Ti/W ohmic contacts
Multi Layer SnSe Nanoflake Field Effect Transistors with Low Resistance Au Ohmic Contacts
... and Ti/Au (thicknesses, 10/ 100 nm) were considered as ohmic contacts on SnSe ...( W ) of 4.71 μ m, while for the 70-nm-thick SnSe FET L was 5 μm and W was 6 ...
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Low Resistance TiAl Ohmic Contacts with Multi Layered Structure for p Type 4H SiC
... that the TiC formation was observed at the 6H–SiC/Ti inter- face after annealing at 700 ◦ C for 20 min by a cross-sectional transmission electron microscope (TEM), and that TiC was formed with the relationship of ...
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Nanoscale electro structural characterisation of ohmic contacts formed on p type implanted 4H SiC
... Consequently, Ti/Al ohmic contacts fabricated on the implanted regions annealed with a capping layer exhibited a lower surface roughness and better electrical uniformity with respect to the ...
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Highly sensitive hydrogen sensor based on graphite InP or graphite GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
... area ohmic contact on the opposite ...Schottky contacts made on the plain InP surface ...Schottky contacts, esti- mated from photographs taken on the optical micro- scope, were ...
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Silver antimony Ohmic contacts to moderately doped n type germanium
... electrical contacts to n-Ge are a potential road- block to the majority of these ...resistive Ohmic contacts to n-Ge are difficult to achieve because of strong Fermi level pinning at the charge ...
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Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT
... mized Ti/Al/Ta/Au contact was only around 10 nm, which is significantly lower than the previously reported data of over 40 nm for Ti/Al/Ni/Au contacts [10,17], and 36 nm for Ti/Al/Mo/Au ...The ...
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Controlling the Electrical Transport Properties of Nanocontacts to Nanowires
... of contacts to individual free-standing nanowires requires the use of more than one probe 13,18 to overcome the limitations of single-probe techniques such as AFM and ...an Ohmic contact to the side of an ...
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Formation Mechanism of Low Contact Resistance PdZn based Ohmic Contacts for p type InP
... Au-based ohmic contacts for p-type InP, such as AuZn or AuBe, are ...Au-based contacts have deep protrusion of the metals into the InP substrates and optimum annealing temperature to produce low ...
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Two step deposition of Al doped ZnO on p GaN to form ohmic contacts
... which ohmic contacts are crucial for good device ...realize ohmic contacts to p-type GaN [3, ...Au contacts are opaque, expensive and unstable at high ...
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High figure of merit of the post annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n GaN
... GaN template and the peaks can be clearly observed at 35.98 and 76.33 corresponding to the AlN (002) and (004), respectively. The TiN (111) and (222) peaks have the same 2-theta position as the AlN since they have almost ...
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Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation
... The relative variation of contact resistivity as a func- tion of measurement temperature is shown in Figure 3a for Ti/Al/Ni/Au (10/50/50/50 nm) contacts to samples HA, NA, HD and ND. NA shows a trend ...
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Analysis of AlGaN/GaN high electron mobility transistors with nonalloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular beam epitaxy
... methanol. Ti/Al/Ti/Au as the contact metals were deposited by electron- beam (E-beam) evaporation on the regrown GaN ...which Ti/Al/Ti/Au metal stack went through rapid thermal annealing (RTA) ...
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Near surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
... drain Ohmic contacts were formed by an annealed Ti/Al/Ni/Au multilayer [9] and the gate Schottky con- tact was subsequently formed by a Pt/Au bilayer ...
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3C SiC transistor with Ohmic contacts defined at room temperature
... grown on a 4-inch Si(100) substrate by NOVASiC. Nitrogen was implanted for creating high impurity concentration regions. A post-implantation annealing (PIA) at 1375 °C (Si melting point 1412 °C [8]) for 1 hour was ...
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Effect of Milling on the Carbothermal Reduction of Oxide Mixture for (Ti,W)C Ni
... NiO-C mixtures with respect to the high-energy milling time. In general, the intensities of the profiles were relatively low, even after 5 h milling (Fig. 1(a)), while many peaks com- bined with time (Fig. 1(c)). Figure ...
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Tuberculosis burden in China: a high prevalence of pulmonary tuberculosis in household contacts with and without symptoms
... household contacts have been infected by TB cases inside or outside the family ...close contacts might bring benefit for the general public ...household contacts is cost-effective remains ...
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Effects of Cryo Treatment on Corrosion Behavior and Mechanical Properties of Laser Welded Commercial Pure Titanium
... The Ti specimens were machined to 10 mm © 10 mm © 0.5 mm. A welded Ti sample was made from two machined ...500 W, pulse duration of 10 ms, spot diameter of 1 mm) were preset to have a penetration ...
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Metal Ceramic Smart Composite in Ti(C,N) Ni Mo W System
... Determination of hardness indices at high temperatures Table 3 prove that the tested composite preserves hardness up to a rather high temperature, while standard composites with cobalt o[r] ...
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Helisoma neurones in the construction of circuits in vitro
... soma-soma contacts, and after 24 hours in the case of neurite ...soma contacts involving leech neurones were further used to study calcium currents during synapse formation (Fernandez-De Miguel, ...
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A multicriteria resource allocation model for the redesign of services following birth
... midwife contacts often adopt a ‘one-size fits all’ approach based on organisa- tional priorities, rather than recognising the needs of in- dividual women ...
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