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resonant tunneling

Voltage  and light controlled spin properties of a two dimensional hole gas in p type GaAs/AlAs resonant tunneling diodes

Voltage and light controlled spin properties of a two dimensional hole gas in p type GaAs/AlAs resonant tunneling diodes

... polarization degree of the 2DHG emission are voltage and light dependent. Particularly they show sign inversion for different laser power conditions. These results, which are attributed to the effects of changes of the ...

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Al-rich AlGaN/AlN-based double barrier resonant tunneling diodes

Al-rich AlGaN/AlN-based double barrier resonant tunneling diodes

... molecules. Resonant tunneling diodes (RTDs) are semiconductor electronic devices that continuously oscillate in a frequency above THz at room temperature (RT), classifying them as the fastest electronic ...

231

Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures

Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures

... mechanical tunneling, however for less temperature dependent high-speed operation [9], the dominant conduction should be quantum ...of resonant tunneling (RT) of electrons through a quantum well ...

6

Mid infrared GaSb based resonant tunneling diode photodetectors for gas sensing applications

Mid infrared GaSb based resonant tunneling diode photodetectors for gas sensing applications

... present resonant tunneling diode photodetectors with a GaAsSb/AlAsSb double barrier structure covering the fingerprint absorption region of various gases in the mid-infrared wavelength ...the ...

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Influence of C Axis Inter Unit Cell Resonant Tunneling on the Spectral Function in Bilayer Cuprates

Influence of C Axis Inter Unit Cell Resonant Tunneling on the Spectral Function in Bilayer Cuprates

... cell resonant tun- neling between the copper-oxygen planes on c-axis elec- tronic conductivity in normal state of optimally doped bilayer cuprates is investigated ...intercell resonant tunneling and ...

7

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

... barrier resonant tunneling ...the tunneling device and, in the bistable current condition, the emission occurs for low and vanishes for high tunneling currents in a wide temperature ...the ...

6

Graphene hexagonal boron nitride resonant tunneling diodes as high frequency oscillators

Graphene hexagonal boron nitride resonant tunneling diodes as high frequency oscillators

... Here, we analyse how the device and circuit param- eters can be tuned to increase the operating frequency of graphene resonant tunneling diodes (GRTDs). Our model device, shown schematically in Fig. 1(a), ...

5

p type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid infrared spectral region

p type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid infrared spectral region

... be ascribed to resonant tunneling of holes via the first quantized light hole state of the double barrier quantum well. The symmetric I(V)-characteristics can be ascribed to a symmetric VB profile (see ...

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Numerical Simulation of Resonant Tunneling Devices Described by the Wigner-Poisson Equations.

Numerical Simulation of Resonant Tunneling Devices Described by the Wigner-Poisson Equations.

... barrier resonant tunneling diodes (RTDs) have been studied in detail for over 30 years due to the interesting physical characteristics they display as well as their potential to be used in high-speed ...

164

Design of Broadband Non-Foster Circuits based on Resonant Tunneling Diodes

Design of Broadband Non-Foster Circuits based on Resonant Tunneling Diodes

... A resonant tunneling diode is so because the transmission of electrons, and therefore current, depends on the alignment between the filled electron states in the emitter with the resonant ...

7

Spin polarization of carriers in InGaAs self assembled quantum rings inserted in GaAs AlGaAs resonant tunneling devices

Spin polarization of carriers in InGaAs self assembled quantum rings inserted in GaAs AlGaAs resonant tunneling devices

... electron resonant tunneling ...to resonant tunneling to excited states of QRs in agreement of a previous work carried out on this device 23 ...

22

Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage

Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage

... (RTD) are the most important design parameters to fabricate different devices, because they are the determinants of the resonance energies, and the peak-to-valley ratio (PVR) [6]-[14]. By adjusting both the thickness of ...

7

Electroluminescence on off ratio control off n−i−n GaAs/AlGaAs based resonant tunneling structures

Electroluminescence on off ratio control off n−i−n GaAs/AlGaAs based resonant tunneling structures

... GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with ...coherent resonant tunneling current and the incoherent valley ...the tunneling current of the on and off ...

6

Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures

Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures

... mechanical tunneling, however for less temperature dependent high-speed operation [9], the dominant conduction should be quantum ...of resonant tunneling (RT) of electrons through a quantum well ...

18

GaAs based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

GaAs based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

... As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high ...

6

Effect of self assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode

Effect of self assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode

... Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, ...

5

Circular polarization in n type resonant tunneling diodes with Si delta doping in the quantum well

Circular polarization in n type resonant tunneling diodes with Si delta doping in the quantum well

... non-magnetic resonant tunneling diodes (RTDs) ...to tunneling through spin-states in the quantum-well (QW) ...near resonant voltages ...

5

Generation and Shaping of Soliton Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

Generation and Shaping of Soliton Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

... underlying characteristic of the RTD is a nonlinear N- shaped current-voltage relationship with a negative dif- ferential resistance (NDR) in the active region even at millimetre wave frequencies. It is regarded as the ...

6

Electronic properties of core shell nanowire resonant tunneling diodes

Electronic properties of core shell nanowire resonant tunneling diodes

... Reversing the polarity of the applied voltage or electric field will make the lowest sub-band in the middle shell fall towards the quasi Fermi level on the surface side, causing an increase in current, that will flow ...

8

Cavity enhanced resonant tunneling photodetector at telecommunication wavelengths

Cavity enhanced resonant tunneling photodetector at telecommunication wavelengths

... GaAs/AlGaAs resonant tunneling diode (RTD) with GaInNAs absorption layer for telecommunication light sensing with a sensitivity of 10 3 A/W, with the RTD serving as internal am- plifier of weak electric ...

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