• No results found

1550 Nm

High Speed VCSEL Transmission at 1310 nm and 1550 nm Transmission Wavelengths

High Speed VCSEL Transmission at 1310 nm and 1550 nm Transmission Wavelengths

... 1310 nm and 1550 nm are very promising sources for access and interconnections in telecommunication systems due to their technologically attractive properties such as low threshold currents and ...

7

Performance of 1550 nm VCSEL at 10 Gb/s in G.655 and G.652 SSMF

Performance of 1550 nm VCSEL at 10 Gb/s in G.655 and G.652 SSMF

... 850-980 nm VCSEL at low power have made them the light source of ...(1300-1600 nm) laser diodes are required in order to operate with low loss and dispersions ...1310 nm and 1550 nm ...

5

Ge-on-Si Single-Photon Avalanche Diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

Ge-on-Si Single-Photon Avalanche Diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

... 1000 nm, efficient detection at wavelengths greater than this remains more problematic despite the commercial availability of some single-photon ...and 1550 nm) and operational at or near room ...

8

Polarization and time-resolved dynamics of a 1550-nm VCSEL subject to orthogonally polarized optical injection

Polarization and time-resolved dynamics of a 1550-nm VCSEL subject to orthogonally polarized optical injection

... comparison purposes. Fig. 5(a) reveals the simultaneous occurrence of periodic dynamics (P1) in both polarizations. The electrical spectra computed from the FFT of both time series is included in Fig. 5(b) and reveals ...

10

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

... a 1550-nm excitation wavelength for Fe- doped InGaAsP emitters with different doping concentrations compared to similar results obtained from Fe-doped InGaAs ...

11

Ge on Si single photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

Ge on Si single photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

... ∼1600 nm at 300 K [12], and some work has been performed on all-Ge SPADs ...or 1550 nm wavelengths ...1000 nm wavelength—i.e., only < 0.01% SPDE at λ = 1210 nm was reported ...

8

Testing of the Entangled QKD System EPR S405 Quelle (AIT) in Commercial 1550 nm Fiber Network

Testing of the Entangled QKD System EPR S405 Quelle (AIT) in Commercial 1550 nm Fiber Network

... 405 nm laser beam which generates pairs of photons of 810 nm ...810 nm fits to the so-called first telecommunication window, which was suitable to trans- mit light within 800 - 900 nm ...1300 ...

7

Sensitive SERS nanotags for use with 1550 nm (retina-safe) laser excitation

Sensitive SERS nanotags for use with 1550 nm (retina-safe) laser excitation

... To fully understand the SERS capabilities of these nanotags, they were compared with commercially available tags. These nanotags consist of large AuNPs (~100 nm in size) encapsulated with the non-resonant reporter ...

7

Measurement of the specific surface area of snow using infrared reflectance in an integrating sphere at 1310 and 1550 nm

Measurement of the specific surface area of snow using infrared reflectance in an integrating sphere at 1310 and 1550 nm

... or 1550 nm radiation of laser diodes, an integrating sphere 15 cm in diameter, and InGaAs ...1310 nm ra- diation, reflectance is between 15 and 50% and the accuracy of SSA determination is ...1310 ...

16

1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature

1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature

... For dark counts and photon counts measurements, the device-under-test was operated in gated mode, as is common for SPADs sensitive to 1550 nm lights. The setup used is shown schematically in Fig. 2 and the ...

8

PAM-4 transmission at 1550 nm using photonic reservoir computing post-processing

PAM-4 transmission at 1550 nm using photonic reservoir computing post-processing

... In section III, we evaluate the data recovery performance versus the reservoir operating point, the properties of the transmission signal in terms of OSNR and launched optical peak power[r] ...

9

CMAS: Fully integrated portable Centrifugal Microfluidic Analysis System for on-site colorimetric analysis

CMAS: Fully integrated portable Centrifugal Microfluidic Analysis System for on-site colorimetric analysis

... A unique function of CMAS is the modular PEDD alignment/detection configuration wherein the electronic boards, along with the PEDD devices, are easily interchangeable, thus allowing a wide range of centrifugal ...

28

Sensors for Harsh Environment: Radiation Resistant FBG Sensor System

Sensors for Harsh Environment: Radiation Resistant FBG Sensor System

... Abstract—This paper presents radiation resistant characteris- tics of fibre Bragg grating (FBG) sensors written in a photosensitive fiber and connected to a silica core radiation resistant optical fibre, aiming to ...

7

Multiple Layers of Silicon-Silica (Si-SiO2) Pair onto Silicon Substrate towards Highly Efficient, Wideband Silicon Photonic Grating Coupler

Multiple Layers of Silicon-Silica (Si-SiO2) Pair onto Silicon Substrate towards Highly Efficient, Wideband Silicon Photonic Grating Coupler

... and actual guided wave for high coupling efficiency. Based on the results, an optimal design is developed and modeled by using a 2-D finite difference time domain (2-D FDTD) simulator that dictates a coupling efficiency ...

12

Title: Performance Evaluation of EPON Link at 1550 and 1350 nm using NRZ and RZ Modulation Technique

Title: Performance Evaluation of EPON Link at 1550 and 1350 nm using NRZ and RZ Modulation Technique

... The research work has evaluated the performance of the proposed link in terms of Q- Factor and BER at wavelength of 1550 nm and 1350 nm at transmission distance of 30 km. The comparison has also been ...

10

SME DEVELOPMENT BASED ON INFORMATION AND COMMUNICATION TECHNOLOGY TO GLOBAL 
MARKET IN DISTRICT KENDAL

SME DEVELOPMENT BASED ON INFORMATION AND COMMUNICATION TECHNOLOGY TO GLOBAL MARKET IN DISTRICT KENDAL

... Optical power attenuation is a usual phenomenon in optical fibre industries. The attenuation might be caused by absorption [1], scattering [1][2][3], dispersion[4][5], bending[6], core and cladding [7], splicing and ...

5

Four Wave Mixing Signals Generation at 25 dBm High Power EDFA

Four Wave Mixing Signals Generation at 25 dBm High Power EDFA

... Launching two input signals in a same optical fiber theoretically will generate FWM. FWM is also a parametric interaction among waves satisfying phase matching. It is a process of energy conversion taken by the photon ...

5

Structure and propagation of modes of large mode area holey fibres

Structure and propagation of modes of large mode area holey fibres

... Figures 4 and 5 show cross-sections of the 1550 nm beam emerging from the end face of the LMA fiber. The cross-sections are measured by first mapping the position of the end face of the fiber using shear ...

6

NM and extended schools

NM and extended schools

... Although this case study involves a Children’s Centre, and the role NM has played in its development, the lessons are easily transferred to the context of an extended school. The school described here already ...

40

Mobiliteit in stadsbesturen, 1400-1550 [Mobility in city magistracies].

Mobiliteit in stadsbesturen, 1400-1550 [Mobility in city magistracies].

... Ook voor het middenniveau zijn minder namen overgeleverd dan voor de hoogste functies, maar wel blijkt frappant het versch» voor hen die zes en meer aanstellingen verwierven: 51% van de [r] ...

25

Show all 3586 documents...

Related subjects