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charge-trapping

Charge trapping and super-Poissonian noise centers in a cuprate high-temperature superconductor

Charge trapping and super-Poissonian noise centers in a cuprate high-temperature superconductor

... In summary, we have presented direct evidence for the existence of slow charge trapping processes at defect sites in the form of the localized super-Poissonian noise signals. These are reminiscent of ...

12

Signals induced by charge-trapping in EDELWEISS FID detectors: Analytical modeling and applications

Signals induced by charge-trapping in EDELWEISS FID detectors: Analytical modeling and applications

... where the latter expression highlights the fact that the correction to A(t) does not affect the magnitude of the signal since the added term is zero irrespective of the origin of the signal. In [16], this correction was ...

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Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems

Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems

... trapped charge in the switching of the measurement equipment ...trapped charge. Charge pumping (CP) was shown to be an excellent process monitoring tool for measuring trapped charge where ...

170

Electronic Structure and Charge Trapping Characteristics of the Al2O3 TiAlO SiO2 Gate Stack for Nonvolatile Memory Applications

Electronic Structure and Charge Trapping Characteristics of the Al2O3 TiAlO SiO2 Gate Stack for Nonvolatile Memory Applications

... device structure. The nonvolatile memory device using TiAlO composite film as charge-trapping material shows significant memory effect and excellent long-term charge stability. Although further work ...

7

Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

... The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance ...

5

Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility

Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility

... inversion charge and subsequent decrease in channel resistance [1] which leads to increase in on-current and hence improvement in performance (ii) better short channel control, since short channel control is ...

187

Space charge and charge trapping characteristics of cross linked polyethylene subjected to ac electric stresses

Space charge and charge trapping characteristics of cross linked polyethylene subjected to ac electric stresses

... positive charge of four different samples at various times after the removal of ...positive charge in sample A and dc-sample C decays more rapidly than those of dc-samples D and ...trapped charge is ...

9

Origin of charge trapping in TiO2/reduced graphene oxide photocatalytic composites : insights from theory

Origin of charge trapping in TiO2/reduced graphene oxide photocatalytic composites : insights from theory

... in charge density in the σ orbitals of the same atoms, indicating a shift in electron density from the π system to local σ bonding upon forming the ...of charge density on the epoxide groups but almost none ...

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Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates

Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates

... We should also point out that the relatively high density of pre-existing trapping states, i.e., as high as cm in areal density, or equivalently cm in volume density, is expected to be significantly enhanced by O ...

5

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

... electron trapping due to substrate injection under positive irradiation ...diation-induced charge trapping relative to previous Hf ...oxide-trap charge density than earlier Hf silicate films ...

7

Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory

Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory

... This paper reports the fabrication of quaternary NiZrSiGe NCs to be used as the charge trapping material of flash memory by using the sol-gel spin coating method. TEM image analysis was used to confirm the ...

9

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

... To characterize the charge trapping along the surface, single pulse gate lag measurements were performed. In the pulse measurements, the device was biased by a dc voltage source in the off-state below the ...

8

Modeling and Simulation of SONOS with Optimized Layer Thickness for Obtaining The Properties of Ideal Non-Volatile Memories

Modeling and Simulation of SONOS with Optimized Layer Thickness for Obtaining The Properties of Ideal Non-Volatile Memories

... This layer tunnels the charge carriers from substrate into charge-trapping layer. Speed and data retention are affected by tunneling layer. In the SONOS devices, thin silicon dioxide is typically ...

6

Available online:  https://edupediapublications.org/journals/index.php/IJR/  P a g e | 5674     Design of Aging-Aware Reliable Multiplier with Adaptive Hold Logic Using Variable Latency Techniqu

Available online: https://edupediapublications.org/journals/index.php/IJR/ P a g e | 5674 Design of Aging-Aware Reliable Multiplier with Adaptive Hold Logic Using Variable Latency Techniqu

... oxide/polygate transistors, and therefore is usually ignored. However, for high-k/metal- gate nMOS transistors with significant charge trapping, the PBTI effect can no l[r] ...

12

Negative Capacitance beyond Ferroelectric Switches

Negative Capacitance beyond Ferroelectric Switches

... with charge trapping at oxide/semiconductor interfaces that leads to a reduction in the drain current during the backward sweep, 21 the anticlockwise hysteresis in the transfer characteristics, as well as ...

27

Ultrafast charge dynamics in trap free and surface trapping colloidal quantum dots

Ultrafast charge dynamics in trap free and surface trapping colloidal quantum dots

... suffi cient to act as a barrier to the surface and the carrier wave function becomes more extended, increasing interaction with the surface in any case. Additionally, thick shells can act as barriers to band edge ...

8

INVESTIGATION OF THERMALLY STIMULATED DISCHARGE CURRENT ARISED DUE TO PURE AND DOPED ETHYL CELLULOSE

INVESTIGATION OF THERMALLY STIMULATED DISCHARGE CURRENT ARISED DUE TO PURE AND DOPED ETHYL CELLULOSE

... of charge transfer complex in pure and iodine doped samples of ethyl cellulose at poling temperature 80 o ...energy, charge released and relaxation times were calculated for pure and doped ...doping, ...

8

Enhanced Trapping of HIV 1 by Human Cervicovaginal Mucus Is Associated with Lactobacillus crispatus Dominant Microbiota

Enhanced Trapping of HIV 1 by Human Cervicovaginal Mucus Is Associated with Lactobacillus crispatus Dominant Microbiota

... enhanced trapping of viruses via hydrogen bonding to mucins at low pH, (ii) direct inactivation of cell-free or cell-associated HIV through secreted lactic acid (24), and (iii) inhibition of other bacteria that ...

9

Rearrangement and trapping of organozinc carbenoids.

Rearrangement and trapping of organozinc carbenoids.

... The suspension was heated at reflux for 22 hours and the cooled to ambient temperature and poured into saturated aqueous sodium bicarbonate (500 ml).The resultant suspension was sti[r] ...

240

Thermoluminescence Properties of Gamma and C5+ Ion Beam Irradiated Sr2(1-X)(Dy,Na)Xznwo6 Phosphors

Thermoluminescence Properties of Gamma and C5+ Ion Beam Irradiated Sr2(1-X)(Dy,Na)Xznwo6 Phosphors

... The nature of glow curve for doped samples is of complex nature and consisting of three distinguishable and overlapping glow peaks. The glow curve has prominent glow peak at low temperature at 378 K one small shoulder ...

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