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Intersubband transition

Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well

Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well

... pumped intersubband lasers[10] have the disadvantage that an ex- ternal pumping source is ...Recently, intersubband transitions in GaN/AlGaN heterostructures started to attract the attention of researchers ...

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Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation

Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation

... tions are from the upper “excited state” to the upper “ground state” and between the two lower states. How- ever, when close to the splitting minima (at well widths of 17 ML and 23 ML), the converse situation sometimes ...

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Acuna, Guillermo Pedro
  

(2010):


	Far Field and Near Field Terahertz Spectroscopy on Parabolic Quantum Wells.


Dissertation, LMU München: Fakultät für Physik

Acuna, Guillermo Pedro (2010): Far Field and Near Field Terahertz Spectroscopy on Parabolic Quantum Wells. Dissertation, LMU München: Fakultät für Physik

... In the context of this work substantial improvements to the experimental methodology were made. Thus, some experimental aspects will be discussed in detail. The setup employed was specially designed and developed for ...

125

Design of 1 33 μm and 1 55 μm Wavelengths Quantum Cascade Photodetector

Design of 1 33 μm and 1 55 μm Wavelengths Quantum Cascade Photodetector

... DOI: 10.4236/opj.2017.78B016 117 Optics and Photonics Journal lexers [5]. A typical QCD consist of an active region constructed of multiple pe- riods, each containing a thick, highly doped active QW and a nominally un- ...

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Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector

Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector

... the intersubband transitions in quantum dot (QD) [11–13], quantum wire [14, 15], and also the dot-in-a-well structure [16, 17] instead of in a QW in terms of polarization ...

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Intersubband terahertz lasers using four-level asymmetric quantum wells

Intersubband terahertz lasers using four-level asymmetric quantum wells

... using intersubband emission in four-level GaAs/AlGaAs asymmetric ~stepped! quantum ...nonradiative intersubband transitions, and so we have performed detailed calculations of electron– electron and ...

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Microscopic approach for intersubband based thermophotovoltaic structures in the terahertz and mid infrared

Microscopic approach for intersubband based thermophotovoltaic structures in the terahertz and mid infrared

... This paper describes microscopic calculations of photocurrent generation spec- tra due to intersubband transitions in semiconductor heterostructures that can extract energy from photons in the THz and Mid Infrared ...

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Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces

Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces

... We have so far considered the effect of interdiffusion on intersubband transitions of known energies. Interdif- fusion due to growth processes however changes the sub- band separation as well as the scattering ...

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Second harmonic generation at the quantum-interference induced transparency in semiconductor quantum wells: The influence of permanent dipole moments

Second harmonic generation at the quantum-interference induced transparency in semiconductor quantum wells: The influence of permanent dipole moments

... the quantum-interference induced transparency was explored. The analytical model describing the intersubband transitions at large pump intensities was expanded to account for permanent moments. It is shown that ...

5

Effect of the Doping Layer Concentration on Optical Absorption in Si δ Doped GaAs Layer

Effect of the Doping Layer Concentration on Optical Absorption in Si δ Doped GaAs Layer

... the intersubband optical absorption of Si -  doped GaAs for different applied electric fields and various concentrations of the doping layer using a self-consistent procedure to solve the Schrödinger and Poisson ...

5

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

... the intersubband transition energies and the dipole matrix elements in terms of the structural ...level intersubband laser system emitting at ...

5

Absorption Coefficient in a Mqw Intersubband Photodetector with Non-Uniform Doping Density & Layer Distribution

Absorption Coefficient in a Mqw Intersubband Photodetector with Non-Uniform Doping Density & Layer Distribution

... the intersubband transition energy being different for both types of asymmetric structures, their absorption coefficient peak positions also vary with ...of intersubband transition in this ...

9

Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

... near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ ...of ...

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Ultrashort electromagnetic pulse control of intersubband quantum well transitions

Ultrashort electromagnetic pulse control of intersubband quantum well transitions

... In this work, we have studied the electron dynamics of intersubband transitions of a symmetric double quantum well, in the two-subband approximation, that is coupled by a strong pulsed electromagnetic field. We ...

7

The linewidth enhancement factor of intersubband lasers: from a two level limit to gain without inversion conditions

The linewidth enhancement factor of intersubband lasers: from a two level limit to gain without inversion conditions

... The linewidth enhancement (α factor) due to fluctuations in the refractive index induced by carrier fluctuations of intersubband lasers was initially expected to be zero. However, values ranging from -0.5 to 3 ...

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SECONDARY TRANSITION AND TRANSITION SERVICES.docx

SECONDARY TRANSITION AND TRANSITION SERVICES.docx

... While the adult agencies are invited to all IEP transition meetings, they may be unable to participate in meetings before a student’s junior year. In order to ensure participation in as many meetings as possible ...

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Compute method of transition probability of internetware system in chemical and pharmaceutical industry

Compute method of transition probability of internetware system in chemical and pharmaceutical industry

... Suppose Markov chain is composed of m states, and according to software operation, it changes into the sequence composed of these m states. Start from any state, pass any transfer, certainly there will be one state of ...

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A theoretical investigation of organic rearrangements

A theoretical investigation of organic rearrangements

... In essence, the transition structure is similar to the nitrogen transition structure, the major difference between the ylide and the transition geometry being in bond rotation to orient [r] ...

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Carrier scattering approach to the origins of dark current in mid- and far-infrared (terahertz) quantum-well intersubband photodetectors (QWIPs)

Carrier scattering approach to the origins of dark current in mid- and far-infrared (terahertz) quantum-well intersubband photodetectors (QWIPs)

... 4 and 5, therefore, shows that the contribution of electron-LO phonon and electron–electron scattering to the sequential-tunneling component of the dark current increases with increasing[r] ...

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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device

Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device

... the transition rate equations for a mid-infrared quantum cascade laser has been used to calculate the subband populations and transition rates for a nine-level system consisting of two injectors and an ...

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