P-N junction diodes
One sided rectifying p n junction diodes fabricated from n CdS and p ZnTe:Te semiconductors
... the p-n junction diodes fabricated from CdS/ZnTe hetero- junctions is a one-sided n + p junction diode with N D >> N A ...
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Effect of Various Radiations on the Working of P-N Junction Diode
... of p-n junction diode. A number of p-n junction diodes have been exposed to various ...these p-n junction diodes have been measured after ...of ...
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Design and Construction of Solar Operated Thermo-Electric Heating and Cooling System
... the p-n ...a p-n material ...the p-n junction theory used in diodes - the most simple semiconductor ...In p- material, the charge carriers are holes and in ...
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On the p AlGaN/n AlGaN/p AlGaN Current Spreading Layer for AlGaN based Deep Ultraviolet Light Emitting Diodes
... the n-AlGaN layer ...PNP-AlGaN junction is employed. In addition, as the AlN composition in the n-AlGaN layer for the PNP-AlGaN junction increases, the EQE can be further promoted, thanks to ...
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FUNCTIONING OF ELECTRONIC DEVICES WITH DIMENSIONS ON THE NANOMETER SCALE Gautam S. Ughade 1, Madhav N. Rode2 , Ph.D. & Vilas Patil 3
... of p-Si/n-Si, p-InP/n-InP, p-InP/n-CdS and p-Si/n-GaN ...the junction and linear current behavior in individual NWs, demonstrating the formation of ...
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Junction investigation of graphene/silicon Schottky diodes
... that the electron–hole pairs could be efficiently gener- ated and separated in the G/Si solar cells, which helps facilitate the Schottky junctions to harvest solar light more effectively. The schematic energy band ...
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Influence of Deformation on CVC p n Junction in a Strong Microwave Field
... the p-n-junction in a strong microwave ...the p-n-junction in the mode of the short circuit current decreases the effective barrier height, and idling to anomalously large values ...
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Fabrication of novel transparent Co3O4 TiO2 nanowires p n heterojunction diodes for multiband photodetection applications
... The p-n junction half wave rectification was observed by connecting the junction diodes in series with a 1 MΩ resistance and using a digital storage oscilloscope (TBS1062, ...
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DC To DC Converter Using CMOS
... FIGURE LIST TITLE PAGE Boost Converter 5 Waveforms 8 Diodes 13 I-V characteristics of a P-N junction diode not to scale 15 Hybrid Darlington configuration of MOSFET and BJT 19 The IGBT a[r] ...
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Optimization of Doping of Heterostructure during Manufacturing of P I N Diodes
... of p-n-junctions and homogeneity of distributions of dopants in doped ...the p-n-junctions during their ...a p-n-junction gives us possibility to increase current density ...
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Investigation on Al Doped Zno Thin Films and its N-Alzno/P-Si Junction Diodes Via Dip Coating and JNSP Techniques
... and n-AlMoO 3 /p-Si diode The starting solution was prepared with ...PN junction diode because there may be some impurities of dust, grease and organic residues present on the ...
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Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
... with p-n junction (laser diodes) leads to some undesirable results such as optical power reduction and rise in threshold ...of N quantum wells and creation of N traps in band gap ...
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Characterization of p-SnO2:Al /n-ZnO:Al p-n junction deposited by spray pyrolysis technique for led applications
... the p-side. Since electrons are the minority carriers in the p-side, this process is called minority carrier ...the p- side to n+ side is very low and so the current is primarily due to the ...
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The origin of the red emission in n ZnO nanotubes/p GaN white light emitting diodes
... the p-GaN ...the p-GaN substrate, forming n-ZnO- (NTs)/p-GaN p-n ...the n-ZnO NTs/p-GaN LEDs developed in this ...
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Spin-orbit interaction and snake states in a graphene p-n junction
... of p-n junctions in graphene subject to a perpendicu- lar magnetic ...graphene p-n junctions in magnetic ...the junction, which could be tested ...the p-n junction ...
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A detailed study of p n junction solar cells by means of collection efficiency
... The present method relies on the use of non-degenerate (Boltzmann) statistics, taking into account possible degen- eracy through the use of effective band gap narrowing in Eqs. (4) and (5). The accuracy of this approach ...
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The Efficiency of a p n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer
... [16] H. Awaki, K. Tachibana, Y. Tamai, K. Yamamoto, S. Kitamoto and M. Tsujimoto, “A Novel Method to Esti- mate the Thickness of the Depletion Layer of an X-Ray CCD,” Nuclear Instruments & Methods in Physics Re- ...
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Investigation of electrically active defects in InGaAs quantum wire intermediate band solar cells using deep level transient spectroscopy (DLTS) technique
... temperature and their values change with voltage as shown in figure 5. Three different regions generally appear around 0.2V, 0.4V and 0.5V indicating the currents transition between different dominating mechanisms [19, ...
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Growth and Characterization of Jet Nebulizer Spray Deposited N-type WO3 Thin films for Junction Diode Application
... junction diode was prepared using JNSP technique. The diode parameters of ideality factor (n) values were measured as 5.8 in darkness and under illumination as 3.9.The photoconduction nature of the prepared ...
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Fabrication and characterization of solar cells based on silicon nanowire homojunctions
... The PPCVD method was used to fabricate SiNW homo-junction solar cells. ITO-coated glass was used as the substrate for the solar cells. Zn and Au metal thin films were used to catalyze the SiNWs with thicknesses ...
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