[PDF] Top 20 Towards oxide-based spintronic devices

... In this project, we have worked towards devices for two different oxide systems. Firstly, we have worked on the optimization of growth parame- ters for the deposition of LSMO films in off-axis ... See full document

... digital devices and hence reducing power consumption of memories as well as area reduction is very important as of today to improve system performance, efficiency and ...an oxide layer, furthermore, these ... See full document

... and devices have been fabricated with alternating current ...These devices offer high levels of sensitivity, recoverability, and reliable detection of NO gas (ranging from 2 ppb to 420 ppb), with a response ... See full document

... This work would never be completed without the great support from many people I have interacted with inside and outside the lab. First of all, I’d like to thank Prof. Christopher B. Murray, my research advisor. Chris ... See full document

... AlGaN based heterojunction field effect transistors (HFET) are at the verge of being commercialized for high power and high frequency ...existing devices, but also to find new functionalities of this ... See full document

... nanoscale devices at RT. This is based on milestones, including large perpendicular magnetic anisotropy and small damping ...high-frequency devices within 35 ... See full document

... in the threshold voltage of the channel. Room temperature T = 300 K is considered. To keep the bandstructure features qualitatively simple, we assume 1D, parabolic, isotropic bands, despite the fact that the bands can be ... See full document

... power devices (i.e: insulated gate bipolar transistors (IGBTs) and metal oxide semiconductor field effect transistors (MOSFETs)) are still major components of power electronic converters, considerable ... See full document

... Enhancing spin-orbit coupling (SOC) in graphene has attracted much interest in re- cent years, for its application in spintronic devices and realization of exotic physics phenomena such as quantum spin Hall ... See full document

... on oxide-based resistance random access memory (RRAM) ...devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment ... See full document

... ranged from 15° to 45°, leading to two depinning ields. In this presented work, the let arm including the elliptic pad, the lengths of the notch and the total nanowire are all maintained while only the width of the right ... See full document

... This project focusses on the spintronic properties of the interface between graphene and the (111) plane of nickel on which it is deposited. This interface is known to exhibit a strong Rashba spin orbit coupling ... See full document

... direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray ... See full document

... Most of the theoretical work to date is based on density- functional theory 共 DFT 兲 utilizing local approximations to the exchange and correlation functional 共LDA or GGA兲. In most of the cases the LDA/GGA, ... See full document

... computer based user applications software’s (known as smartphone apps) and and desktops and this was contradicted with the The real shift was seen in the end of the 2010 PC has always sold for more than ... See full document

... 1s spectra is shown in Figure 3(a) and contains a main peak at 529.4 eV and originates from oxygen atoms bound to nickel within the nickel oxide film. 26 A secondary peak is also present at a higher binding energy ... See full document

... Hybrid devices consist of two classes of materials with different properties, typically one organic and one inorganic, with the ultimate aim to form a new material combination with the most appealing properties of ... See full document

... The basis for these technologies is micromachining which involves the manufacture of mechanical structures in the micron to millimeter range. Precision machining is typically work done above the mm range and molecular ... See full document

... iron oxide films prepared by PLD were analyzed by many different characteri- zation techniques in order to ascertain their chemical and crystallographic properties as well as their magnetic moment, key to any ... See full document

... power-hungry devices consume energy and how they have proven to be painful for quite a many owners of data ...network devices so as to provide continuous ...network devices may be switched off or ... See full document