maximum Power Dissipation 100

PD @ TC = 100°C Maximum Power Dissipation 42

TJ Operating Junction and -55 to + 150

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4BC30UPbF

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 95169

E C

G

n-channel

V

= 600V

V

=

1.95V

@VGE = 15V, IC = 12A

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 1.2

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient, typical socket mount ––– 80

Wt Weight 2 (0.07) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

TO-220AB

Features

• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• Industry standard TO-220AB package

• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

Benefits

www.irf.com

1

IRG4BC30UPbF

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) — 50 75 IC = 12A

Qge Gate - Emitter Charge (turn-on) — 8.1 12 nC VCC = 400V See Fig.8

Qgc Gate - Collector Charge (turn-on) — 18 27 VGE = 15V

td(on) Turn-On Delay Time — 17 —

tr Rise Time — 9.6 — TJ = 25°C

td(off) Turn-Off Delay Time — 78 120 IC = 12A, VCC = 480V

tf Fall Time — 97 150 VGE = 15V, RG = 23Ω

Eon Turn-On Switching Loss — 0.16 — Energy losses include "tail"

Eoff Turn-Off Switching Loss — 0.20 — mJ See Fig. 10, 11, 13, 14

Ets Total Switching Loss — 0.36 0.50

td(on) Turn-On Delay Time — 20 — TJ = 150°C,

tr Rise Time — 13 — IC = 12A, VCC = 480V

td(off) Turn-Off Delay Time — 180 — VGE = 15V, RG = 23Ω

tf Fall Time — 140 — Energy losses include "tail"

Ets Total Switching Loss — 0.73 — mJ See Fig. 13, 14

LE Internal Source Inductance — 7.5 — nH Measured 5mm from package

Cies Input Capacitance — 1100 — VGE = 0V

Coes Output Capacitance — 73 — pF VCC = 30V See Fig.7

Cres Reverse Transfer Capacitance — 14 — ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.63 — V/°C VGE = 0V, IC = 1.0mA

— 1.95 2.1 IC = 12A VGE = 15V

VCE(ON) Collector-to-Emitter Saturation Voltage — 2.52 — IC = 23A See Fig.2, 5

— 2.09 — IC = 12A , TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA

gfe Forward Transconductance U 3.1 8.6 — S VCE= 100V, IC = 12A

— — 250 VGE = 0V, VCE = 600V

— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

ICES Zero Gate Voltage Collector Current

V

µA

Switching Characteristics @ T

= 25°C (unless otherwise specified)

ns

ns

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,

(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

IRG4BC30UPbF

Fig. 1

- Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

Fig. 2

- Typical Output Characteristics

Fig. 3

- Typical Transfer Characteristics

1 1 0 1 0 0

0.1 1 1 0

C E

C

I

,

C

ol

le

ct

or

-t

o-E

m

itt

er

C

ur

re

nt

(A

)

V , C o lle cto r-to -E m itte r V o lta g e (V )

T = 1 50 °C T = 2 5°C

J J

V = 1 5 V

2 0 µ s P U LS E W ID T H G E A 0.1 1 1 0 1 0 0

5 6 7 8 9 1 0 1 1 1 2

C

I

, C

ol

le

cto

r-to

-E

m

itt

er

C

ur

re

nt

(

A

)

G E

T = 2 5 °C T = 1 50 °C

J J

V , G a te -to -E m itte r Vo lta g e (V )

A

V = 10 V 5 µ s P U L S E W ID T H C C 0

5 1 0 1 5 2 0 2 5 3 0 3 5

0.1 1 1 0 1 0 0

f, Frequency (kHz)

A

6 0 % o f ra te d v o lta g e

I

Id e al d io de s S qu are wave:

F o r b o th : D uty cycle: 50% T = 125°C T = 90°C Gate drive as specifiedsink

J

Trian gu la r w a ve: I

C la m p vo lta g e : 8 0 % o f ra te d Po w e r D is s ip a tio n = 2 1 W

IRG4BC30UPbF

Fig. 6

- Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5

- Collector-to-Emitter Voltage vs.

Junction Temperature

Fig. 4

- Maximum Collector Current vs. Case

Temperature

1.5 2.0 2.5 3.0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

CE

V

,

C

olle

ct

or

-t

o-E

m

itt

er

V

olt

a

ge

(

V

) V = 1 5 V

8 0 µ s P U LS E W ID T HG E

A

T , Ju n ctio n T e m p e ra tu re (°C )_J

I = 2 4 A

I = 1 2 A

I = 6 .0 AC C C

0.01 0.1 1 10

0.00001 0.0001 0.00 1 0.01 0.1 1 10

t , R ectangular P ulse D ura tion (sec)1

th

JC

D = 0 .5 0

0 .0 1 0 .0 2 0 .0 5 0 .1 0 0 .2 0

S IN G L E P U L S E (T H E R M A L R E S P O N S E )

T

he

rm

al

R

es

pons

e (

Z

)

P

t 2 1 t

D M

N o te s : 1 . D u ty fa c to r D = t / t

2 . P e a k T = P x Z + T

1 2

J D M th J C C

0 5 1 0 1 5 2 0 2 5

2 5 5 0 7 5 1 0 0 1 2 5 1 5 0

Ma

x

im

u

m

D

C

C

o

lle

c

to

r Cu

rr

e

n

t (

A

T , C a se Te m p e ra tu re (°C )_C

V = 1 5 V G E

IRG4BC30UPbF

Fig. 10

- Typical Switching Losses vs.

Junction Temperature

Fig. 9

- Typical Switching Losses vs. Gate

Resistance

Fig. 8

- Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 7 -

Typical Capacitance vs.

Collector-to-Emitter Voltage

4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0

1 1 0 1 0 0

C E C , C a pac ita n ce (p F )

V , C o lle cto r-to -E m itte r V o lta g e (V )

A

V = 0V , f = 1M H z

C = C + C , C S H O R TE D C = C

C = C + C G E

ies ge gc ce res gc

oes ce gc C ies

C

C

0 4 8 1 2 1 6 2 0

0 1 0 2 0 3 0 4 0 5 0

GE V , G ate -t o -E m itt er V ol ta g e ( V ) g

Q , To ta l G a te C h a rg e (n C )

A

V = 4 0 0V I = 12 AC EC

0.2 0.3 0.4 0.5

0 1 0 2 0 3 0 4 0 5 0 6 0

G T o ta l S w itc h in g L o ss e s ( m J)

R , G a te R e sista n ce (_Ω)

A

V = 4 8 0V V = 1 5 V T = 2 5 °C I = 12 A

C C G E J C 0.1 1 1 0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

T o ta l S w itc h in g L o ss e s ( m J) A I = 6 .0 A I = 1 2 A I = 2 4 A R = 2 3 Ω

V = 1 5V V = 4 80 V

C C C

J

T , Ju n ctio n T e m p e ra tu re (°C )

G G E C C

IRG4BC30UPbF

Fig. 12

- Turn-Off SOA

Fig. 11 -

Typical Switching Losses vs.

Collector-to-Emitter Current

0.4 0.8 1.2 1.6

0 1 0 2 0 3 0

C

T

o

ta

l S

w

itch

in

g

Los

se

s (

m

J)

I , C o lle cto r-to -E m itte r C u rre n t (A )

A R = 23 Ω

T = 1 50 °C V = 48 0 V V = 15 V

G J C C G E

0.1 1 10 100 1000

1 10 100 1000

C

C E

G E

V , Collecto r-to-Em itter Voltage (V)

I

,

C

ol

le

ct

or-t

o-E

m

itt

er C

urre

nt

(A

)

S A FE O P E R A TING A R E A V = 20V

IRG4BC30UPbF

480V 4 X IC@25°C

D.U.T. 50V

L V *_C

Q

R * Driver sam e type as D .U .T.; Vc = 80% of V ce(m ax)

* Note: D ue to the 50V pow er supply, pulse width and inductor w ill increase to obtain rated Id.

1000V

Fig. 13a

-

Fig. 13b

-

480µF 960V 0 - 480V

RL =

t=5µs d (o n)

t

tf tr

90%

td(o ff) 10%

90%

10% 5% VC

IC

Eo n Eo ff

ts o n off E = (E +E )

Q

R

S

Fig. 14b

-

D river* 1000V

D.U.T. I_C

C V

Q

R S

L

Fig. 14a

-

IRG4BC30UPbF

LEAD AS SIGNME NTS 1 - GATE 2 - DRA IN 3 - SOURC E 4 - DRA IN B

-1.32 (.052) 1.22 (.048)

3X0.55 (.022)_{0.46 (.018)} 2.92 (.115) 2.64 (.104) 4.69 (.18 5)

4.20 (.16 5)

3X0.93 (.037)_{0.69 (.027)} 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240)

3.78 (.149) 3.54 (.139) A -10.54 (.415)

10.29 (.405) 2.87 (.113 )

2.62 (.103 )

1 5.24 (.600) 1 4.84 (.584)

14.09 (.555) 13.47 (.530)

3 X1.40 (.055)_{1.15 (.045)}

2.54 (.100) 2X

0.36 (.014) M B A M 4

1 2 3

NOTES:

1 DIME NSIONING & TO LE RANC ING P ER ANSI Y14.5M, 1982. 3 O UTLINE CONF ORMS TO JE DEC OUTLINE TO -220AB . 2 CO NTROLLING DIM EN SIO N : INCH 4 HEA TSINK & LE AD M EASU RE MENTS D O NO T INCLUD E BU RRS.

H EXF ET 1- GA TE 2- DR AIN 3- SO UR C E 4- DR AIN

LEA D ASS IG N MEN TS IG BT s, CoP AC K 1- GA TE 2- CO LLEC TO R 3- EMITT ER 4- CO LLEC TO R

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

E X AM P L E :

IN T H E AS S E M B L Y L IN E "C" T H IS IS AN IR F 1 01 0 L OT COD E 1 78 9

AS S E M B L E D O N W W 1 9, 19 9 7 P AR T N U M B E R

AS S E M B L Y L OT COD E

D AT E CO D E Y E AR 7 = 1 9 97 L IN E C W E E K 19 L OGO

R E CT IF IE R IN T E R N AT IO N AL

Note: "P " in assem bly line

position indicates "Lead-Free"

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/