AlxGa1-xN
Theoretical Study on the Optical and Electrical Properties of AlxGa1 xN Crystals
... Conclusion The photoelectric characteristics of the intrinsic supercell GaN crystal and the substitutional supersell AlxGa1−xN models with the different components of x have been calcula[r] ...
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Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
... / Journal of Crystal Growth 350 2012 80–84 The fact that uniform free-standing ternary zinc-blende and wurtzite AlxGa1 xN wafers with a thickness up to 10 mm can be grown by MBE is very[r] ...
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Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition
... Temperaturedependent photoluminescence and room temperature cathodoluminescence measurements have been performed on high quality semi-polar 11-22 AlxGa1-xN alloys with high Al compositio[r] ...
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Molecular beam epitaxy as a growth technique for achieving free standing zinc blende GaN and wurtzite AlxGa1 xN
... In this review we have discussed the growth of free-standing zincblende cubic and wurtzite hexagonal GaN and AlxGa1-xN layers by plasma assisted molecular beam epitaxy PA-MBE.. We have p[r] ...
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High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3
... The carbon concentration, aluminum composition, the crystal structure, the depth profile, and the conduction of AlGaN samples were examined by SIMS, the cathode lu[r] ...
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Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56
... www.nature.com/scientificreports/ Figure 6. a Integrated CL intensity image of the shorter wavelength emission 285–300 nm and b Electron channelling contrast image on the same scale but [r] ...
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Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries
... The CL maps revealed a blueshift of the NBE energy inside the grain, which increases as the grain size decreases, compared to that near the boundaries.. The FWHM inside the grain confirm[r] ...
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Ultraviolet Detectors and Focal Plane Array Imagers Based on AlxGa1-xN P-I-N Photodiodes
... A selection of UV images obtained using an improved 320x256 visible-blind nitride focal plane array are shown in Figures [19-23].. In Figure [19], a visible image of a standard televis[r] ...
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Large-Signal and Noise Properties of Heterojunction DDR IMPATTs Based on AlxGa1-xN~GaN Material System at 1.0 THz
... Variations of (a) RF power output and (b) DC to RF conversion efficiency of different homojunction and heterojunction DDR IMPATTs with bias current density for 60% voltage modulation.[r] ...
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High performance of cubic AlxGa1 xN/GaN Double Gate MOS HEMTs
... Following by the description of the device structures in Section 2, we will discuss the devices simulation results and comparison study of a symmetrical underlap DG MOSFET devices, cubic[r] ...
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Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation
... For Ti/Al/Ni/Au Ohmic contact formation to high Al content barrier layers, fissures were found to offer conduction routes to the 2DEG that allow for low resistance contacts, with fissure[r] ...
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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers
... Epi-structure designed for our GaN high electron mobility transistors HEMTs with two graded Alx Ga1−x N strain-compensation transitional layers grown on 111 silicon.. Results and Discuss[r] ...
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Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... Intersubband absorption properties of high Al content AlxGa1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition He Hui Sun1*, Feng [r] ...
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A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode
... Abstract In this study, separate absorption, grading, charge, and multiplication SAGCM avalanche photodiode APD with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were[r] ...
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High resolution X-ray Diffraction Characterization of III-Nitride Semiconductors: Bulk Crystals and Thin Films.
... The strain state and composition of AlxGa1-xN alloy epitaxial films deposited on (0001) AlN single crystals by MOCVD was studied using several HRXRD methods, incl[r] ...
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High Mg effective incorporation in Al rich Alx Ga1 xN by periodic repetition of ultimate V/III ratio conditions
... Two Mg-doped AlxGa1 – xN x = 0.33, 0.54 films were grown by MOVPE using the conventional method the inset of Figure 1c to validate the prediction of the surface effect on Mg incorporatio[r] ...
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(n,xn γ) reaction cross section measurements for (n,xn) reaction studies
... Precise knowledge of (n,xn γ ) reactions is a key issue in present day reactor development studies. Indeed the new Generation IV nuclear reactors explore new energy domains, and imply reaction rates unknown or ...
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On the Rational Recursive Sequence xn+1=(α−βxn)/(γ−δxn−xn−k)
... We show that the positive equilibrium of this equation is a global attractor with a basin that depends on certain conditions posed on the coefficients of this equation.. Zayed et al.[r] ...
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Stability of N-extremal measures
... Note that the support {xn : n ∈ N} of an indeterminate N-extremal measure is the zero set of an entire function of minimal exponential type and therefore |xn |∞ n=1 grows at least linear[r] ...
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Avalanche multiplication in AlxGa1-xAs (x=0to0.60)
... Increasing the alloy fraction causes the multiplication curves to be shifted to higher voltages such that the multiplication curves at any given thickness are practically parallel The ra[r] ...
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