molecular beam epitaxy-grown
Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
... layers for the complete Al composition range x from 0 up to close to 1. We have used 75 nm cubic GaN buffers to initiate the growth of the cubic phase. In order to sustain the cubic phase during the epitaxy it is ...
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Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy
... nitrogen rich conditions without any catalyst. In those reports the morphologies, density, length and diameter, of NCs were shown to be influenced by growth parameters such as Ga flux [14], substrate type, substrate ...
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Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
... were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on (0001) c-plane sapphire ...samples, grown at varying gallium beam equivalent pressure (BEP) with all other MBE ...
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Electrical characterisation of deep level defects in Be doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
... structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type ...samples grown by molecular beam ...
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Effects of shutter transients in molecular beam epitaxy
... Molecular beam epitaxy (MBE) is an ideal method to grow nano-structures. MBE allows for the controlled growth of films with sharp doping profiles and different chemi- cal compositions changing over a ...
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Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
... were grown on various substrates (Si, Ge, and GaAs) at different temperatures (from room temperature to 150°C) by a PerkinElmer MBE (SVT Associates, formerly Perkin-Elmer, Physical Electro- nics Division, Eden ...
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Pure electron electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
... We have presented the structural and electrical characte- rization of the ultrathin percolating aluminum film grown by MBE. The TEM results indicate a superior crystal qual- ity of the epitaxial aluminum film. WAL ...
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Deep ultraviolet emission in hexagonal boron nitride grown by high temperature molecular beam epitaxy
... samples grown on sapphire, AFM images of the hBN surface (figure 1) show that the hBN epilayers consist of nanocrystalline domains, so that extended defects cannot develop in this type of ...samples grown ...
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Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy
... sible to determine the thickness of the hBN layer from ellipsometry measurements; we find 0.94 ± 0.1 nm. These results confirm that the topographic islands observed in Fig. 1 correspond to high quality hBN layers with ...
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Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy
... Ga beam equivalent pressure (BEP) is kept at 4 10 7 Torr, the substrate temperature is kept constant at 742 C, and growth time of 2 h for five samples numbered 1, 2, 3, 4, and ...
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Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
... QDs grown on GaAs substrates by both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) techniques have been reported by several groups [12, 13], and effects of ...
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Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High Index GaAs Planes
... (QWs) grown by molecular beam epitaxy (MBE) on GaAs substrate in various orientations at relatively higher temperatures ( 450 ◦ C) are ...
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Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy
... (QW) were grown on GaAs substrates by molecular beam epitaxy (MBE) with step-graded buffer layers. The electron mobility of the QWs has been improved by varying the MBE growth conditions, ...
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Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
... Figure 1 illustrates the measured and simulated HRXRD 2θ-ω scanning curves of the symmetric (004) reflection for the MWIR and LWIR InAs/GaSb T2SLs. The simu- lation is performed by the “Epitaxy” software provided ...
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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
... layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is ...were grown on semi-insulating GaAs ...
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Compositional variations in In0 5Ga0 5N nanorods grown by molecular beam epitaxy
... a Ga-rich shell and an In-rich core. For example, fi gure 2(b) shows a Ga map corresponding to the area in fi gure 2(a). Figures 2(c) – (e) display the separate Ga, In and N maps for a single nanorod. Figure 2(f) shows ...
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Dependence of the electrical and optical properties on growth interruption in AlAs/In0 53Ga0 47As/InAs resonant tunneling diodes
... [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy ...
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Silicon strained layers grown on GaP(001) by molecular beam epitaxy
... The results of the TEM and Raman spectroscopy mea- surements and the relative values of the ion-blocking results are consistent with each other and show that the relaxation of strain i[r] ...
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Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
... Film crystallinity was checked with high-resolution x-ray diffraction (HRXRD, Bruker, D8 Discover). Spec- troscopic reflection measurement was performed with two spectroscopic ellipsometries (JA Woollam, V- VASE), one in ...
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Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
... Plasma-assisted molecular beam epitaxy 共PA-MBE兲 of- fers several advantages over other epitaxial growth tech- niques including in situ control of the growth by high energy electron diffraction ...
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