Molecular beam
Molecular Beam Depletion: A New Approach
... of molecular beam depletion when the molecules of a pulsed beam interact with a static electric or magnetic field and an oscillating field ...the molecular electric or magnetic dipole moment ...
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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
... Abstract The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, ...
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Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
... GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous ...
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Graphitic platform for self catalysed InAs nanowires growth by molecular beam epitaxy
... During the last few years, there have been increasing ef- forts in developing growth of functional hybrid struc- tures of III-V semiconductors on graphene or graphite thin films. In these hybrid structures, the graphene ...
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An atomic carbon source for high temperature molecular beam epitaxy of graphene
... We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source ...
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InN nanorods prepared with CrN nanoislands by plasma assisted molecular beam epitaxy
... The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma- assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between ...
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Graphitic platform for self catalysed InAs nanowires growth by molecular beam epitaxy
... We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically ...
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Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
... Growth of TMD film has been rapidly developing to meet the elevated interests for various ways, such as chemical vapor deposition (CVD), pulsed laser depos- ition, and molecular beam epitaxy (MBE) [5, ...
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Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
... Semiconductor nanowires (NWs) consist of a solid rod with a diameter usually smaller than 100 nm and a length that can vary from the nanometer to the milli- meter-scale depending on the technique used to synthe- size the ...
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Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
... In the last two decades, a number of semiconductor quantum and nanostructures (QNSs) by the strain- driven self-assembly based on Stranski-Krastanow (S-K) growth [1] have been demonstrated in the field of epi- taxial ...
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Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content
... grown by plasma-assisted molecular beam epitaxy (PA- MBE) in a MOD-GENII system. Two-inch diameter sapphire substrates were used. The active nitrogen for the growth of the group III-nitrides was provided by ...
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Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method
... So far, Ge-based alloys were proved to be promising materials for infrared optoelectronic detectors. In 1984, AT& T.Bell Laboratories prepared GeSi film n-i-p de- vices by the molecular beam epitaxy ...
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Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy
... by molecular beam epitaxy (MBE), which includes the observation of electron standing waves on topological insulator surface and the Landau quantization of topological surface ...
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The growth and evaluation of epilayers grown by silicon molecular beam epitaxy
... Silicon Molecular Beam Epitaxy (Si-MBE) is a vacuum evaporation technique in which Si atoms are made to impinge upon a heated, single crystal Si substrate. Under correct evaporation and vacuum conditions a ...
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Constant temperature hot wire anemometry applied to the characterisation of a nozzle molecular beam source
... the molecular beam source with feed-through connections for gas supply, piezo drive, and anemometer probes mounted on a removable flange, as shown in figure ...the beam and scanning it the downstream ...
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Effects of shutter transients in molecular beam epitaxy
... Molecular beam epitaxy (MBE) is an ideal method to grow nano-structures. MBE allows for the controlled growth of films with sharp doping profiles and different chemi- cal compositions changing over a spatial ...
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Dynamics and structure from molecular beam experiments
... excited molecular beam with the bolometei— lock-in-amplifier system it is possible to observe the net laser-induced change in the energy of the molecular ...
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Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
... plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and ...
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Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
... We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, ...
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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
... A crossover from electron- to holedominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing B, characteristic of the complex Fermi surfac[r] ...
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