VLSI Design
A Course onDesign of Digital VLSI Systems & Circuits
By Pragnan ChakravortyAssociate Professor & H O D (E&TC) CIET Raipur Associate Professor & H.O.D (E&TC),CIET, Raipur
M.Tech (IIT Kharagpur), MIEEE Member IEEE(USA) :‐ Communication. Soc,
Microwave Theory and Techniques Soc, Antenna & Wave Propagation. Soc Antenna & Wave Propagation. Soc
How is a VLSI Circuit Different?
Unlike conventional electronic circuits, Transistors in a VLSI/ Integrated Circuits are
carved / sculpted over a single‐wafer (Monolith) of semiconductor almost
carved / sculpted, over a single‐wafer (Monolith) of semiconductor, almost
concatenated so as to reduce the lengths of interconnects. The interconnects are
made as the final layer of fabrication known as metallization layer. Metallizations are
now done using polysilicon. The ability to manipulate the area/volume occupied by
now done using polysilicon. The ability to manipulate the area/volume occupied by
the carved transistors and the interconnects between them renders a tremendous
scope of device miniaturization /scaling and a very large scale integration over a
small space.
SSI, MSI, LSI,VLSI,ULSI:
There has been a tremendous rise in the number of devices integrated into a single chip (conventionally 10mm x 10mm area chip) in the past few decades as a result the scale of device integration has been categorized as follows:
Device Integration Table:
S.No Category Year Number of
D i Devices
1 Small Scale Integration (SSI) 1964 05 ‐to‐ 20 2 Medium Scale Integration (MSI) 1967 20 ‐to‐ 200 3 Large Scale Integration (LSI) 1972 200 ‐to‐ 2000 4 Very Large Scale Integration (VLSI) 1978 2000 ‐to‐ 20000 5 Ultra Large Scale Integration (ULSI) 1989 20000 ‐to‐ ?
Moor’s Law:
In 1965, a Caltech Professor, Gordon Moore observed that plotting the number of transistors that can be most economically manufactured on a chip gives a straight line on a semi that can be most economically manufactured on a chip gives a straight line on a semi logarithmic scale. At the time, he found transistor count doubling every 18 months. This observation has been called Moore’s Law and has become a self‐fulfilling prophecy
Moor’s graph compared with actuality
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Advantages of High Scale Integration/Device Miniaturization:
The most important message here is that the logic complexity per chip has been
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(and still is) increasing exponentially. The monolithic integration of a large number
of functions on a single chip usually provides:
Less area/volume and therefore, compactness
Less power consumption
Less testing requirements at system level
Higher reliability mainly due to improved on chip interconnects
Higher reliability, mainly due to improved on‐chip interconnects
Higher speed, due to significantly reduced interconnection length
Significant cost savings due to batch processing
VLSI Design Flow
A VLSI system is a multi domain system where designs need to be carried out from
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behavioral levels to physical layout levels. With in each domain the design can be
categorized into certain levels of abstraction and then the designs need to follow
certain hierarchically categorized steps.
Domains of Design:
Domains are different distinct categories over which any
engineering system spans. There can be three such major domains stated below:
Behavioral domain: Which describes the behavior of the system for example the
transmitting behavior of a transmitter system.
Structural domain: Which describes the structure of the system for example where
and how are the various amplifiers ,oscillators, filters etc are structured in the
transmitter system.
Geometrical layout domain. Describe the physical layout or placement of different
components or devices in a system for example the placement and connections
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The Y Chart
The Y‐chart (first introduced by D. Gajski) shown in Fig. illustrates a design flow for
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most logic chips, using design activities on three different axes (domains) which
resemble the letter Y.
Levels of Abstraction
Domains can further be hierarchically divided into different levels of design
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abstraction. Classically, these have included the following
for digital chips:
Architectural or functional level
Logic or Register Transfer Level (RTL)
Logic or Register Transfer Level (RTL)
Circuit level
The
relationship
between
The
relationship
between
description domains and levels of
abstraction is elegantly shown by
the Gajski‐Kuhn Y chart in Figure.
the Gajski Kuhn Y chart in Figure.
In this diagram, the three radial
lines represent the behavioral,
structural, and physical domains.
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The annular regions between
concentric circles show different
levels of abstraction.
Design Hierarchy
The levels of abstraction are generic divisions which can map designs of one domain
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into another. Domain specific divisions of the levels of abstractions are called
hierarchical divisions. The hierarchical design approach reduces the design
complexity by dividing the large system into several sub‐modules
Concepts of Regularity, Modularity and Locality
Though the design complexity reduces down with hierarchical sub‐modules, such
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sub module themselves must have some consonance and integrity with each other
so as to further simplify
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design process and make them effective. Such
consonance between the sub‐modules are brought in by the following concepts:
Regularity:
Regularity is the division of the hierarchy into a set of similar building
blocks (modules/sub‐modules). Regularity can exist at all levels of the design
hierarchy. At the circuit level, uniformly sized transistors can be used, while at the
hierarchy. At the circuit level, uniformly sized transistors can be used, while at the
gate level, a finite library of fixed‐height, variable‐length logic gates can be used
Modularity:
Modularity states that modules/sub‐modules have well‐defined
functions and interfaces. If modules/sub‐modules are “well‐formed,” the interaction
with other modules/sub‐modules can be well characterized.
Locality:
Locality is the localized composition of components with in a module/sub‐
module so that they do not interact with other modules/sub‐modules. Therefore
internals of a module/sub‐modules are unimportant to other modules/sub‐modules.
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VLSI Design Styles/Methods
The VLSI design styles or methods depend upon the target IC platform or standard.
Depending upon the IC standards the design style vary and have platform specific
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limitations and flexibility or advantages and disadvantages.
Complex Programmable Logic Device(CPLD)
CPLD is a single device with multiple simple programmable logic devices(SPLDs) such
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as Programmable Array Logic (PLA) or Generic Array Logic (GLA). PALs and GALs are
based on sum of products (SOP) architecture with a programmable AND array and a
fixed OR array
CPLD Block Diagram
PLA/GLA CKT View
Field Programmable Gate Array (FPGA) Design
A typical field programmable gate array (FPGA) chip consists of I/O buffers, an array
of configurable logic blocks (CLBs) and programmable interconnect structures The
of configurable logic blocks (CLBs), and programmable interconnect structures. The
programming of the interconnects is implemented by programming of RAM cells
whose output terminals are connected to the gates of MOS pass transistors. General
and detailed blocks of an FPGA are shown below.
and detailed blocks of an FPGA are shown below.
The LUT is a di i l digital memory that stores the truth table of the Boolean function. XILINX Model XC2000
Configurable Logic Block (CLB):
A simple CLB (model XC2000 from XILINX) is shown
above where it consists of four signal input terminals (A, B, C, D), a clock signal
terminal user‐programmable multiplexers an SR‐latch and a look‐up table (LUT)
terminal, user‐programmable multiplexers, an SR‐latch, and a look‐up table (LUT).
The LUT is a digital memory that stores the truth table of the Boolean function. It can
generate any function of up to four variables or any two functions of three variables
While the design implementation of the FPGA chip is done with user programming,
that of the gate array is done with metal mask design and processing. Gate array
Gate Array/ Sea of Gates Design
implementation requires a two‐step manufacturing process: The first phase, which is
based on generic (standard) masks, results in an array of uncommitted transistors on
each GA chip. These uncommitted chips can be stored for later customization, which
is completed by defining the metal interconnects between the transistors of the
array
Standard Cell Based Design
In this design style, all of the commonly used logic cells are developed, characterized,
and stored in a standard cell library. A typical library may contain a few hundred cells
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including inverters, NAND gates, NOR gates, complex AOI, OAI gates, D‐latches, and
flip‐flops. It is almost a full custom design but for the predesigned cells which can’t
be customized.
Full Custom Design
In full custom design the customization starts at transistor level itself. Therefore
different cells can be customized and optimized according to the various design
different cells can be customized and optimized according to the various design
specifications and constraints. Full custom designs are usually prevalent with analog
designs and not digital.
General Purpose IC & ASSP System Design
System level digital designs are often practically done by programming general
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purpose ICs. These general purpose ICs are programmed using high level languages
and are different from the ASICs described so far. These ICs include
various
microprocessors microcontrollers, MIPS , RISC and SISC processors. Application
Specific System Processors(ASSPs) are also a kind of dedicated general purpose
processors such as DSP processors which are programmed using high level
languages.
DESIGN & FABRICATION ASPECTS
of
Basic Steps of Fabrication Process
Each processing step requires that certain areas are defined on chip by appropriate masks. defined on chip by appropriate masks. Consequently, the integrated circuit may be viewed as a set of patterned layers of doped silicon, polysilicon, metal and insulating silicon dioxide. In
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general, a layer must be patterned before the next layer of material is applied on chip. The process used to transfer a pattern to a layer on the chip is called lithography/Photolithographyg p y/ g p y. Since each layer has its own distinct patterning requirements, the lithographic sequence must be repeated for every layer, using a different mask
Figure at the right shows simplified process sequence for fabrication of the n‐well CMOS integrated circuit with a single polysilicon layer, showing only major fabrication steps.
Set of Masks for Patterning
The cross‐section view is of an inverter
In a CMOS circuit fabrication, the
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hypothetical set of six masks: n‐ well, polysilicon, n+ diffusion, p+ diffusion, contacts, and metal. Masks specifyp y where the components will be manufactured on the chip. Figure shows a top view of the six masks.
Different Development Stages in CMOS Fabrication
Fabrication of NMOSFET & PMOSFET Fabrication of N Well Laying out interconnects and thick insulating oxides2D & 3D Representations of
NMOS & PMOS in CMOS Process
Layout Design Rules
The physical mask layout of any circuit to be manufactured using a particular process
must conform to a set of geometric constraints or rules, which are generally called
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layout design rules. These rules usually specify the minimum allowable line widths
for physical objects on‐chip such as metal and polysilicon interconnects or diffusion
areas, minimum feature dimensions, and minimum allowable separations between
two such features. The main objective of design rules is to achieve a high overall
yield and reliability while using the smallest possible silicon area, for any circuit to be
manufactured with a particular process.
The design rules are usually described in two ways :
•
Micron rules:
in which the layout constraints such as minimum feature sizes and
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Micron rules:
in which the layout constraints such as minimum feature sizes and
minimum allowable feature separations, are stated in terms of absolute dimensions
in micrometers, or,
•
Lambda rules:
These rules specify the layout constraints in terms of a single
parameter λ (which is generally half the channel length and equal to the thickness of
polysilicon layer) and, thus, allow linear, proportional scaling of all geometrical
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constraints. The design rules are usually given by Metal Oxide Silicon
Implementation Service (MOSIS‐ established in 1981).
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Stick Diagram
As layout is time‐consuming, designers need fast ways to plan cells and estimate
area before committing to a full layout. Stick diagrams are easy to draw because they
do not need to be drawn to scale It is easy to estimate the area of a layout from the
do not need to be drawn to scale. It is easy to estimate the area of a layout from the
corresponding stick diagram even though the diagram is not to scale. As an example
stick diagrams of an inverter and 3 I/P NAND gate are shown below
MOSIS Design Rule (Sample Set)
Rule number Description L‐Rule
R1 Minimum active area width 3 L R2 Mi i ti i 3 L R2 Minimum active area spacing 3 L R3 Minimum poly width 2 L R4 Minimum poly spacing 2 L R5 Minimum gate extension of poly over active 2 L R6 Mi i l ti d i 1 L R6 Minimum poly‐active edge spacing 1 L (poly outside active area) R7 Minimum poly‐active edge spacing 3 L (poly inside active area) R8 Mi i t l idth 3 L R8 Minimum metal width 3 L R9 Minimum metal spacing 3 L R10 Poly contact size 2 L R11 Minimum poly contact spacing 2 L
R12 Minim m pol contact to pol ed e spacin 1 L
R12 Minimum poly contact to poly edge spacing 1 L
R13 Minimum poly contact to metal edge spacing 1 L
R14 Minimum poly contact to active edge spacing 3 L
R15 Active contact size 2 L
R16 Minimum active contact spacing 2 L
R16 Minimum active contact spacing 2 L
(on the same active region)
R17 Minimum active contact to active edge spacing 1 L
R18 Minimum active contact to metal edge spacing 1 L
R19 Minimum active contact to poly edge spacing 3 L
R19 Minimum active contact to poly edge spacing 3 L
R20 Minimum active contact spacing 6 L
Illustration of some of the typical MOSIS layout design rules listed above
NMOS & PMOS Transistors as Switches( Binary Logic Generators)
NMOS Transistor PMOS Transistor
An NMOS transistor is built with a p‐type body and has regions of n‐type
An NMOS transistor is built with a p type body and has regions of n type
semiconductor adjacent to the gate called the source and drain. They are physically
equivalent and for now we will regard them as interchangeable. The body is typically
grounded. A PMOS transistor is just the opposite, consisting of p‐type source and
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drain regions with an n‐type body. In a CMOS technology with both flavors of
transistors, the substrate is either n‐type or p‐type. The other flavor of transistor
must be built in a special well in which dopant atoms have been added to form the
body of the opposite type.
Transistor in OFF state
Considering NMOS transistor, the body is generally grounded so the p–n junctions of
the source and drain to body are reverse‐biased. If the gate is also grounded, no
Transistor in ON state
current flows through the reverse‐biased junctions. Hence, we say the transistor is
OFF. Just the opposite happens with PMOS transistors.
When the gate voltage is raised, it creates an electric field that starts to attract free
electrons to the underside of the Si–SiO2 interface. If the voltage is raised enough,
the electrons outnumber the holes and a thin region under the gate called the
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channel is inverted to act as an n‐type semiconductor. Hence, a conducting path of
electron carriers is formed from source to drain and current can flow. We say the
transistor is ON. Similarly in case of PMOS the conditions are reversed
Layout Examples:
NOR2 GATE
NAND2 GATE
Circuit Diagram Layout Diagram
Full Adder
Calculation of Capacitances & Resistances
Capacitances and resistances are the most vital factors governing the performance
of a digital VLSI circuit Perhaps the most significant aspect of a digital circuit is its
of a digital VLSI circuit. Perhaps the most significant aspect of a digital circuit is its
speed of operation which can be determined through delay calculations. Resistances
and capacitances in an IC form ‘RC’ pairs and cause various delays in the signal flow.
Resistances and capacitances in ICs can be categorized into two:
Resistances and capacitances in ICs can be categorized into two:
Intrinsic RCs:
Those resistances and capacitances which occur inside the transistors
Extrinsic RCs:
The resistances and capacitances which occur outside the transistors.
i.e. those which are contributed from the interconnects.
Resistance & Capacitance Calculation through RC Delay Model
Effective resistance in transistors:
A unit NMOS transistor is defined to have effective resistance R. The size of the unit
transistor is arbitrary but conventionally refers to a transistor with minimum length
and minimum contacted diffusion width (i e 4/2λ) Alternatively it may refer to the
and minimum contacted diffusion width (i.e., 4/2λ). Alternatively, it may refer to the
width of the NMOS transistor in a minimum‐sized inverter in a standard cell library.
An NMOS transistor of k times unit width has resistance R/k because it delivers k
times as much current A unit PMOS transistor has greater resistance generally in
times as much current. A unit PMOS transistor has greater resistance, generally in
the range of 2R because of its lower mobility.
R is typically on the order of 10 k
Ω
for
a unit transistor.
Effective capacitance in transistors:
Each transistor also has gate and diffusion capacitance. We define C to be the gate capacitance of a unit transistor of either flavor. A transistor of k times unit width has capacitance kC Diffusion capacitance depends on the size of the source/drain region Using capacitance kC. Diffusion capacitance depends on the size of the source/drain region. Using the approximations we assume the contacted source or drain of a unit transistor to also have capacitance of about C. Wider transistors have proportionally greater diffusion capacitance. Increasing channel length increases gate capacitance proportionally but does not affect diffusion capacitance. Although capacitances have a nonlinear voltage dependence, we use a single average value. We roughly estimate C for a minimum length transistor to be 1 fF/micron of width. In a 65 nm process with a unit transistor being 0.1 micron wide C is thus about 0 1 fF
micron wide, C is thus about 0.1 fF.
Generalized model for MOSFET capacitances:
The capacitances associated with a MOSFET are shown in Fig as lumped elements between the device terminals. Based on their physical origins, the device capacitances can be classified into two major groups: (1) oxide related capacitances and (2) junction classified into two major groups: (1) oxide‐related capacitances and (2) junction capacitances. The gate‐oxide‐related capacitances are Cgd (gate‐to‐drain capacitance), Cgs (gate‐to‐source capacitance), and Cgb (gate‐to‐substrate capacitance). Notice that in reality, the gate‐to‐channel capacitance is distributed and voltage dependent. Consequently, all of the oxide‐related capacitances described here change with the bias conditions of the transistor.
Effective resistance in interconnects:
The resistance of a metal or polysilicon line also have a profound influence on the signal propagation delay over that line. The resistance of a line depends on the type of material used (polysilicon aluminum gold ) the dimensions of the line and finally the number and (polysilicon, aluminum, gold, ...), the dimensions of the line and finally, the number and locations of the contacts on that line. Consider the interconnection line shown in Fig. The total resistance in the indicated current direction can be found as
Where ρ represents the characteristic resistivity of the interconnect material, and Rsheet represents the sheet resistivity of the line, in (ohm/square). For a typical polysilicon layer, the sheet resistivity is between 20‐40 ohm/square, whereas the sheet resistivity of silicide is about 2 4 ohm/square Using the formula given above we can estimate the total parasitic resistance 2‐ 4 ohm/square. Using the formula given above, we can estimate the total parasitic resistance of a wire segment based on its geometry. Typical metal‐poly and metal‐diffusion contact resistance values are between 20‐30 ohms, while typical via resistance is about 0.3 ohms.
Effective capacitance in interconnects:
A set of simple formulas developed by Yuan and Trick in the early 1980’s can be used to estimate the capacitance of the interconnect structures in which fringing fields complicate the effective capacitance calculation The following two cases are considered for two different effective capacitance calculation. The following two cases are considered for two different ranges of line width (w).
These formulas permit the accurate approximation of the parasitic capacitance values to These formulas permit the accurate approximation of the parasitic capacitance values to within 10% error, even for very small values of (t/h).
Power Dissipation
Static CMOS gates are very power‐efficient because they dissipate nearly zero power while idle. For much of the history of CMOS design, power was a secondary consideration behind speed and area for many chips. As transistor counts and clock frequencies have increased, power consumption has skyrocketed and now is a primary design constraint We begin by reviewing consumption has skyrocketed and now is a primary design constraint. We begin by reviewing some definitions. The instantaneous power P(t) drawn from the power supply is proportional to the supply current iDD(t) and the supply voltage VDD
Static Power Dissipation
Considering the static CMOS inverter shown in Figure 4 26 if the input = '0 ' the associated Considering the static CMOS inverter shown in Figure 4.26, if the input = 0, the associated nMOS transistor is OFF and the pMOS transistor is ON. The output voltage is VDD or logic '1.'When the input = '1,' the associated nMOS transistor is ON and the pMOS transistor is OFF. The output voltage is 0 volts (GND). Note that one of the transistors is always OFF when the gate is in either of these logic states. Ideally, no current flows through the OFF transistor so the power dissipation is zero when the circuit is quiescent, i.e., when no transistors are switching. Zero quiescent power dissipation is a principle advantage of CMOS over competing transistor technologies. However, secondary effects including sub threshold conduction, tunneling, and technologies. However, secondary effects including sub threshold conduction, tunneling, and leakage lead to small amounts of static current flowing through the OFF transistor. Assuming the leakage current is constant so instantaneous and average power are the same, the static power dissipation is the evaluation product of total leakage current and the supply voltage.
Combinational & Sequential Logic Design
With VHDL
What is VHDL?
VHDL is an acronym for VHSlC Hardware Description Language (VHSIC is an acronym for Very High Speed Integrated Circuits) It is a hardware description language that can be Very High Speed Integrated Circuits). It is a hardware description language that can be used to model a digital system at many levels of abstraction ranging from the algorithmic level to the gate level. The complexity of the digital system being modeled could vary from that of a simple gate to a complete digital electronic system, or anything in between. The digital system can also be described hierarchically. Timing can also be explicitly modeled in the same description.
The VHDL language can be regarded as an integrated amalgamation of the following languages: languages: sequential language + concurrent language + net‐list language + timing specifications +
waveform generation language => VHDL
Therefore, the language has constructs that enable you to express the concurrent or sequential behavior of a digital system with or without timing. It also allows you to model the system as an interconnection of components. Test waveforms can also be generated
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using the same constructs. All the above constructs may be combined to provide a comprehensive description of the system in a single model
Use of VHDL in digital logic design
VHDL is used to describe a model for a digital hardware device. This model specifies the external view of the device and one or more internal views. The internal view of the device specifies the functionality or structure while the external view specifies the interface of the specifies the functionality or structure, while the external view specifies the interface of the device through which it communicates with the other models in its environment. The Figure drawn below shows the hardware device and the corresponding software model.
What is an entity? What is an entity?
Entity is an abstraction level of the hardware device in cosideration. The device to device model mapping is strictly a one to many. That is, a hardware device may have many device models. For example, a device modeled at a higher level of abstraction may not have a clock as one of its inputs, since the clock may not have been used in the description. Also the data transfer at the interface may be treated in terms of say, integer values, instead of logical values. In VHDL, each device model is treated as a distinct representation of a unique device, called an entity .
Basic Terminologies
The digital system can be as simple as a logic gate or as complex as a complete electronic system. A hardware abstraction of this digital system is called an entity. An entity X, when used system. A hardware abstraction of this digital system is called an entity. An entity X, when used in another entity Y, becomes a component for the entity Y. Therefore, a component is also an entity, depending on the level at which you are trying to model.
To describe an entity, VHDL provides five different types of primary constructs, called design
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units. They are
1. Entity declaration 2. Architecture bodyy
3. Configuration declaration 4. Package declaration
5. Package body
An entity is modeled using an entity declaration and at least one architecture body. The entity declaration describes the external view of the entity, for example, the input and output signal names. The architecture body contains the internal description of the entity, for example, as a set of interconnected components that represents the structure of the entity, or as a set of concurrent or sequential statements that represents the behavior of the entity. Each style of representation can be specified in a different architecture body or mixed within a single architecture body Figure given below shows an entity and its model
A configuration declaration is used to create a configuration for an entity It specifies the A configuration declaration is used to create a configuration for an entity. It specifies the binding of one architecture body from the many architecture bodies that may be associated with the entity. It may also specify the bindings of components used in the selected architecture body to other entities. An entity may have any number of different configurations.
A package declaration encapsulates a set of related declarations such as type declarations, subtype declarations, and subprogram declarations that can be shared across two or more design units. A package body contains the definitions of subprograms declared in a package design units. A package body contains the definitions of subprograms declared in a package declaration.
Once an entity has been modeled, it needs to be validated by a VHDL system. A typical VHDL system consists of an analyzer and a simulator. The analyzer reads in one or more design units contained in a single file and compiles them into a design library after validating the syntax and performing some static semantic checks The design library is a place in the host and performing some static semantic checks. The design library is a place in the host environment (that is, the environment that supports the VHDL system) where compiled design units are stored.
The simulator simulates an entity, represented by an entity‐architecture pair or by a configuration, by reading in its compiled description from the design library and then performing the following steps:
1. Elaboration 2 Initialization 2. Initialization 3. Simulation
EXAMPLES
Entity Declaration: The entity declaration specifies the name of the entity being modeled and lists the set of interface ports. Ports are signals through which the entity communicates with the other models in its external environment.
Here is an example of an entity declaration for the half‐adder circuit shown in Fig above entity HALF ADDER is y _
port (A, B: in BIT; SUM, CARRY: out BIT); end HALF_ADDER;
‐‐ This is a comment line.
The entity, called HALF_ADDER, has two input ports, A and B (the mode in specifies input port), and two output ports, SUM and CARRY (the mode out specifies output port). BIT is a predefined type of the language; it is an enumeration type containing the character literals '0' and '1'. The port types for this entity have been specified to be of type BIT, which means that the ports can take the values, '0' or '1'.
Architecture Body: The entity declaration specifies the name of the entity being modeled and lists the set of interface ports. Ports are signals through which the entity communicates with the other models in its external environment.
architecture HA_Archbody of HALF_ADDER is begin
SUM <= A xor B after 8 ns; CARRY <= A and B after 4 ns; end HA_Archbody;
Here a dataflow model is used where the HALF_ADDER is described using two concurrent signal assignment. In a signal assignment statement, the symbol <= implies an assignment of a value to a signal. The value of the expression on the right‐hand‐side of the statement is computed and is assigned to the signal on the left hand side called the target signal A computed and is assigned to the signal on the left‐hand‐side, called the target signal. A concurrent signal assignment statement is executed only when any signal used in the expression on the right‐hand‐side has an event on it, that is, the value for the signal changes. Configuration Declaration is used to select one of the possibly many architecture bodies that an entity may have, and to bind components, used to represent structure in that architecture body, to entities represented by an entity‐architecture pair or by a configuration, that reside in a design library Consider the following configuration declaration for the HALF ADDER entity a design library. Consider the following configuration declaration for the HALF_ADDER entity.
The first statement is a library context clause that makes the library names CMOS_LIB and MY_LIB visible within the configuration declaration. The name of the configuration is HA BINDING and it specifies a configuration for the HALF ADDER entity The next statement HA_BINDING, and it specifies a configuration for the HALF_ADDER entity. The next statement specifies that the architecture body HA_STRUCTURE is selected for this configuration. Since this architecture body contains two component instantiations, two component bindings are required.
The first statement (for X1: . . . end for) binds the component instantiation, with label X1, to an entity represented by the entity‐architecture pair, XOR_GATE entity declaration and the DATAFLOW architecture body, that resides in the CMOS_LIB design library. Similarly, component instantiation A1 is bound to a configuration of an entity defined by the configuration declaration, with name AND_CONFIG, residing in the MY_LIB design library.
Package Declaration: A package declaration is used to store a set of common declarations like Package Declaration: A package declaration is used to store a set of common declarations like components, types, procedures, and functions. These declarations can then be imported into other design units using a context clause. Here is an example of a package declaration.
The name of the package declared is EXAMPLE_PACK. It contains type, component, constant, and function declarations. Notice that the behavior of the function INT2BIT_VEC does not appear in the package declaration; only the function interface appears The definition or body appear in the package declaration; only the function interface appears. The definition or body of the function appears in a package body
Package Body: A package body is primarily used to store the definitions of functions and procedures that were declared in the corresponding package declaration, and also the complete constant declarations for any deferred constants that appear in the packagep y pp p g declaration. Therefore, a package body is always associated with a package declaration; furthermore, a package declaration can have at most one package body associated with it
MODELING STYLES
The architectural body which determines the internal characteristics of an entity can be modeled using different modeling styles as described below
1. As a set of interconnected components (to represent structural style),
2. As a set of concurrent assignment statements (to represent dataflow style), 3. As a set of sequential assignment statements (to represent f q g ( p behavioral styley ), ), 4. Any combination of the above three.
Structural Style of Modeling
In the structural style of modeling, an entity is described as a set of interconnected components. Such a model for the HALF ADDER as discussed before, is described in anp _ , architecture body as shown below.
The name of the architecture body is HA_STRUCTURE. The entity declaration for HALF_ADDER (presented in the previous section) specifies the interface ports for this architecture body. The architecture body is composed of two parts: the declarative part (before the keyword begin) and the statement part (after the keyword begin). Two component declarations are present in and the statement part (after the keyword begin). Two component declarations are present in the declarative part of the architecture body. These declarations specify the interface of components that are used in the architecture body. The components XOR2 and AND2 may either be predefined components in a library, or if they do not exist, they may later be bound
h i lib h d l d i i d i h
to other components in a library. The declared components are instantiated in the statement part of the architecture body using component instantiation statements. X1 and A1 are the component labels for these component instantiations.
The first component instantiation statement, labeled XI, shows that signals A and B (the input ports of the HALF_ADDER), are connected to the X and Y input ports of a XOR2 component, while output port Z of this component is connected to output port SUM of the HALF_ADDER entity Similarly in the second component instantiation statement signals A and B are entity. Similarly, in the second component instantiation statement, signals A and B are connected to ports L and M of the AND2 component, while port N is connected to the CARRY port of the HALF_ADDER.
Dataflow Style of Modeling
In this modeling style, the flow of data through the entity is expressed primarily using concurrent signal assignment statements. The structure of the entity is not explicitly specified in this modeling style but it can be implicitly deduced Consider the following alternate in this modeling style, but it can be implicitly deduced. Consider the following alternate architecture body for the HALF..ADDER entity that uses this style.
The dataflow model for the HALF_ADDER is described using two concurrent signal assignment
t t t ( ti l i l i t t t t d ib d i th t ti ) I
statements (sequential signal assignment statements are described in the next section). In a signal assignment statement, the symbol <= implies an assignment of a value to a signal. The value of the expression on the right‐hand‐side of the statement is computed and is assigned to the signal on the left‐hand‐side, called the target signal. A concurrent signal assignment statement is executed only when any signal used in the expression on the right‐hand‐side has an event on it, that is, the value for the signal changes. Delay information is included in the signal assignment statements using after clauses.
Behavioral Style of Modeling
In contrast to the styles of modeling described earlier, the behavioral style of modelingy g , y g specifies the behavior of an entity as a set of statements that are executed sequentially in the specified order. This set of sequential statements, that are specified inside a process statement, do not explicitly specify the structure of the entity but merely specifies its f nctionalit A process statement is a conc rrent statement that can appear ithin an functionality. A process statement is a concurrent statement that can appear within an architecture body. For example, consider the following behavioral model for the DECODER2x4 entity.
Basic language Elements
These include data objects that store values of a given type, literals that represent constant values and operators that operate on data objects Every data object belongs to a specific values, and operators that operate on data objects. Every data object belongs to a specific type.
Data Types
Data types categorically divides different forms of data to be associated with data objects. Subtypesare data types with constraints These constraints may specify a range of values
Subtypesare data types with constraints. These constraints may specify a range of values.
Operators
Operators are mathematical or logical functions which give action to data objects or relate two or more data objects
Logical Operators
Adding Operators