molecular-beam-epitaxy-grown structure
Anomalous strain relaxation behaviour of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy
... to APB formation are easy to figure out, the detailed struc- ture of the APBs on the atomic level is unclear. At present, there is not enough experimental data to provide an under- standing of the issue. The region ...
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Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy
... resolved structure of a surface can be obtained by monitoring the tunneling current in an ...electronic structure at a given location of a sample can also be ...
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The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy
... 1 Introduction Wurtzite-structure III-nitrides are of interest for optoelectronic and high power electronic applications. These semiconductors include AlN, GaN and InN and their alloys, which have direct band gaps ...
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Electrical and Optical Properties of Au Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
... blende structure. No wurtzite structure peaks are found at 259 cm −1 (the peak at 520 cm −1 is con- tributed from the Si ...blende structure and wurtzite structure of GaAs are ...lateral ...
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Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
... measured in UHV condition at room temperature, as shown in Fig. 2a–e, respectively. As the film thickness is reduced, the exciton peaks become sharp, probably due to band structure transition from the indirect ...
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Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy
... surface structure, plan-view and cross-sectional imaging of GaN ...of molecular species (Cmol) while keeping the atomic species concentration (Cat) constant, (b) modulating the concentration of atomic ...
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Compositional variations in In0 5Ga0 5N nanorods grown by molecular beam epitaxy
... x = 0.5 has been mapped by electron microscopy using Z-contrast imaging and x-ray microanalysis. This shows a coherent and highly strained core-shell structure with a near- atomically sharp boundary between a ...
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Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
... Group III-V semiconductors containing small amounts of bismuth (Bi), popularly known as ‘dilute bismide, ’ attracted great attention in the past decade. Bismuth is the largest and the heaviest group V element with its ...
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Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
... The group III-nitrides normally crystallise in the wurtzite structure, which has a hexagonal symmetry. High quality bulk wurtzite (hexagonal) GaN substrates can be grown from liquid Ga solutions. However, ...
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Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy
... cell temperature is ramped down while the indium cell temperature is ramped up rapidly at the start of each layer in the SGB sequence. To change the arsenic over pressure, the needle valve in the arsenic cell was ...
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Pure electron electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
... Dephasing process which purely comes from electron- electron scattering observed here is unusual but is rela- tively easy to be obtained in semiconductor-based 2D systems, such as 2D electron or hole gases (2DEG and ...
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Molecular beam epitaxy in the lithium-niobium-oxygen system
... good beam control, and reproducible growth runs for a wide range of beam flux ...also grown. Sticking coefficients for molecular oxygen were obtained (with and without Li flux present); layer ...
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Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
... diffractogram is similar to the as-grown one except for the 650°C annealing temperature. At 700°C, a slight difference is observed, while for the two highest annealing tempera- tures, the background is observed to ...
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Deep ultraviolet emission in hexagonal boron nitride grown by high temperature molecular beam epitaxy
... samples grown on sapphire and HOPG have strong similarities, the exist- ence of an emission line around ...samples grown on HOPG (figure 4(b)) is an extremely important observation as already pointed out ...
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Low phonon energy Nd:LaF3 channel waveguide lasers fabricated by molecular beam epitaxy
... final structure. The Nd-doped-LaF thin films studied in this paper were grown under ultra-high-vacuum conditions using (111) oriented CaF ...was grown on the ...
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Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy
... the grown layers we have used cAFM to measure the resistance across the hBN layers using a metal coated cantilever and the HOPG substrate as ...hBN grown on HOPG for 75 ...layered structure on the ...
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Low Temperature Photoluminescence Measurement of Extremely Thin InGaAs/GaAs Multi Quantum Wells Grown by Molecular Beam Epitaxy
... In this Figure the spectrum of the emission intensity versus photon energy is given. The PL spectrum of the sample at a temperature of 10 K with nominal Indium compositions = 0.20 is shown in Figure 8. The Figure shows ...
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Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
... Semiconductors are often subjected to alloying in order to mould their properties for different applications. The process usually involves the introduction of isoelectronic elements into a semiconductor system, which ...
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Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
... were grown on various substrates (Si, Ge, and GaAs) at different temperatures (from room temperature to 150°C) by a PerkinElmer MBE (SVT Associates, formerly Perkin-Elmer, Physical Electro- nics Division, Eden ...
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Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF MOMBE
... rate of 0.7 sccm and an RF plasma power of 400 W, InAlN films were grown at 530°C for 1 h to investigate the effect of the V/III ratio. The Si(100) substrates were cleaned in a wet bench using Radio Corporation of ...
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