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Ohmic Contact

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT

... the ohmic contact, and epi-layer optimization have been carried out ...low contact resistance, smooth surface morphology, and well-defined line edge issues ...

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Ohmic Contact Formation for n+4H SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

Ohmic Contact Formation for n+4H SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

... of ohmic contact on SiC is very ...forming ohmic contact, and nickel is one of the strong candidates for fabrication of ohmic contact on ...based ohmic contacts to SiC ...

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Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

... with contact resistivity-temperature profiles suggesting a departure from thermionic field- emission (Figure 3a), provides evidence of shallow trap phenomena associated with fissures that affect contact ...

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Comparison of nickel silicide and aluminium ohmic contact metallizations for low temperature quantum transport measurements

Comparison of nickel silicide and aluminium ohmic contact metallizations for low temperature quantum transport measurements

... In this article we examine nickel silicide (Ni x Si y ) as an alternative ohmic contact metallization to silicon for use at cryogenic temperatures. NiSi has already been inte- grated into current CMOS ...

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Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

... Figure 4a,b,c,d,e,f,g shows current–voltage ( I - V ) charac- teristics for various combinations of electrodes on the bismuth nanowire measured at 300, 250, 200, 150, 100, 50, and 4.2 K. The measurement was performed ...

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3C SiC transistor with Ohmic contacts defined at room temperature

3C SiC transistor with Ohmic contacts defined at room temperature

... forming Ohmic contact to WBG semiconductors require not only a highly doped surface region, but also a relative high temperature (around 1000 °C) post-metallisation annealing (PMA) ...the contact ...

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Formation Mechanism of Low Contact Resistance PdZn based
Ohmic Contacts for p type InP

Formation Mechanism of Low Contact Resistance PdZn based Ohmic Contacts for p type InP

... the ohmic con- tacts for the p-InP layer are required to have a low contact resistivity of less than 10 − 4 cm 2 , excellent reproducibility, and shallow diffusion depth less than 100 ...These ohmic ...

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Two step deposition of Al doped ZnO on p GaN to form ohmic contacts

Two step deposition of Al doped ZnO on p GaN to form ohmic contacts

... form ohmic contact, and ALD-AZO was added to reduce the sheet ...of ohmic contact is related to the specific contact resistance (R c ...

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Low Resistance TiAl Ohmic Contacts with Multi Layered Structure
for p Type 4H SiC

Low Resistance TiAl Ohmic Contacts with Multi Layered Structure for p Type 4H SiC

... contacts to p-type 4H–SiC, such as the Al concentration in the contacts, the layer structures, and the annealing conditions by comparing the electrical properties with the microstructures. This information will provide a ...

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Ohmic Hetero Junction of n Type Silicon and Tungsten Trioxide for Visible Light Sensitive Photocatalyst

Ohmic Hetero Junction of n Type Silicon and Tungsten Trioxide for Visible Light Sensitive Photocatalyst

... DOI: 10.4236/msce.2017.58004 35 Journal of Materials Science and Chemical Engineering concept of ohmic contact (PC1/PC2, Type III in Scheme 1). In most cases, they were a photoelectrochemical (PEC) ...

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Silver antimony Ohmic contacts to moderately doped n type germanium

Silver antimony Ohmic contacts to moderately doped n type germanium

... resistive Ohmic contacts to n-Ge are difficult to achieve because of strong Fermi level pinning at the charge neutral level ...an Ohmic contact have been ...support Ohmic contacts to annealed ...

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Construction of an Ohmic Heating Apparatus and Evaluation of Electrical Conductivity of Sweet Lime Juice

Construction of an Ohmic Heating Apparatus and Evaluation of Electrical Conductivity of Sweet Lime Juice

... during ohmic heating of 2% saline ...during ohmic heating were caused by water boiling due to temperature gradients inside the cells and is influenced by a number of factors such as higher solids content ...

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CONTACT INFORMATION. Producer Contact Information:

CONTACT INFORMATION. Producer Contact Information:

... Subject to the complete Certificate Terms and Conditions, Patriot Adventure covers injuries incurred during non-contact amateur ath- letic activities and the following activities: abseiling, BMX, bungee jumping, ...

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CONTACT INFORMATION. Producer Contact Information:

CONTACT INFORMATION. Producer Contact Information:

... 1) Coverage and benefits are subject to the applicable deductible and scheduled limits and sub-limits, and all other terms, conditions and exclusions of the Visitors Care plan as conta[r] ...

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First Ohmic Discharge Assisted with RF Power in QUEST Spherical Tokamak

First Ohmic Discharge Assisted with RF Power in QUEST Spherical Tokamak

... initial ohmic discharge exper- iments in QUEST assisted with RF heating ...the ohmic discharge experiments, as expected, although the null field regime was not created because a vertical field was applied ...

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Non-Newtonian Nanofluid Flow over an Exponentially Stretching Sheet with Ohmic Effects

Non-Newtonian Nanofluid Flow over an Exponentially Stretching Sheet with Ohmic Effects

... ABSTRACT : In this article we studied the effects of thermal radiation and viscous dissipation on boundary layer flow, heat and mass transfer characteristics of Maxwel[r] ...

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High Power Low Ohmic Chip Resistors

High Power Low Ohmic Chip Resistors <Wide Terminal type>

... If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1) , aircraft/spacecraft, nuclear power controllers, etc.) and whose [r] ...

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Ohmic and Space-Charge-Limited Conduction in Doped Amorphous Arsenic Triselenide

Ohmic and Space-Charge-Limited Conduction in Doped Amorphous Arsenic Triselenide

... The number of traps in the range K8T near the fermi level was found from the theory that change voltage needed to double the current i n the space charge limited region i s a good measur[r] ...

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AC characteristics of low-ohmic foil shunts influenced  by eddy currents in the mounting body

AC characteristics of low-ohmic foil shunts influenced by eddy currents in the mounting body

... Abstract. The requirements for precision current-sensing shunts are getting more sophisticated due to further development of fast switch-mode converters and other high-frequency applications. Good AC characteristics are ...

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Design and Evaluation of Electrical Resistance Unit(Ohmic Heating) for Food Processing

Design and Evaluation of Electrical Resistance Unit(Ohmic Heating) for Food Processing

... loss.In ohmic heating, the electrical energy provided to the heating cell is ideally used only for heat generation; and electrochemical reactions at electrode and solution interface is considered ...of ...

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