Contact resistivity
Effect of Transmission Line Measurement (TLM) Geometry on Specific Contact Resistivity Determination
... use contact resistivity as a measure of device ...as contact silicidation, doped-metal contacts, dipole inserted contacts ...specific contact resistivity and improve device ...specific ...
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Contact resistivity and transport properties in lateral germanium nanowire devices
... In tro d u ctio n of shallow d o p an ts into a sem iconducting m aterial su b sta n tially increases its conductivity, since th eir ionization energies E] are com pa rable to th e therm al energy k s T , and th u s ...
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TUNING PARAMETERS OF METAL- SEMICONDUCTOR CONTACT AND THEIR INFLUENCE IN OPTICAL GAIN
... its contact fabrication methodology. Contact fabrication techniques are based on detailed studies on the behaviour of metal- semiconductor (M-S) ...ohmic contact between a metal and a semiconductor ...
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Germanosilicide Contacts to Ultra-shallow P+N Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys
... and contact formation technologies to produce ultra-shallow junctions with super- abrupt doping profiles, above equilibrium dopant activation and contact resistivity values near 10 -8 ohm-cm 2 ...
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The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
... The contact resistivity obtained on diamond, however, remains large and must be reduced if high performance electronic devices are to be fabricated.. Sputtered TaSi[r] ...
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Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits.
... It can be seen that the hole barrier height increases by 68 meV for 1.2% C, which indicates that the pinning loca- tion of the metal Fermi level moves to higher energy levels with increasing carbon concentration. This ...
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Nickel Silicide as a Contact and Diffusion Barrier for Copper Metallization in Silicon Photovoltaics
... metal contact, the base, the emitter, the front metal contact, the fingers and the ...or contact resistances, are more ...of contact on the solar cell front, the resistance associated with the ...
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LIGHT SOAKING STUDIES ON METAL- SEMICONDUCTOR CONTACTS
... obtain contact resistivity of metal-semiconductor (M-S) contact, based on the values of ideality factor and barrier height which are obtained from Current–voltage (I-V) characteristics of the M-S ...
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A MATHEMATICAL MODEL FOR CURRENT IN METAL- SEMICONDUCTOR CONTACT
... Metal-semiconductor contact (M-S) contact is normally ...ohmic contact on the surface of semiconducting material is an art rather than ...ohmic contact between a metal and a semiconductor is ...
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Gallium-Doped Zinc Oxide as a Conductive Antireflection Coating for Silicon Solar Cell Applications.
... the contact resistivity values fall to statistically (by averaging over many measurements) similar values of ...of contact resistivity ...a contact resistivity value that is ...
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ABSTRACTS: July 1992165-171
... The reduction in the contact resistivity is explained by formation of a n + GaAs surface layer via solid-phase regrowth. The modified contacts show uniform surface a[r] ...
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Neural Network for Mapping Full Time Apparent Resistivity Solution from TEM Electromotive Force Data
... apparent resistivity of the induced electromotive force observed by the transient electromagnetic (TEM) in center loop is proposed by using the neural ...the resistivity of the transient electromagnetic ...
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Phenomenon of Maximum and Minimum in the Resistivity of Cu-Mn Kondo Alloys at Low Temperatures
... After about 30 years, theoretically, the problem of the resistivity minimum in dilute magnetic alloys was started and discovered by Kondo in 1964[5], and followed by many papers [6, 7, 8]. Since then, Kondo ...
5
Low resistivity contact to iron-pnictide superconductors
... low resistivity electrical connection between an electrical conductor and an iron pnictide superconductor involves connecting the electrical conductor and superconductor using a tin or tin-based material ...
12
Mechanically Stable Nano-graphite Polyaniline Composites: Synthesis and Characterization
... The electrical resistivity of the composites was measured using four probe method. Conductivities of samples were then calculated using average of resistivity values[r] ...
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Implementation of earth conductivity experiment to evaluate underground parameters
... Ground conductivity is a well-known parameter since it is commonly used for the grounding system for the building. However, the effect of solar variation to the ground conductivity is not well interrogated by the ...
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A Hydro-Geophysical Investigation of Groundwater Potential
... ground resistivity [1], ...Electrical resistivity method is one of the geophysical techniques to investigate the nature of subsurface formations, by studying the variations in the electrical properties of ...
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Electrical Transport Properties of La BaTiO3
... The resistivity is strongly depended on the degree of previous reduction, before the measurements of electrical resistivity, the sam- ple was heated in atmosphere which possessed a well- defined partial ...
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Change in Electrical Resistivity of Pure Cu Processed by Accumulative Roll Bonding
... electrical resistivity at 77 K was as- sociated with both the change in dislocation density and the density of GB, which is different from the case of Al since change in GB was the main reason for the change in ...
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The Role of Annealing Process in Ag Based BaSnO3 Multilayer Thin Films
... oxide layers [16, 17]. Among metallic materials, Au, Ag, Cu, and Al have been practically used as the thin metal layer because of their very low resistivity [11, 13, 14, 16]. However, both the metal Cu and Al are ...
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