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Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

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Academic year: 2020

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Figure

Fig. 1.  (a) XRD pattern of a ZnO thin film deposited on a Pt/Ti/SiO2/Si substrate. (b) The cross-section
Fig. 2. Typical IV characteristics of Al/ZnO/Pt device. The inset shows the schematic structure for
Fig. 3. Typical I–V curves of Al/ZnO/Pt device plotted in double logarithmic scale in negative (a) and
Fig. 4. (a) Endurance test for 50 consecutive Reset-Set cycles, readout at 0.1 V. (b) Retention tests of

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