Laser-Solid Interactions

AIP Conference Proceedings

Series Editor: Hugh ^{C. Wolfe} Number 50

Laser-Solid Interactions and Laser Processing-1978

(Materials ^Research Society, ^Boston)

Editors

S.D. Ferris, ^H.J. Leamy , J.M. Poate

Bell Telephone Laboratories

American Institute of Physics

New York 1979

TABLE OF CONTENTS

Section 1. FUNDAMENTALS

Part a. Laser-Solid Interactions

Fundamentals of Laser-Solid Interactions 1

N. Bloembergen

Dynamics ^{of Laser} Annealing 11

D. H. Auston, ^{J. A.} Golovchenko, ^{A. L.} Simons,

R. E. Slusher, ^{P. R.} Smith, ^{C. M.} Surko, ^{T. N. C.}

Venkatesan

*Laser Generated Stress Waves: Their Characteristics and their 2 7 Effects to Materials

B. P. Fairand, A. H. Clauer

Annealing of Silicon with 1.06 _ym Laser Pulses 43 M. von Allmen, ^W. Liithy, ^{M. T.} Siregar,

K. Affolter, ^{M. A.} Nicolet

Infrared Laser Molecular Solid Interaction at Low Temperatures 49 Under Ultrahigh ^Vacuum

J. Heidberg, ^H. Stein, ^{A. Nestmann, E. Hoefs,} I. Hussla

Transient Heating ^{of Metals} by Microsecond-Duration CO2 ^{5 5}

Laser Pulses with Air Plasma Ignition

J. A. McKay, ^{J. T.} Schriempf

Dynamic ^Behaviors of Pulsed-Laser Annealing ⁱⁿ Ion-Implanted 61 Silicon Studied by Measuring ^the Optical Reflectance

K. Murakami, ^K. Gamo, ^S. Namba, ^M. Kawabe,

Y. Aoyagi, ^{Y. Akasaka}

Time-Resolved Specular Reflectivity ^{of Metals} Subjected ^to 6 7 10.6 vim Laser Pulses

C. T. Walters, ^{A. H. Clauer}

Part b. Materials

Kinetics of Motion of Crystal-Melt ^Interfaces F. Spaepen, ^D. Turnbull

Comparison ^{of Laser} and Thermal Annealing ^of Implanted- Amorphous ^Silicon

S. S. Lau, J. W. Mayer, ^{W. F.} Tseng

A Calculation ^{of the} Thermodynamic First Order Amorphous Semiconductor to Metallic Liquid ^Transition Temperature

B. G. Bagley, ^{H. S. Chen}

A Comment ^on the Solubility ^of Impurities ⁱⁿ Laser Annealed Silicon

K. A. Jackson, ^{H. J.} Leamy

Redistribution of Very Thin Sb-Layers ⁱⁿ Si After Laser Annealing: ^A Theoretical ^{Model and} Preliminary Experimental Results

Z. L. Liau, B. Y. Tsaur, ^{S. S.} Lau, ^I. Golecki,

J. W. Mayer

73 84

97

102

105

Invited

Laser Induced Structure Changes ⁱⁿ Implanted Semiconductors 111 Related to Pulse Shape

G. Vitali, ^M. Bertolotti, ^L. Stagni

Fast Laser Kinetic Studies of the Semiconductor-Metal Phase 117 Transition in V02 ^{Thin Films}

R. M. Walser, M. F. Becker

Dopant ^Profile Changes ^Induced by ^Laser Irradiation of 123 Silicon: Comparison ^of Theory ^and Experiment

J. C. Wang, ^{R. F.} Wood, ^{C. W.} White, ^{B. R.} Appleton,

P. P. Pronko, S. R. Wilson, W. H. Christie Part c. Thermal Considerations

*Laser Surface Melting ^and Subsequent Solidification 129

R. Mehrabian, ^S. Kou, S. C. Hsu, ^A. Munitz

Spatial Distribution ^of Temperature Rise Induced by ^{a Gaussian 149} Laser Beam

M. Lax

Calculation ^of the Dynamics ^{of Surface} Melting During ^{Laser 155} Annealing

C. M. Surko, ^{A. L.} Simons, D. H. Auston, J. A. Golovchenko, ^{R. E.} Slusher, ^{T. N. C.}

Venkatesan

Section 2. METALS

*Laser Melt Quenching ^and Alloying _25j

S. M. Copley, ^D. Beck, ^0. Esquivel, ^{M. Bass}

*Laser Transformation Hardening _{17 "5}

D. S. Gnanamuthu, ^{C. B.} Shaw, Jr., W. E. Lawrence, M. R. Mitchell

*Heat Transfer Properties and Microstructures of Laser Surface 189 Melted Alloys

L. E. Greenwald, ^{E. M.} Breinan, ^{B. H. Kear}

Laser Assisted Hot Spot Machining 20 5

M. Bass, S. Copley, ^{D. G.} Beck, ^{R. J. Wallace}

Redistribution of Cu in Polycrystalline ^and Single Crystal 212 Al After Laser Irradiation

G. Delia Mea, ^P. Mazzoldi

Pulsed YAG Laser Welding ^{of ODS} Alloys 215

T. J. Kelly

Topographical Characteristics ^{of Laser Surface Melted Metals} 2 21 P. Moore, ^C. Kim, ^{L. S.} Weinman

Analysis ^{of Laser} Drilling ^and Cutting ^{Results in} Al2°3 ^{and 225}

Ferrites

J. G. Siekman

Heat Treatment of Laser Melted M2 Tool Steel 2 32

P. R. Strutt, D. A. Gilbert, ^H. Nowotny, ^Y.-W. Kim A Microprobe Study ^of Rapidly ^{Solidified Laser Surface}

Alloyed ^{Low Carbon Steels} 239

L. S. Weinman, ^J. N. Devault

Section 3. ION IMPLANTED Si AND Ge

*Laser Annealing ^of Ion-Implanted Semiconductors 245

A. V. Dvurechensky, ^{G. A.} Kachurin, ^{T. N.} Mustafin, L. S. Smirnov

*Ruby Laser Pulse Effects in Ion Implanted Semiconductors 2 59 E. Rimini, ^P. Baeri, S. U. Campisano, ^{G. Foti}

*Laser Annealing ^{of Ion} Implanted Silicon ^{2 7} 5

C. W. White, ^J. Narayan, ^{R. T.} Young

New Materials Properties Achievable by Ion Implantation 291 Doping and Laser Processing

B. R. Appleton, ^{B. C.} Larson, ^{C. W.} White,

J. Narayan, S. R. Wilson, ^{P. P. Pronko}

Effects of Ruby ^{Laser Pulses on} Virgin ^and Amorphous Silicon 299 Surface Layers

R. 0. Bell, ^{J. C.} Muller, ^M. Toulemonde, R. Stuck, ^{P. Siffert}

Channeling Study of the Formation of Arsenic Clusters in 305 Silicon

W. K. Chu, B. J. Masters

Redistribution and Enhanced Solubility ^of Transition ³¹¹ Metal Implants ^{in Silicon} Following ^Laser Irradiation

A. G. Cullis, ^{J. M.} Poate, G. K. Celler

Laser-Induced Regrowth ^of <100> Ge Implanted ^{with B and P Ions} 317 G. Delia Mea, ^G. Foti, ^G. Majni

Elemental and Dose Dependent ^{Threshold for Nd-YAG} Laser 321 Induced Recrystallization ^{of Silicon}

G. E. J. Eggermont, ^Y. Tamminga, ^{W. K. Hofker}

Annealing Behavior of Phosphorus Implanted Silicon 325 Irradiated by Several Lasers of Different Wavelength

M. Miyao, ^H. Tamura, K. Ohyu, ^T. Tokuyama

Laser Annealing ^of Hydrogen Implanted Amorphous ^{Silicon 331}

P. S. Peercy, ^{H. J. Stein}

Pulsed Laser Annealing ^{of Ion} Implanted Silicon 33 7

J. Stephen, ^{B. J.} Smith, ^{N. G.} Blamires

Laser Recrystallization ^of Ion-Implanted ^Si by Frequency- 344 Doubled Nd:YAG Laser

R. Tsu, J. E. Baglin, ^{T. Y.} Tan, M. Y. Tsai,

K. C. Park, R. Hodgson

Lattice Location ^of As and Sb Implanted in Silicon After 351 Annealing ^{with a Pulsed} Ruby ^Laser

S. R. Wilson, C. W. White, P. P. Pronko, R. T. Young, B. R. Appleton

Laser Annealing ^of Ion-Implanted Polysilicon ^Films 35 ⁷

C. P. Wu, ^{C- W.} Magee

Section 4. CW LASER IRRADIATION OF Si

*Annealing ^of Ion-Implanted ^Si Using ^{Scanned Laser and 365} Electron Beams

J. F. Gibbons, A. Gat, ^L. Gerzberg, ^A. Lietoila,

J. L. Regolini, ^{T. W.} Sigmon, ^{R. F. W.} Pease,

T. J. Magee, ^J. Peng, ^J. Hong, ^V. Deline, ^W. Katz,

P. Williams, ^{C. A.} Evans, Jr.

C02 ^Laser Annealing ^of Ion-Implanted Silicon 3g^

G. K. Celler, ^R. Borutta, ^{W. L.} Brown, J. M. Poate, G. A. Rozgonyi, ^{T. T.} Sheng

Comparison ^{of Laser} Annealing (Pulsed and Continuous) ^and 337 Furnace Annealing of Low-Solid Solubility, Pb-Implanted ^Si

B. M. Paine, J. S. Williams, M. W. Austin,

G. K. Celler

Recrystallization of ^5^s implanted Silicon by ^{a Free} 393 Running Ruby ^Laser

J. L. Regolini, ^{T. W.} Sigmon, ^{J. F.} Gibbons,

T. J. Magee, ^J. Peng

Channeling Analysis ^{of CW} Argon ^Laser Annealed, ^As -Implanted 399 Silicon

J. S. Williams, W. L. Brown, J. M. Poate Section 5. STRUCTURAL CHARACTERIZATION ^{OF Si}

Infrared and Raman Spectra ^{of Boron} Implanted, ^Laser 405 Annealed Silicon

H. Engstrom, ^{J. B.} Bates, ^{R. T.} Young, J. R. Noonan, ^{C. W. White}

Prevention of Dislocation Arrays ⁱⁿ Thermally Annealed, 4H High Dose, Phosphorus-Implanted ^Si by ^{Prior Laser} Annealing

C. A. Goodwin

Boundary ^{Effects in} Laser Annealing ^{Silicon Device} 419

Structures

C. Hill

The Removal of Implantation Damage ^{in Silicon} by ^Laser 42 5 Irradiation and its Thermal Stability

W. K. Hofker, ^{G. E. J.} Eggermont, ^Y. Tamminga

D. P. Oosthoek

Raman Spectroscopy of Pulsed-Laser Annealed Ion Implanted 42 9 Silicon

J. F. Morhange, ^G. Kanellis, ^M. Balkanski,

J. F. Peray, J. Icole, ^{M. Croset}

Ellipsometric Analysis of Laser-Annealed Si Layers 434

K. Nakamura, ^M. Kamoshida, ^A. Uehara,

R. Tatsumi

Effect of Thermal Annealing ^{in Boron} Implanted, ^Laser 440 Annealed Silicon

J. Narayan, ^{B. C. Larson, W. H. Christie}

Extent of Annealed or Melted Regions ^{as a Function of} 446 Energy of Pulsed Laser Irradiation

J. Narayan, ^{C. W. White}

Characterization of Laser Irradiated Silicon Using X-Ray 45 3 Topography

W. A. Porter, ^{D. L.} Parker, ^{T. W. Richardson}

The Microstructure of Laser Annealed Silicon 45 7 G. A. Rozgonyi, ^{H. J.} Leamy, T. T. Sheng,

G. K. Celler

Temperature Distribution ^and Microstructure ⁱⁿ Small-Diameter 463 Laser Beam Annealed Amorphous ^Silicon

T. Y. Tan, P. S. Ho, R. Tsu

Section 6. ELECTRON IRRADIATION OF Si

Pulsed Electron Beam Annealing ^{of Ion} Implanted ^Si Layers 479 E. F. Kennedy, ^{S. S.} Lau, ^I. Golecki, ^{J. W.} Mayer,

W. Tseng, ^{J. A.} Minnucci, ^{A. R.} Kirkpatrick

Processing of Semiconductor Materials by ^{Pulsed Electron Beams} 475 A. R. Kirkpatrick, ^{A. C.} Greenwald, ^{J. A.} Minnucci,

R. G. Little

Comparison of Effects ^of Pulsed Ruby ^{Laser and Pulsed Electron} 481

Beam Annealing of "7^As+ _{Implanted Silicon}

S. R. Wilson, ^{B. R.} Appleton, ^{C. W.} White,

J. Narayan

Section 7. DEPOSITED Si

Laser Induced Epitaxy ^of Amorphous Deposited Silicon J. C. Bean, H. J. Leamy, J. M. Poate,

G. A. Rozgonyi, ^{J. van der} Ziel, J. S. Williams, G. K. Celler

Laser Effects on Amorphous Silicon

M. Bertolotti, ^G. Vitali, ^{W. E.} Spear

Laser-Annealing Behavior of Deposited ^and Implant-Produced Amorphous ^Si Layers ^on Si Substrates

L. D. Hess, ^{J. A.} Roth, ^{C. L.} Anderson, ^{H. L.} Dunlap

A Comparison ^{of Laser} and Electron Beam Pulsed Annealing of Deposited Layers

S. S. Lau, W. F. Tseng, ^I. Golecki, ^{E. F.} Kennedy,

J. W. Mayer

Section 8. METAL-Si REACTIONS

Laser Annealing for Solid-Phase Thin-Film Reactions 509

Z. L. Liau, B. Y. Tsaur, J. W. Mayer

Aluminum Silicon Laser Alloying ^with Implications ^for 515

Mass Storage

H. G. Parks, ^{C. G.} Kirkpatrick

Detailed Characterization ^{of Metal} Semiconductor Alloys 521 Produced by Single Laser Pulses

H. G. Parks, ^{K. Rose}

Laser Induced Reactions of Metal Films with Silicon 52 7 J. M. Poate, H. J. Leamy, ^{T. T.} Sheng,

G. K. Celler

Crystallization ^of Amorphous Silicides by Energy ^Beam 533 Annealing

T. Y. Tan, R. Tsu, P. S. Ho, K. N. Tu

Laser-Induced Formation ^of Metal-Silicides 539

W. Wittmer, ^M. von Allmen

Section ^9. ELECTRICAL CHARACTERIZATION OF Si

489

492 496

503

Electrical Properties ^{of Laser Annealed Silicon}

J. L. Benton, L. C- Kimerling, ^{G. L.} Miller,

D. A. H. Robinson, ^{G. K. Celler}

543

Deep ^{Levels in} Ion-Implanted, CW Laser-Annealed Silicon 550 N. M. Johnson, ^{R. B.} Gold, ^A. Lietoila,

J. F. Gibbons

Charge Collection Microscopy ^{of Laser Annealed Silicon 556} H. J. Leamy, S. D. Ferris, ^G. L. Miller,

W. L. Brown, G. K. Celler

Electrical Characterization of Low-Dose Ion-Implanted 563 Silicon Annealed with Microsecond Laser Pulses

D. R. Myers, ^P. Roitman, ^S. Mayo

Electrical Properties ^and Annealing Kinetics Study ^of 56 9

Laser-Annealed Ion-Implanted ^Silicon

K. L. Wang, ^{Y. S.} Liu, ^{C. G.} Kirkpatrick, G. E. Possin

Transmission Electron Microscopy and Electrical Properties ^{5 79} Measurements of Laser Doped Silicon and GaAs

R. T. Young, ^J. Narayan, ^{R. D.} Westbrook,

R. F. Wood

Section 10. GaAs

Part a

Implanted

Laser-Annealed Si and Se Implants ^{for GaAs} Microwave Devices ⁵ 85 C. L. Anderson, ^{H. L.} Dunlap, ^{L. D.} Hess,

K. V. Vaidyanathan

Laser-Annealing ^{of Te Ion} Implanted ^GaAs 591

K. Gamo, F. Katano, ^Y. Yuba, ^K. Murakami, S. Namba

Laser Annealing ^of Ion-Implanted ^{GaAs 59 7}

Q. Kim, ^{Y. S.} Park, R. S. Mason, T. E. Luke, R. L. Hengehold, ^{Y. K. Yeo}

Annealing ^of Ion-Implanted GaAs with Nd:Glass Laser 60 3

S. G. Liu, ^{C. P. Wu, C. W.} Magee

Laser Annealing ^{of Ion} Implanted ^GaAs ^10

B. J. Sealy, ^{M. H.} Badawi, ^{S. S.} Kular,

K. G. Stephens

Pulsed Annealing ^of Implanted Semi-Insulating GaAs 616

J. L. Tandon, ^{F. H. Eisen}

Laser Induced Damage ^and Recrystallization ^of Ion-Implanted 523 GaAs by Frequency-Doubled ^{Nd:YAG Laser}

R. Tsu, J. E. Baglin, ^{G. J.} Lasher, ^{J. C.} Tsang

Study ^{of Surface} Crystallinity ^and Stoichiometry ^{of Laser} 629 Annealed GaAs Using Time Resolved Reflectivity ^and

Channeling

T. N. C. Venkatesan, D. H. Auston, J. A.

Golovchenko, C. M. Surko

Part b. Ohmic Contacts

Laser Alloying of Au-Ge Ohmic Contacts on GaAs 635 R. B. Gold, ^{R. A.} Powell, ^{J. F.} Gibbons

Laser-Annealed Ohmic Contacts for GaAs Microwave Devices 541 G. Eckhardt, ^{C. L.} Anderson, ^{L. D.} Hess,

C. F. Krumm

Ohmic Contacts Produced by Laser-Annealing Te-Implanted ⁶⁴⁷ GaAs

P. A. Barnes, ^{H. J.} Leamy, ^{J. M.} Poate,

S. D. Ferris, ^{J. S.} Williams, ^{G. K. Celler} Section 11. CdSe, ^{InP AND} Si3N4

Laser Annealing ^of Ion-Implanted Indium Phosphide 653

A. G. Cullis, ^{H. C.} Webber, ^{D. S. Robertson}

Laser Synthesis of Silicon ^{Nitride Powders} 6 59 S. C. Danforth, ^{J. H.} Flint, ^{W. R. Cannon,}

J. S. Haggerty

Laser Annealing ^of CdSe ^{Thin Films} 665

R. M. Feenstra, ^{R. R. Parsons, F. R.} Shepherd, W. D. Westwood, ^{S. J.} Ingrey

Section 12. BIBLIOGRAPHY

Bibliography ^{of Laser} Annealing B. A. Stevens

671