high-current ion implantation
A preparation approach of exploring cluster ion implantation: from ultra thin carbon film to graphene
... The current integrator is used for monitoring implantation dose ...the current integrator from high voltage at decelerated filed, an isolation transformer was introduced to guarantee ...
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Planar InAs photodiodes fabricated using He ion implantation
... 9. High electric fields can be observed across the p-i junction, these fields reach peak values at the corners of the implanted ...the current and potentially causing the failure of the device when stressed ...
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Size evolution of ion beam synthesized Pb nanoparticles in Al
... the current density dependence of the size evolution of Pb ...of implantation flu- ence f with different implantation current ...the implantation current density φ from ...in ...
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The enhanced anticoagulation for graphene induced by COOH+ ion implantation
... in ion source [9,11,13]. These ions were accelerated by a high tension onto the graphene sam- ...During implantation, the ion energy was 20 keV [28]. The beam current density was ...
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The ion implantation induced properties of one dimensional nanomaterials
... by ion implantation in an irradiated material are very different; they are related to the ion species, energy, fluences, beam current, and target ma- ...at high fluences, nanowires ...
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n type chalcogenides by ion implantation
... fabrication; ion implantation, however, is integral to current IC ...by ion implantation in chalcogenide glasses could open up a new branch of electronics based on these ...allowed ...
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High temperature and ion implantation-induced phase transformations in novel reduced activation Si-Fe-V-Cr (-Mo) high entropy alloys
... any current nuclear fission reactor, and maintain their properties whilst subjected to high heat ...the high temperature thermal stability and radiation damage resistance that can be ...
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Investigation of defects formed by ion implantation of H2+ into silicon
... for high temperatures, samples formed by Ion-Cutting on an amorphous substrate may not be annealed so as to completely eliminate all defects within the ...during implantation which react and form ...
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Tantalum/ Nitrogen and n-type WO3 semiconductor/FTO structures as a cathode for the future of nano devices
... the ion energy, current density, irradiation time and the substrate ...regard, ion implantation is one of the prospective ways for changing chemical and physical properties in the near-surface ...
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Planar InAs photodiodes fabricated using He ion implantation
... sufficiently high to electrically isolate the diodes and prevent the voltage from spreading to adjacent ...dark current is dominated by bulk current contributions, the dark current for the ...
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Ion Implantation Induced Martensite Nucleation in SUS301 Steel
... though the total amount of the concentration do not directly affect. By considering these experimental facts, the effects of damage and the implanted ion concentration as main factors would associate with to the ...
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Channeling in Semiconductors and its Application to the Study of Ion Implantation
... The influence of channeling on particle trajectories is most strikingly observed in the significant reduction in the energy loss of the particles passing through [r] ...
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Ion-implantation and analysis for doped silicon slot waveguides
... uses ion implantation in both the fabrication and analysis of erbium-doped slot waveguides, including anneals at different temperatures to investigate the evo- lution of erbium ...
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Antibacterial potency of different deposition methods of silver and copper containing diamond-like carbon coated polyethylene
... , there are concerns regarding a possible toxicity of silver-coated medical devices [10]. Cu on the other hand has been shown to possess outstanding anti- bacterial but nevertheless bio-tolerant features [11, 14]. A ...
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Surface Property Modification of Polylactic Acid by Ion Implantation
... acid surfaces causes surface roughness and an increase in contact angle, and, in turn, the increased.. 44.[r] ...
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Chemical Modification of Titanium Nitride Films via Ion Implantation
... and high friction coefficient and wear ...via ion implantation. Carbon-, aluminum- and chlorine-ion implantation is introduced to describe the difference in the modified microstructure at ...
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2-D Image Diagnostic Technique for Edge Turbulence Using Fast Cameras
... the ion temperature is rather higher than the electron tem- perature and it is necessary to reduce the energy loss due to ion-electron heat ...achieve high electron ...
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Ion implantation of calcium and zinc in magnesium for biodegradable implant applications
... to implantation, the samples were incrementally ground from 120 to 2500 grit SiC paper and then polished with diamond ...dried. Ion implantation was performed at Australian Nuclear Science & ...
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Characterization of ion implanted antimony
... Table 5: Summary of Ion Implanted Buried Layer Process Parameters Process Parameter Version A Version B 600 250 140 50 Implantation Screen Oxide Thickness A Implantation Energy keV Impla[r] ...
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Electrical Properties of Ultrathin Hf Ti O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET
... oxide high-k has been applied in 45- [2], 32-, 22-, and 14-nm technology ...new high-k material with k value greater than that of HfO 2 [3, 4], particularly higher ...
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