DC magnetron sputtered films
Studies on Structural And Optical Properties of DC Reactive Magnetron Sputtered Zro 2Thin Films
... thin films such as tantalum oxide, titanium oxide, hafnium oxide, aluminum oxide and zirconium oxide have been examined to replace silicon dioxide as gate dielectric layer in MOS devices ...
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Annealing Effect on the Physical Properties of dc Reactive Magnetron Sputtered Nickel Oxide Thin Films
... thin films have been deposited by dc reactive magnetron sputtering technique on unheated substrates and subsequently annealed from 473 to 673 ...annealed films were polycrystalline with ...
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Physical properties of nitrogen doped titanium dioxide thin films prepared by dc magnetron sputtering
... its good adherent to substrate, no direct heating, reproducibility, uniformity over large surface area, and easy to control the process parameters. In this study, we investigated the effect of nitrogen partial pressures ...
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A comparative study of laser induced breakdown spectroscopy and secondary ion mass spectrometry applied to dc magnetron sputtered as grown copper indium diselenide
... standard dc magnetron sputtering of copper indium/gallium diselenide from elemental sources, but these systems have been complex in their nature and the produced films required post deposition ...
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Preparation of Thin Films by a Bipolar Pulsed DC Magnetron Sputtering System Using Ca3Co4O9 and CaMnO3 Targets
... prepared from powder precursors, which obtained by a solid state reaction. Optical emissions from plasmas during sputter depositions of films were detected using a high resolution spectrometer. Thickness of thin ...
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Magnetron Sputtering of Gadolinium-doped Ceria Electrolyte for Intermediate Temperature Solid Oxide Fuel Cells
... mm. Magnetron was connected to APEL-M-5PDC or APEL-M-HIPIMS power supply (Applied Electronics, ...GDC films were obtained in the transition mode of ...stoichiometric films are ...of sputtered ...
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Suppression of the metal insulator transition in magnetron sputtered Ti2O3 films
... atmosphere. Reactive sputtering rate was monitored in-situ using an Inficon quartz crystal monitor. This allowed for estimation of the sample thickness and also ensured that deposition conditions were consistent. All ...
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Total Pressure and Annealing Temperature Effects on Structure and Photo Induce Hydrophilicity of Reactive DC Sputtered TiO<sub>2</sub> Thin Films
... magnetron sputtering system. The crystal structure, surface morphology and photo-induce hydrophilicity were depended strongly on values of the total pressure and annealing temperature. The XRD results show that ...
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SPUTTERING POWER DEPENDENCE PHYSICAL PROPERTIES OF NANOCRYSTALLINE DC MAGNETRON SPUTTERED SnO2 THIN FILMS
... The average grain size of films was calculated by using Scherre’s relation [18]. Grain size of the films was increased from 4.6 nm to 6.1 nm with increase of sputtering power from 20 W to 40 W and ...
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Effect of Sputtering Process Parameters on the Magnetron Sputtered Ni Ti Cu thin Films
... Ni-Ti-Cu films were successfully deposited and characterized by various modern ...thin films was dependent on the DC power of pure copper, nickel target and the RF power of the titanium .... ...
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← Return to Article Details MOLYBDENUM TRIOXIDE THIN FILMS DOPED WITH GOLD NANOPARTICLES GROWN BY A SEQUENTIAL METHODOLOGY: PHOTOCHEMICAL METAL-ORGANIC DEPOSITION (PMOD) AND DC-MAGNETRON SPUTTERING
... the films were studied by UV/ Vis Spectroscopy, Scanning Electron Microscopy (SEM), X-Ray Photoelectron Spectroscopy (XPS), and X-Ray Diffraction ...3 films on Si(100) showed the presence of Mo(VI) and ...
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Electrical Characteristics of Doped ZnO/Cu2O Heterojunction Diode by Sputtering Method
... thin films, which formed by using the combination of several oxide semiconductors have attracted much attention due to its wide range of functional properties and wide range of potential application in optical, ...
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Indium Tin Oxide Films with Low Resistivity at Room Temperature Using DC Magnetron Sputtering with Grid Electrode
... by a DC magnetron sputtering with a grid electrode at room temperature. A negative grid voltage was found to be very effective in suppressing the diffusion of the glow discharge to the side of the ...
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Single step deposition method for nearly stoichiometric CuInSe2 thin films
... where hkl are Miller indices , d is the inter-planar spacing The inter-planar spacing d and the Miller indices can be determined from the diffractogram. In order to determine the a and c values, at least two reflections ...
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Study of Iridium (Ir) Thin Films Deposited on to SiO2 Substrates
... thin films can be somewhat different than those of bulk ...metal films were deposited in an inert Ar gas atmosphere, at relatively low operating pressures, without heating the substrates ...resulting ...
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Apatite Formation on Rutile TiO<sub>2</sub> Film Deposited Using Dual Cathode DC Unbalanced Magnetron Sputtering
... reactive gases respectively. The flow rates were separately controlled by mass flow controllers (MKS type 247D) with constant flow rates of 1.0 and 4.0 sccm. Before deposition, the chamber was evacuated to a base ...
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Cross sectional TEM analysis of duplex HIPIMS and DC magnetron sputtered Mo and W doped carbon coatings
... Abstract. A FIB lift-out sample was made from a wear-resistant carbon coating deposited by high power impulse magnetron sputtering (HIPIMS) with Mo and W. TEM analysis found columnar grains extending the whole ...
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Decorative vacuum coating technologies Certottica Longarone. Thin Film Plasma Coating Technologies
... High Plasma Impuls Magnetron Sputtering Deposition of tribological and hard coatings. Magnetron sputter plasma for the deposition of optical thin films[r] ...
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Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films
... Abstract —Boron (B) doped Aluminium Nitride (AlN) thin film ((B, Al)N) was synthesized by DC-RF coupled co-sputtering and post processed for three different annealing temperatures. The structural properties was ...
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Growth and Magnetic Characterization of High Manganese Silicide Thin Films
... In another widely studied class of DMSs, a 3d-transition metal is used to dope a III-V semiconductor. One existing theory for these III-V DMS is based on the indirect exchange between the local magnetic moments, for ...
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