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organic field-effect transistor (OFET)

The Substrate is a pH-Controlled Second Gate of Electrolyte-Gated Organic Field-Effect Transistor

The Substrate is a pH-Controlled Second Gate of Electrolyte-Gated Organic Field-Effect Transistor

... Water3Gate Organic Field3Effect ...Water3Gated Organic Field Effect Transistors – Opportunities for Biochemical Sensing and Ex3 tracellular Signal ...by Organic Field ...

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Optimization of 6,13Bis(triisopropylsilylethynyl)pentacene (TIPS Pentacene) Organic Field Effect Transistor: Annealing Temperature and Solvent Effects

Optimization of 6,13Bis(triisopropylsilylethynyl)pentacene (TIPS Pentacene) Organic Field Effect Transistor: Annealing Temperature and Solvent Effects

... (a-Si-H), organic transistors play a key role in next genera- tion of electronic ...devices. Organic materials such as polymers and small mole- cules have potential advantages as active layers in the ...

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The Effect of Dielectric Surface Modification and Heat-treatment on the Performance of Rubrene based Organic Field-effect Transistor

The Effect of Dielectric Surface Modification and Heat-treatment on the Performance of Rubrene based Organic Field-effect Transistor

... the organic films grown on the top, especially the first monolayer which is very critical to improve the interface between the organic semiconductor and the dielectric ...

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Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

... The output voltage of the P(VDF-TrFE)/OFET sensor exhibits a linear response to static/constant temperature regardless of whether P (VDF-TrFE) is in the ferroelectric or paraelectric state. Sensitivities ranging from 3.8 ...

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Biocompatible/Degradable Silk Fibroin:Poly(Vinyl Alcohol) Blended Dielectric Layer Towards High Performance Organic Field Effect Transistor

Biocompatible/Degradable Silk Fibroin:Poly(Vinyl Alcohol) Blended Dielectric Layer Towards High Performance Organic Field Effect Transistor

... spectively, were obtained in the device with SF:PVA = 7:5 blend dielectrics. Furthermore, the OFET with SF:PVA = 21:5 blend dielectric layer showed a higher bias stability than that with pure SF dielectric. The presence ...

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Thiazole-induced rigidification in substituted dithieno-tetrathiafulvalene : the effect of planarisation on charge transport properties

Thiazole-induced rigidification in substituted dithieno-tetrathiafulvalene : the effect of planarisation on charge transport properties

... properties. Organic field effect transistor (OFET) devices fabricated from 1 and 2 demonstrated that the substitution of thiophene units for thiazoles was found to increase the observed charge ...

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Novel 4,8 benzobisthiazole copolymers and their field effect transistor and photovoltaic applications

Novel 4,8 benzobisthiazole copolymers and their field effect transistor and photovoltaic applications

... a conjugation pathway that is orthogonal to the more usual substitution pathway through the 2,6-positions of the BBT unit, facilitating intramolecular non-covalent interactions between strategically placed heteroatoms of ...

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Organic nanofibers integrated by transfer technique in field effect transistor devices

Organic nanofibers integrated by transfer technique in field effect transistor devices

... The integration of the nanofibers onto the device plat- form took place via a special transfer technique, the details of which will be reported elsewhere (Tavares L, Kjelstrup-Hansen J, Rubahn H-G: Efficient Roll-on ...

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Photoelectrical Characteristics of UV Organic Thin-film Transistor Detectors

Photoelectrical Characteristics of UV Organic Thin-film Transistor Detectors

... Under effect of the gate electric field, the photogenerated holes move to the ITO gate electrode and the photogenerated electrons move to the interface of the photoactive/polystyrene buffer ...electric ...

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Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

... research field called organic ...on organic materials is partly driven by the increased interest in both aca- demic and industry thanks to a low manufacturing cost, mass production, compatibility ...

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Field Effect Transistor Anomalous Correlations in odd-even chain parity

Field Effect Transistor Anomalous Correlations in odd-even chain parity

... Based on a more realistic model of 1-D chains, our results are in agreement with the literature. This procedure shows an analytical and numerical study in systems with parameters that are accessible experimentally. ...

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Compact graphene field effect transistor modeling with quantum 
		capacitance effects

Compact graphene field effect transistor modeling with quantum capacitance effects

... capacitance effect is more pronounced at 90nm which has been considered here using quantum capacitance leading to the determination of the carrier concentration more accurately and shows improved drain ...

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Security Analysis of Tunnel Field-Effect          Transistor for Low Power Hardware

Security Analysis of Tunnel Field-Effect Transistor for Low Power Hardware

... be sufficient enough to achieve a high ON current. These cause noticeable decelerated scaling of both threshold voltage and supply voltage. A novel inter-band tunneling transistor named, Tunnel FET has been ...

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Design and Applications of Schottky Barrier Carbon Nanotube Field Effect Transistor

Design and Applications of Schottky Barrier Carbon Nanotube Field Effect Transistor

... dimensions effect the capacitance by the following: the gate capacitance depends on the number and the diameter of the CNTs and to a lesser extent, the width and length of the channel in comparison to the back ...

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PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR

PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR

... of field and bipolar transistor operation are of great ...two-source transistor is very sensitive to deformation (Babichev et al, ...A field-effect transistor produced as a ...

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Fabrication of a CHMOSFET with a Combination of P-Carbon Nanotube and an Enhanced NMOS

Fabrication of a CHMOSFET with a Combination of P-Carbon Nanotube and an Enhanced NMOS

... II. M ATERIAL S TRUCTURE AND L AYOUT D ESIGN Nanotechnology: The techniques for the fabrication of Carbon Nanotubes have evolved over the years. It started with the Back-gated technique with a lot of defects. This method ...

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Ion-sensitive field effect transistor (ISFET) for MEMS multisensory chips at RIT

Ion-sensitive field effect transistor (ISFET) for MEMS multisensory chips at RIT

... insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design," Microelectronics Reliability, ...Integrated Field-Effect Electrode for Biopotential ...

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Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

... polarization hysteresis known as the “memory window”, an important figure of merit of a FeFET that provides a window for the read voltage. A dielectric layer between semiconductor layer and the ferroelectric is required ...

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Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection

Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection

... was applied on the back gate in the measurement, which can increase homogeneous distribution of the electric field. The results in Figure 6 show that different CEA solutions, with concentrations of 1, 10, and 100 ...

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High performance III V MOSFET with nano stacked high k gate dielectric and 3D fin shaped structure

High performance III V MOSFET with nano stacked high k gate dielectric and 3D fin shaped structure

... methods [2,3], growth of insulator on various III-V materials [4,5], as well as realization of III-V MOSFETs [6-11]. Up-to-date III-V MOSFET technologies have demonstrated significant performance enhancement and have ...

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