PECVD a-Si films
Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)
... a-Si:H films are critically determined by the energy of the ionic species and the consumption of the gas mixture in the deposition ...Si:H films with a wide range of properties by adjusting the deposition ...
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Structural and optical properties of nanocrystalline silicon thin films grown by 150MHz VHF-PECVD
... Nanocrystalline silicon (nc-Si) has been a widely studied structure because of the discoveries that its properties can be tuned just by controlling the size of the crystals. There are also the advantages of ...
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On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR PECVD
... aSi-NCs, Si-NCs, or defects) to erbium ...the Si-concentration-dependent position of the excitation spectra for Er 3+ ions and VIS emission ...the Si content increases, the edge of excitation as well ...
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Opto Structural Properties of Silicon Nitride Thin Films Deposited by ECR PECVD
... while the second plate relative to the N is flooded in that of Si substrate. The latter is not flat due to the channel- ling effect when the particles pass through the crystal structure of the substrate. The areal ...
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Effects of silane flow rate on the structural properties of a Si:H thin films deposited by d c and pulsed PECVD
... pulsed PECVD system was developed from a modification of the existing d.c. PECVD system with a modulation frequency of ...of films prepared by both techniques were investigated. These films ...
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Crystallization of amorphous silicon thin films deposited by PECVD on nickel metalized porous silicon
... Raman spectroscopy was used to quantitatively characterize the crystallinity degree of the porous sub- strate and the a-Si thin films before and after annealing. The obtained Raman spectra are shown in ...
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Amorphous Nanocrystalline Transition in Silicon Thin Films Obtained by Argon Diluted Silane PECVD
... The Plasma-Enhanced Chemical Vapor Deposition (PECVD) method is widely used compared to other methods to de- posit hydrogenated silicon Si:H. In this work, a systematic variation of deposition parameters was done ...
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IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition
... The films are dense and transparent in the visi- ble ...the Si–N stretching mode in the IR absorption spectrum increases with increasing N–H bond density, which is similar to the beha- vior of a-SiN x :H ...
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Effects of annealing on the electro optical properties of a Si:H thin films deposited by D C and pulsed PECVD
... a-Si:H films on soda glass substrates were prepared using Silane flow- rates of 10 and 40 sccm using both the pulsed and ...d.c. PECVD technique. The pulsed PECVD a-Si:H films studied in this ...
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Infrared and raman spectroscopy studies on pulsed PECVD a Si:H Films
... weak Si-Si bonds and incorporates H into the film structure also creates growth sites for strong highly ordered film structure This activity also saturates with increase in discharge power which explains ...
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THE EFFECT OF Xe ION AND NEUTRON IRRADIATION ON THE PROPERTIES OF SiC AND SiC(N) FILMS PREPARED BY PECVD TECHNOLOGY
... clusters that commonly exist in diamond like carbon films. Structures with metal contacts were irradiated with Xe ions and neutrons. Electrical results showed no rectifying effect in the measured I-V ...
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Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films
... The bare silicon wafers were chemically cleaned and were then subjected to annealing at a temperature in the range of 300–1100 C for 30 min in nitrogen. Prior to the anneals, extended furnace cleaning was performed to ...
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Annealing Effect on the Optical Properties of a SiC:H Films Deposited by PECVD*
... a-SiC:H films is performed in a furnace of Ar atmosphere for 3 h at temperatures ranging from 573 to 873 ...the Si–C, Si–H and C–H absorption bands were analyzed by plot- ting the absorption ...
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Surface Characteristics of Silicon Nitride Compounds Deposited on Plasma Nitrided Austenitic Stainless Steels 316L
... Nitriding improves the surface hardness and wear resistance of various steel materials, such as tool steels and stainless steels. Thermo-chemical diffusion treatments such as nitriding and carburizing processes alter the ...
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Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
... Depositing nanometers thin ZrN on top of the PureB is more promising to prevent di ff using of Al to the Si substrate. To study this we deposited, after boron layer deposition, a very thin layer of ZrN, 10 nm, as ...
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Microstructures and Optical Properties of Silicon Spheres for Solar Cells
... the Si spheres. The diameter and weight of the Si spheres at this time were approximately ...p-type Si spheres, the non-doped Si spheres were cleaned by chemical etching, and then annealed at ...
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Properties of Si quantum dots
... small Si clusters forming which would increase the number of interfacial Si-O bonds present in the film or by a few large Si clusters forming and the majority of Si-O bonds being formed in the ...
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Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)
... to Si-Zr bonding was observed [17], suggesting a lack of silicide forma- tion at the substrate interface and Si-Zr bonding with in the interfacial ...
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Chemical Bonding Composition and Humidity Sensing Properties of a-CNx Thin Films by Low-Temperature rf-PECVD Technique
... thin films was characterized using Fourier transform infrared spectroscopy (FTIR) and its sensing properties was determined using a home built humidity sensor ...
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Studies of the self-assembled growth mechanism on nanocrystalline silicon nanodots
... Nanodot is an artificial nanostructure having diameters between 10 - 100 nm beyond which quantum dot (<10 nm) and thin film (>100 nm) are dominant. It can fill up to more than10 5 atoms, i.e. about ten times the ...
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